44N60 Search Results

Contextual Info: Advanced Technical Information IXFN 44N60 HiPerFETTM Power MOSFETs Single Die MOSFET VDSS ID25 RDS on D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr S Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 600 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ

44N60

Abstract: IXFN44N60
Contextual Info: IXFL 44N60 HiPerFETTM Power MOSFETs Single Die MOSFET VDSS = ID25 = RDS on = N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr 600 V 41 A Ω 130 mΩ trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

44N60

Contextual Info: HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 44N60 VDSS = 600 V ID25 = 38 A RDS on = 130 mW (Electrically Isolated Back Surface) trr £ 250 ns Single MOSFET Die Symbol Test Conditions Maximum Ratings VDSS VDGR T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW

44N60

Abstract: 125OC
Contextual Info: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 44N60 VDSS = ID25 = RDS on = D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Test Conditions trr £ 250 ns G S Symbol S Maximum Ratings VDSS T J = 25°C to 150°C 600 V VDGR T J = 25°C to 150°C; RGS = 1 MW

Contextual Info: DIXYS Advanced Technical Information HiPerFET Power MOSFETs Single Die MOSFET IXFN 44N60 VDSS = D25 RDS on = trr <250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions v DSS T j =25°Cto150°C 600 V v DGR Tj = 25° C to 150° C; RGS= 1 Mi2

44N60

Contextual Info: HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 44N60 VDSS = 600 V ID25 = 38 A RDS on = 130 mW (Electrically Isolated Back Surface) trr £ 250 ns Single MOSFET Die Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW

44N60

Abstract: tc 122 25 5
Contextual Info: HiPerFETTM Power MOSFETs IXFX 44N60 IXFK 44N60 VDSS ID25 RDS on Single MOSFET Die trr £ 250 ns Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 600 600 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 IDM IAR TC = 25°C

Contextual Info: IXFE 44N60 HiPerFETTM Power MOSFETs Single Die MOSFET VDSS ID25 RDS on D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600

Contextual Info: HiPerFETTM Power MOSFETs IXFX 44N60 IXFK 44N60 VDSS ID25 RDS on Single MOSFET Die trr £ 250 ns Symbol Test Conditions VDSS VDGR T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW 600 600 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 IDM IAR TC = 25°C

Contextual Info: □ IX Y S Advanced Technical Information IXFN 44N60 HiPerFET Power MOSFETs Single Die MOSFET VDSS r ds,o„, V DSS Td = 25°C to 150°C 600 V v DGR Td = 25°C to 150°C; RGS = 1 M£i 600 V VGS Continuous ±20 V V GSM Transient ±30 V ^D25 Tc = 25°C 44

Contextual Info: HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 44N60 VDSS = 600 V ID25 = 38 A RDS on = 130 mW (Electrically Isolated Back Surface) Single MOSFET Die trr £ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW

44N60

Contextual Info: IXFX 44N60 HiPerFET TM Power MOSFETs VDSS ID25 RDS on Single MOSFET Die = = = 600 V 44 A 130 mW trr £ 250 ns Preliminary data sheet Maximum Ratings PLUS 247TM (IXFX) Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ

Contextual Info: n ix Y S HiPerFET Power MOSFETs IXFX 44N60 V DSS ^D25 R DS on Single MOSFET Die 600V 44A 130 mil trr <250 ns Preliminary data sheet Maximum Ratings Symbol Test Conditions V V DOR T j =25°C to150°C T j = 2 5 °C to 1 5 0 °C ;R GS=1 MO 600 600 V V V GS

Contextual Info: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 44N60 VDSS = ID25 = RDS on = D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr trr £ 250 ns G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MW

w44a

Abstract: 44N60 IXFN44N60
Contextual Info: HiPerFETTM Power MOSFETs Single Die MOSFET IXFE 44N60 VDSS ID25 RDS on D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr S trr ≤ 250 ns S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ

44N60

Abstract: 125OC
Contextual Info: HiPerFETTM Power MOSFETs IXFX 44N60 IXFK 44N60 VDSS ID25 RDS on Single MOSFET Die trr £ 250 ns Symbol Test Conditions VDSS VDGR T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW 600 600 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 IDM IAR TC = 25°C

Contextual Info: □ IXYS Advanced Technical Information HiPerFET Power MOSFETs IXFX 44N60 IXFK 44N60 600 V 44 A 130 mQ V,DSS ^D25 R DS on Single MOSFET Die t rr < 250 ns Maximum Ratings Symbol Test Conditions V VDGR Td = 25°C to 150°C Td = 25°C to 150°C; RGS = 1 M£i

44N60

Abstract: fast diode SOT-227
Contextual Info: ADVANCED TECHNICAL INFORMATION HiPerFETTM Power MOSFET IXFK 44N60 IXFN 44N60 VDSS ID25 RDS on Single MOSFET Die = = = 600 V 44 A 130 mW trr £ 250 ns TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK 44N60 IXFN 44N60 VDSS VDGR TJ = 25°C to 150°C

Contextual Info: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 44N60 VDSS = ID25 = RDS on = 600 V 44 A 130 mW D trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S Symbol Test Conditions S Maximum Ratings VDSS T J = 25°C to 150°C 600 V VDGR

d5565

Contextual Info: QIXYS ADVANCEDTECHNICAL INFORMATION HiPerFET Power MOSFET IXFK 44N60 DSS I Single MOSFET Die trr <250 ns Symbol Test Conditions V V™ Tj = 25°C to 150°C T, = 25°C to 150°C 600 600 V V Vos Continuous Transient ¿20 ±30 V V Tc =25°C Tc = 25° C Tc =25°C

transistor 12n60c

Abstract: 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET
Contextual Info: ISOPLUS Summary Title Page Isolated Discrete Packages A4 - 1 ISOPLUS247TM A4 - 2 ISOPLUS i4-PACTM A4 - 3 ISOPLUS247 – ISOPLUS i4-PACTM Isolated Discrete Packages ISOPLUS247™ is the DCB isolated version of the PLUS247™-package TO247 without a mounting hole . The design

12N60c equivalent

Abstract: 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q
Contextual Info: ISOPLUS Family ISOPLUS220 ISOPL US247™ ISOPLUS ¡4-PAC™ IS O P LU S 22rM Isolated Discrete Packages IS O P LU S 247™ is th e D C B is o la te d version o f th e P L U S 247™ -package TO 2 4 7 w ith o u t a m o u n tin g h o le . T h e d e s ig n o f th is n e w p a c k a g e (p a te n t

C1162

Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158
Contextual Info: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)

sd 20n60

Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
Contextual Info: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06