TC 239 Search Results

common rail bosch

Abstract: 2F 1 marking MC68HC05X4 rev counter AM3 Processor Functional Data Sheet Bosch Common Rail microprocessor bosch 00FF HC05 M68HC05
Contextual Info: Dr af tC MC68HC05X4/D Rev 1.0 tC Dr af tC MC68HC05X4 Dr af HCMOS Microcontroller Unit TECHNICAL DATA tC af Dr tC af Dr Dr af tC af tC List of Sections List of Sections Dr List of Sections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

24N10

Contextual Info: AdvancedTechnical Information IXFK24N100 IXFX 24N100 V DSS ^D25 R Single MOSFET Die ft> Symbol Test Conditions v Td = 25°Cto 150°C Tj =25°C to150°C ;R GS=1 Mi2 V V ±20 i3 0 V V ' ar Tc =25°C Tc =25°C, N otel Tc =25°C 24 96 24 A A A Tc =25°C Tc =25°C

Contextual Info: nixYS Advanced Technical Information IXFX 90N30 IXFK 90N30 HiPerFET Power MOSFETs VDSS Single MOSFET Die Maximum Ratings TestConditions V Td = 25°C to 150°C Td = 25°C to 150°C; RGS = 1 M£i 300 300 V V Continuous Transient ±20 ±30 V V Tc Tc Tc Tc

Contextual Info: Square Plastic Bridge Rectifiers - Quick Guide CURRENT VOLTAGE PEAK SURGE CURRENT CASE FBI000 to FB1010 10 A @ Tc = 55 °C 50+ 1.000 V 200 A PLASTIC FB1000L to FB1010L 10 A @ Tc =55 °C 50+ 1.000 V 200 A PLASTIC FBI 500 to FB1510 15 A @ Tc = 55°C 50+ 1.000 V

d5565

Contextual Info: QIXYS ADVANCEDTECHNICAL INFORMATION HiPerFET Power MOSFET IXFK 44N60 DSS I Single MOSFET Die trr <250 ns Symbol Test Conditions V V™ Tj = 25°C to 150°C T, = 25°C to 150°C 600 600 V V Vos Continuous Transient ¿20 ±30 V V Tc =25°C Tc = 25° C Tc =25°C

IXGH50N60B

Contextual Info: HiPerFASTTM IGBT IXGH 50N60B IXGK 50N60B IXGT 50N60B Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 75 A IC90 TC = 90°C ICM TC = 25°C, 1 ms

110N2

Contextual Info: ftiY V C E B W i. HiPerFET Power MOSFET IX FN IXFN IX F K IX F K Single M OSFET Die Symbol Test Conditions IXFK Tj Tj Vos VGSM Continuous Transient • w <« = 25°C to150°C = 25°C to 150°C Tc = 25°C Tc = 25«C Tc = 25°C 120N 20 110N 20 120N 20

60N60

Abstract: 60n60 igbt transistor 60N60 60n60 ixgh ixfh 60N60
Contextual Info: Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C, limited by leads 75 A IC90 TC = 90°C 60 A ICM TC = 25°C, 1 ms 200 A SSOA RBSOA VGE = 15 V, TVJ = 125°C, RG = 10 W

60N60

Abstract: ixfh 60N60 60n60 igbt IXGH60N60
Contextual Info: Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C, limited by leads 75 A IC90 TC = 90°C 60 A ICM TC = 25°C, 1 ms 200 A SSOA RBSOA VGE = 15 V, TVJ = 125°C, RG = 10 W

4 mm Vibration Motor

Abstract: AL700
Contextual Info: ss» SPECIFICATION FOR APPROVAL CUSTOMER DESCRIPTION * DIMENSIONS MODEL APPROVED NO AXIAL AC FAN 172X150X51 mm A2175HBT-TC AUTHORIZED APPROVED BY MOTOR-ONE ELECTRONICS INC. P.O.BOX 919 KAOHSIUNG TAIWAN,R.O.C. ft AXIAL AC FAN MODEL: A2175HBT-TC CHARACTERISTICS

FOP 244 tn

Contextual Info: Waveforms for 72 pin Modules SIEMENS Semiconductor Group 239 Waveforms for 72 pin Modules SIEMENS fee fop ÌRAS - IH RAS V t V tc S H tfíCD • tn s H - tC R P tCAS - IH CAS ÍRAD ÍASR Address IH tfíA L tCAH Use Row ÍASR Row Column tcWL r a h tw e s WE

