TK42 Search Results

Contextual Info: TK42E12N1 MOSFETs Silicon N-channel MOS U-MOS-H TK42E12N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 7.8 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 120 V)

Contextual Info: TK42A12N1 MOSFET シリコンNチャネルMOS形 U-MOS-H TK42A12N1 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) オン抵抗が低い。: RDS(ON) = 7.8 mΩ (標準) (VGS = 10 V) (2) 漏れ電流が低い。: IDSS = 10 µA (最大) (VDS = 120 V)

elevator

Contextual Info: TK42E12N1 MOSFETs Silicon N-channel MOS U-MOS-H TK42E12N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 7.8 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 120 V)

Contextual Info: TK42E12N1 MOSFETs Silicon N-channel MOS U-MOS-H TK42E12N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 7.8 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 120 V)

Contextual Info: TK42A12N1 MOSFETs Silicon N-channel MOS U-MOS-H TK42A12N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 7.8 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 120 V)

Contextual Info: TK42E12N1 MOSFETs Silicon N-channel MOS U-MOS-H TK42E12N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 7.8 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 120 V)

Contextual Info: TK42E12N1 MOSFETs Silicon N-channel MOS U-MOS-H TK42E12N1 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 7.8 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 120 V)

TK42A12N1

Contextual Info: TK42A12N1 MOSFETs Silicon N-channel MOS U-MOS-H TK42A12N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 7.8 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 120 V)

Contextual Info: TK42A12N1 MOSFETs Silicon N-channel MOS U-MOS-H TK42A12N1 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 7.8 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 120 V)

fast tlp785

Abstract: TK10A60D 5252 F solar tcv7116 TPH1400ANH
Contextual Info: System Catalog 2012-12 Semiconductors for Power Supplies SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng –2 Power Supply Circuit Types and Their Applications Switching Power Supplies AC-DC Resonant Half-Bridge Power Supplies Up to around 800 W

ID78K0-NS

Abstract: U11537J
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

Magnetic

Contextual Info: Safety magnetic controller General table Designation Part number Operating data Division into safety category AC 230 V AC 24 V DC 24 V Safety category Safety category Safety category Safety category I II III IV Approval BIA-risk evaluated BE-risk-evaluated

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

TK41

Abstract: Toggle Switches
Contextual Info: Toggle Switches Sealed Sub-Miniature SPDT Toggle Switches UL version available by request 4.11 UL version available by request 0.51 3 2 1 EPOXY SEAL 8.13 0.51 3.30 5.08 Ø4.80 Ø2.54 1 2 3 4.18 3.30 0.51 0.40 4.65 5.08 0.76 13.54 Toggle Switches 6.10 EPOXY

2N25

Abstract: ge 142 2SB450 GET113 2SA244 AC139/AC142 2SB450A ASY82 SFT121 SFT142
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

Magnetic

Contextual Info: Safety magnetic controller Coded magnetic switches TÜV certificated System type 3 according to EN 954-1 in safety category 3 Single fault tolerance S to IEC 60947-5-3 Designation Part number Max. connectable sensor units safety output, N.O. Feedback circuit

Contextual Info: Technical Data Magnetic switches Switching magnet Type designation TK-42-CD/2 Item number 6402042053 active side Characteristic features Mechanical data Housing Magnet Ambient air temperature Application Assembly position PA6.6 black encapsulated magnets

Magnetic

Abstract: bernstein magnetic MAK12 630.2111.047
Contextual Info: Table of contents Magnetic switches – General features Electromechanical magnetic switches - Selection aid cylindrical and metric housing - Selection aid rectangular housing Page 195 Page 196 Page 198 Page 201 Electronical magnetic switches - Selection aid cylindrical and rectangular housings

2n189

Abstract: 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152
Contextual Info: INTERNATIONAL TRANSISTOR SUBSTITUTION GUIDEBOOK by KEATS A. PULLEN. Jr., Eng. D. Member of the Scientific Staff, Ballistic Research Laboratories, Aberdeen Proving G rounds Adjunct Professor of Electrical Engineering, Drexel Institute of Technology Author of: Conductance Design of Active Circuits

transistor 2N4

Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
Contextual Info: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200

NKT677

Abstract: NKT612 ORP12 sft353 GEX34 1/equivalent transistor ac127 OC171 equivalent AD149 NKT275 ac128
Contextual Info: CONTENTS p ag e Mazda Range of Audio Transistors 2 Recommended Line-ups for Audio Amplifiers 3 Key to Symbols 4 Do’s and Dont’s 6 Device Data 7 European Nomenclature 34 Device Identification 35 Comparables List 47 Replacing Selenium Rectifiers 62 Replacing Valve Rectifiers

ID78K4

Abstract: RX78K4 U10905J
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社