T0206 Search Results

2n706 transistor

Abstract: transistor 2n706 2n2222 2N2222AA 2N706 2n2222 jan 03150 transistor transistor 2N2222 2N708 2N718
Contextual Info: N EW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTOR TO-18 sus VOLTS Ic (max) AMPS 2N706 15 0.05 2N708 15 - 2N718 40h 0.5 2N718AA 50 2N720A VcEO PACKAGE TO-18 T0206AA DEVICE TYPE @ It/ ^ CE min/max @ mA/V 1*FE c<je fx p (MHz) 20@10/1 0.6@10/1 6 200 30-120@10/l

TO-18 amps pnp transistor

Abstract: BC107 BC108
Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-18 PACKAGE DEVICE TYPE V ceo sus VOLTS (max) AMPS TO-18 T0206AA 2N2906 2N2906AA 2N2907 2N2907AA 2N3250AA 2N3251AA 2N3496 2N3497 2N3798 2N3799 2N3962 2N3963 2N3964 2N3965 2N4026 2N4027 2N4028 2N4029

2n3013

Abstract: 2n3700a
Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTOR TO-18 PACKAGE TO-18 T0206AA v DEVICE TYPE V cEO Ic sus VOLTS (max) AMPS 2N2481 15 0.05 2N2484 60 2N2895 VCE min/max @ mA/V 1»FE @ V VcE(sat) @ V @ mA/mA C(P P fx (MHz) 40/120@10/l 0.25@10/1 5 300 0.05

Contextual Info: CT"Silicoriix MRA P-Channel Enhancement-Mode MOSFET in c o r p o r a te d lw l • TYPE PACKAGE DEVICE Single TO-72 T0206AF • 3N163,3N164 Single Chip • Available as MRA1CHP TYPICAL CHARACTERISTICS Output Characteristics Transfer Characteristics VDS (V)

Contextual Info: TELEDYNE COMPONENTS 2ÛE 1 EW 3t S J L ^ J ^ i ^ !• ö T l T h O S OOOLi41]i 2 _ ü S D 1 1 0 7 , SD 1117 SEMICONDUCTOR N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs ORDERING INFORMATION Conflcwratton Sorted Chip» In Waffle Pack T0206AA TQ-1ÔÏ Package

Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTO R T O -18 PACKAGE DEVICE TYPE sus VOLTS Ic (max) AMPS TO-18 T0206AA 2N706 2N718 2N930 2N2221 2N2221A 2N2222 2N2222A 2N2368 2N2369 2N2369A 2N3227 2N2432 2N2432A 2N2481 2N2484 2N2895 2N2896 2N2897 2N3302

2n706 transistor

Abstract: transistor 2n706 2n2222 jan 2N706 2N706 JAN
Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTOR TO-18 ^C E O PACKAGE DEVICE TYPE sus VOLTS Ic (max) AMPS @ IC/ ^ C E min/max @ mA/V hpE VcE(jat) @ It/Iß v@ mA/mA TO-18 T0206AA < i\ C<p P (MHz) ÌT 20@ 10/1 0.6@10/1 6 200 30-120@10/l 0.4@10/1 6 300

vcr7n

Abstract: J270 jfets SST271
Contextual Info: Temic Semiconductors SOT23 T092 2 lead T092 (3 lead) JFETs - N-Channel Voltage-Controlled Resistors Breakdown VQIUlgg Ä f rr-" >;•; )(V) v Min Max Min Max Max ipA) Package VCR2N 20 60 -3.5 -7 -5000 TO206AA VCR4N 200 600 -3.5 -7 -200 T0206AA VCR7N 4000

2N4027

Abstract: TO-18 amps pnp transistor 2N2907aA transistor BC109 IC 8002 2N4028 2n869a 2n3963 TRANSistor BC108 2N2907
Contextual Info: N EW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-18 TO-18 T0206AA 1*FE @ IC/ ^ C E min/max @ mA/V sus VOLTS Ic (max) AMPS 2N2906 40 0.6 40/120@150/10 2N2906AA 60 0.6 2N2907 40 2N2907AA V ceo PACKAGE DEVICE TYPE V cE (M t) @ I c/I b V @ m A/m A C<P

2n3700a

Abstract: 2n3946 npn transistor 2N3947 2n4013 2N2897 2N3302 2N2484 JANTX 2N3013 JANTX ST 2N4014 2N2481
Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTOR TO-18 PACKAGE TO-18 T0206AA v n «. sus VOLTS lc (max) AMPS 2N2481 15 0.05 2N2484 60 2N2895 DEVICE TYPE VcEO hfE @ Ic/ VcE min/max @ mA/V VcE(sat) @ Ic^B V @ m A/mA C9P p fr (MHz) 40/120@10/l 0.25@10/1

to 206af

Abstract: to-206af sd210 206af SD214 rings To206AF
Contextual Info: 3bE D TELEDYNE COMPONENTS ÔIlTbQS 00077^0 S BITSC 'T-lÇ-lÇ WTELEDYNE COMPONENTS SD210 SD211 SD212 SD213 SD214 SD215 N-CHANNEL ENHANCEMENT-MODE DMOS FET SWITCHES FEATURES ABSOLUTE MAXIMUM RATINGS • ■ ■ V ds High Input to Output Isolation—120dB typical

marking code vishay SILICONIX to-236

Abstract: marking code vishay SILICONIX to-72 vishay siliconix code marking to-92
Contextual Info: PAD/JPAD/SSTPAD Series Vishay Siliconix Low-Leakage Pico-Amp Diodes PAD1 PAD5 PAD50 JPAD5 SSTPAD5 JPAD50 SSTPAD100 PRODUCT SUMMARY lR Max pA PAD1 -1 PAD5/JPAD5/SSTPAD5 -5 PAD5Q/JPAD50 -50 SSTPAD100 -100 FEATURES BENEFITS APPLICATIONS • Ultralow Leakage: PAD1 <1 pA

