TIP56 Search Results

2N4004

Abstract: 2N3551 2N1936 2N4005 2N326S tip665 TIP540 TIP664 2N6128 2N6127
Contextual Info: Case Outlines TO-61 2-67 max TO-63 TO-111 4 25 Metal Can Power \ High Reliability Professional Types continued Device Type 2N3789 2N3713 2N3715 2N3791 TIP5433 2N5940 2N3790 2N3792 2N5939 2N6127 2N6128 2N3714 2N3716 2N4301 TIP562 TIP563 TIP663 TIP664 TIP665

30343

Abstract: TIP55A p6020 tip55 30343 power
Contextual Info: TEXAS INSTR -COPTO} b5 DE |flcit117Eb 003bfl3b 8 9 & 1 7 2 6 TEXAS INSTR COPTO 62C 36836 TIP55A, TIP56A, TIP57A, TIP58A N-P-N SILICON POWERJRANSISTORS T - ' . 5 3 ~ * l{ R EV ISED O CTOBER 1984 • Min V B R )C E O °f 2 50 V to 4 0 0 V • 50 W at 1 0 0 ° C C ase Temperature

diode 10a 400v

Abstract: diode 66a NPN Transistor 10A 400V 300V transistor npn 2a 563 j 400v NPN Transistor 1A 400V TIP562 TIP563 voltage regulators 300v dc
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors TIP562/563 DESCRIPTION • Collector-Emitter Sustaining Voltage: VCEO SUS = 300V(Min)- TIP562 = 400V(Min)- TIP563 ·High Power Dissipation APPLICATIONS ·Designed for converters, inverters, pulse-width-modulated

Contextual Info: File Number TIP562, TIP563 1212 Silicon N-P-N Switching Transistors For Switching Applications in Industrial and Commercial Equipment Features: • V c e o — 300 V and 400 ■ / c - 10 A ■ PT — 100 W V TERM INAL DESIGNATIONS T h e T IP 5 6 2 an d T IP 5 6 3 silico n n -p -n p o w e r tran sis­

Contextual Info: Nie Number 1212 HARRIS SEMICOND SECTOR TIP562, TIP563 T> m SbE 43D2271 OGMO'ìbM 2ST I Silicon N-P-N Switching Transistors HAS 7 ^ 3 SV<? For Switching Applications in Industrial and Commercial Equipment Feature«: • Veto — 300 V and 400 V ■ lc — 10 A

BT33b

Abstract: t33b TIP562 TIP563
Contextual Info: 3875081 G E S O L I D STATE ~ ^ DËT| 3 fl7 5 0 ö l 0D1715D 1 |~~ High-Speed Power TIP562, TIP563 File Number 1212 Silicon N-P-N Switching Transistors For Switching Applications in Industrial and Commercial

Contextual Info: , Una, TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TIP55A, TIP56A, TIP57A, TIP58A N-P-N SILICON POWEBJRANSISTORS Min V(BR)CEO of25° v to 400 V 50 W at 100° C Case Temperature 10 A Peak Collector Current

TIP55A

Abstract: TIP58A d03b TIP55 TIP142 40960 rca TIP56A TIP57A TIP56 TIP5
Contextual Info: TEXAS INSTR -COPTO* 89^1726 TEXAS "b5 INSTR DE 00 3 ^5 3 ^ COPTO 62C 36836 TIP55A, TIP56A, TIP57A, TIP58A N-P-N SILICON POWERJRANSISTORS 3 3 ~ * l R EV ISED O CTO BE R 1 9 8 4 Min V(BR)CEO 2 5 0 v to 4 0 0 V 50 W a t 100 ° C C ase Temperature 10 A Peak Collector Current

B0599

Abstract: PT9796A 2N5983 2N5862 2n5036 2N6368 B0301 tlp560 2N5037 acrian inc
Contextual Info: POWER SILICON NPN Item Number Part I C 5 10 Number 20 TIP57A TIP561 TIP58A TIP58A TIP58A FT413 FT413 TIP537 ~:~g • 25 30 BU207A BU208A BU412 BU412 BU411 BU411 40633 40633 ~~:~g 35 · 40 MJ4247 MRF240 J·ZER03055 2SC2629 S25-12 2N6368 PT9796 PT9796A ~~~~~~H

npn 100w

Abstract: BUW41 BUW41A BUX31B THOMSON DISTRIBUTOR 58e d 2N6542 2N6544 2N6671 2N6672 2N6673
Contextual Info: TH OM SO N/ D I S T R I B U T O R SflE D Bipolar Power Transistors High-Voltage • []0[1573D SOI ■ V c E s a t -V 250 300 300 300 3 25 3 50 400 4 00 4 00 300 □ 65 0 65 0 45 0 4 00 □ 550 650 450□ 450 □ 2 N 6 6 7 8 S w itch M a x FAM ILY (n -p -n )

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

SKC10C75

Abstract: SKC10C70 SKC10A75 2sc2303 BUY70 STI403 2SC2650 idc33
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type >c Max V BR CEO (A) Of) PD Max hFE fT ON) Min (Hz) ICBO t0N r (CE)sat Toper Max Max (A) (8) Max (Ohms) Max (°C) Package Style D vices 20 Watts or More, (Cont'd) 5 10 15 20 25 30 35 40 45

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

2N5657 equivalent

Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.

2SD669 equivalent

Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc

2SC495

Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink

"Tektronix 475"

Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,

D42C5

Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is

mje521 equivalent

Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry

2N3055

Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes

2N5631 equivalent

Abstract: 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —

BD179-10 equivalent

Abstract: BU108 2SA1046 2SC7 BDX54 BUX98A BU326 BU100 bul1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD179 BD179-10 Plastic Medium Power Silicon NPN Transistor 3.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 30 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.

sec tip41c

Abstract: MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJL3281A* PNP MJL1302A*  Data Sheet Designer's Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS • The MJL3281A and MJL1302A are PowerBase power transistors for high power

TRANSISTOR BC 384

Abstract: BU108 bd139 equivalent transistor 2N3055 equivalent RCA1C03 transistor Bc 574 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF47 High Voltage Power Transistor Isolated Package Applications NPN SILICON POWER TRANSISTOR 1 AMPERE 250 VOLTS 28 WATTS Designed for line operated audio output amplifiers, switching power supply drivers and other switching applications, where the mounting surface of the device is required