60N60

Abstract: 60n60 igbt ixfh 60N60 IXGH60N60 TO-264 Jedec package outline
Contextual Info: Symbol Test Conditions VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C, limited by leads 75 A IC90 TC = 90°C 60 A ICM TC = 25°C, 1 ms 200 A SSOA RBSOA VGE= 15 V, TVJ = 125°C, RG = 10 W

sd 20n60

Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
Contextual Info: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06

40n60 igbt

Abstract: 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60
Contextual Info: SCSOA IGBT S-Series / D-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode Short Circuit Current Rated SCSOA IGBT S-Series Contents IGBT VCES max V High Speed Low VCE(sat) 600 IC VCE(sat) max TC = 25 °C TC = 25 °C A V TO-220 (IXSP) TO-263

MOSFET 11N80 Data sheet

Abstract: MOSFET 11N80 6N80 IXTN 36N50 C 11n80 ixys ixtn 79n20 ixys ixtn 36n50 6n90 12n100 IRFP 640
Contextual Info: Standard MOSFET T-Series MegaMOSTMFET Standard MOSFET T-Series Contents VDSS max TO-247 TO-220 IXTP TO-263 (IXTA) TO-264 miniBLOC (IXTN) ID(cont) TC = 25 °C A R DS(on) TC = 25 °C Ω 100 67 75 0.025 0.02 IXTH 67N10 IXTH 75N10 C2-4 200 30 0.085 IRFP 250

200n60

Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
Contextual Info: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40

32N50Q

Abstract: BTAA
Contextual Info: VDSS HiPerFETTM Power MOSFETs Q-Class IXFK/IXFX 30N50Q IXFK/IXFX 32N50Q Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 500 V VGS Continuous ±20 V VGSM Transient ±30 V I D25 TC = 25°C IDM TC = 25°C,

THERMISTORS nsp 037

Abstract: Thyristor TAG 9118 ICA 0726 0148 Transformer a1273 y k transistor AM97C11CN transistor SK A1104 PM7A2Q B8708 bzy79 yh 5032
Contextual Info: INDEX OF COMPONENTS A Section/Page No. A.C. Adaptor. Adaptor Kits BNC e tc . Adhesive Tapes. Adhesives, Various. Aerosols.

50N60B

Abstract: IXGH50N60B TO-264-aa DSA003703
Contextual Info: HiPerFASTTM IGBT IXGH 50N60B IXGK 50N60B IXGT 50N60B Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 75 A IC90 TC = 90°C 50 A

ixys ixfn 55n50

Abstract: S06 rectifier
Contextual Info: Vi • ' HiPerFET Power MOSFET IXFN 55N50 IXFN 50N50 IXFK 55N50 IXFK 50N50 Single MOSFET Die Test Conditions IXFK 55 v = 25°C to 150°C = 25°C to 150°C Vo«, T, Tj VGS v 0SM Continuous Transient ^025 ' dm® 1» Tn = 25°C = 25°C Tc = 25°C E*r Tc = 25°C

Contextual Info: v. High Current MegaMOS FET IXTK 74N20 VDSS D 25 RDS on N-Channel Enhancement Mode = 200 V = 74 A = 35 mii TO-264 AA ' DGR T, = 2 5°C to 150°C; f^s= 1.0 Mfì es Continuous G SM Transient D 25 200 ±20 ±30 Tc = 25° C Tc = 2 5 °C, pulse width limited byJ TJM

T0-94

Contextual Info: M phase control th yris to rs studs t v S tu d D e v ic e s Part and Ordering Number V ^D R M ^R R M ^T RMS @ Tc = 60”C Tc = 6 0 C l2t @T v B= i @ T V, It @ T vj ^TSM rT R thfl-c) p th(c-hs) dV/dt (V) fAl ÎAÏ (kA) (A2sx103) (V) (mQ) CC/w) (’C/W) m s)

Contextual Info: N TC TH ERM ISTO RS: STANDARD DISCS - D105 MATERIA! DATA: DIMENSIONS: Resistance range @ 25°C. 800 Q to 12K £2t Temperature coefficient of resistance a @ 25°C. -4.49%/°C Operating temperature range.-50°C to +150°C

a1175

Abstract: a1700 12FL A1175-HBT
Contextual Info: SUNON SPECIFICATION FOR APPROVAL CUSTOMER : DESCRIPTION : AXIAL AC FAN DIMENSIONS : 172X151X51 mm MODEL : A1175-HBT TC APPROVED NO : AUTHORIZED APPROVED BY DAWN. Yuchen 5/4 CHKD. Kiddy : APPD. Winner SPEC. NO. ISSUE DATE EDITION REVISE DATE E.SPEC A170013