2n4416

Abstract: Siliconix N-Channel JFETs marking code vishay SILICONIX to-72 2N4416 Siliconix SST4416
Contextual Info: 2N4416/2N4416A/SST4416 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number V G S o ff (V) V (B R )G S S Min (V) gfs Min (mS) loss (mA) -3 0 4.5 -2 .5 to - 6 -3 5 4.5 5 -< 6 -3 0 4.5 5 2N4416 -< 6 2N4416A SST4416 5 FEATURES BENEFITS APPLICATIONS

2410m

Abstract: 0300L 2222LM 0808M 2406M 0201T 0300M 12l 7002
Contextual Info: Tem ic S e m i c o n d u c t o r s ^ S08 < > ^ T052 T0220 ^ TO237 T092 2 lead T092 (3 lead) Low-Power Discretes I I % DMOS FETs - Low-Power MOS N-Channel Enhancement-Mode I , Pm Number 14-Pin Sidebraze (P) and Plastic (J) i- V Q 1001J 30 V Q 1001P • ■

High-Speed Analog N-Channel DMOS FETs -TO-72

Abstract: sd5000 sd5000 series 51850
Contextual Info: T em ic SD5000/5400 Series Semiconductors N-Channel Lateral DMOS FETs SD5000I SD5000N SD5001N SD5400CY SD5401CY Product Summary P a rt N um ber V BR DS M in (V ) VGS(th) M a x (V) rDscon) M a x (Q ) Crss M a x (p F ) tON M a x (ns) SD5000I 20 1.5 70 @ VGs = 5 V

high range METAL detector circuit

Abstract: 905-138-5001 MFOD2405 905-138 PHOTO detector SMA 905 fiber dimensions TO206AC MFOA06 fiber optical photo detector
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Fiber O p tic s — 1 0 0 M H z F am ily P h o to D e te c to r Preamplifier Output MFOD2405 . . . designed as a monolithic integrated circuit containing both detector and preamplifier for use in computer, industrial control, and other com m unications systems.

AU-6433

Abstract: AR8132 ar8132-al1e C0324 c06-15 au6433 AR8121 AR8132 LAN 12G14530103V J0301
Contextual Info: 5 4 3 2 1 UL20A I/O Board SCHEMATIC R1.1 Transformer D PAGE 01_Block diagram 02_RTC_DC CONN 03_LAN-AR8132 04_LAN-RJ45 CONN 05.USB-Port 06.CARD READER_AU-6433 07_BT 8 9 10 11 12 08_WLAN 09_B to B connector 10-ME_-SCREW HOLE, SMT NUT 11_CRT 12_History USB 1

5d210

Abstract: SD214 5d211 sp214 SD21G SD211 5d213 5d214 SD210 SD215
Contextual Info: T OPA Z S E M I C O N D U C T O R OSE D • ^OfiSaSb O D D l O O b ’ T' 1 I - 3 ¿T -Z- SD210, SD211, SD242, SD213.SD214.SD215 SEMICONDUCTOR N-CHANNEL ENHANCEMENT-MODE D-MGS FET SWITCHES ORDERING INFORMATION T O -206AF TO-72 Package Shorting Rings SD210DE

2N3799

Contextual Info: 2N3799* MAXIM UM RATINGS Characteristic Symbol Max Unit C o lle c to r -E m itte r V o lta g e VCEO -6 0 V dc C o lle c to r-B a s e V o lta g e VCBO -6 0 Vdc E m itte r-B a s e V o lta g e vebo -5 .0 V dc 'c -5 0 m Adc = 25X PD 0.36 2.06 W a tt m W X T o ta l D e vice D is s ip a tio n :<t T q = 2 5'C

2N4427 equivalent bfr91

Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239
Contextual Info: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability

09-D2

Abstract: RGB565 to rgb888 epson 16F8H T-1228 S2D13719 T-1227 Casio 1026 casio tft T14-22 T1205A
Contextual Info: S2D13719 Mobile Graphics Engine Hardware Functional Specification Document Number: X59A-A-002-01 Status: Revision 1.2 Issue Date: 2008/10/27 SEIKO EPSON CORPORATION 2008. All Rights Reserved. Information in this document is subject to change without notice. You may download and use this document, but only for your own use in

Contextual Info: NPN SILICON PLANAR EPITAXIAL TRANSISTOR j ^ electronics ' ' umu* BCW34 • Silicon Planer Epitaxial NPN Transistor • Herm etic T 0 1 8 M etal Package • Screening Options Available ABSOLUTE MAXIMUM RATINGS 0 a = 2 5 °C unless otherwise stated v CBO Collector - Base Voltage

bcw34

Contextual Info: NPN SILICON PLANAR EPITAXIAL TRANSISTOR j ^ electronics ' ' umu* BCW34 • Silicon Planer Epitaxial NPN Transistor • Herm etic T 0 1 8 M etal Package • Screening Options Available ABSOLUTE MAXIMUM RATINGS 0 a = 2 5 °C unless otherwise stated v CBO Collector - Base Voltage

SST5484

Contextual Info: Temic S e m i c o n d u c t o r s W S08 T0220 TOS2 T0237 GateUafcage rpA> Ij>ss , u m Mifl T092 2 lead Max Min Max Min T092 (3 lead) . 9ft . Typ Max | Max Typ ] Max Comments T0220AA (T092) J210 15 12 J211 20 12 15 40 12 J212 -25 -3 -2.5 ' -4.5 -4 ~6 -1 0 0