SD210DE Search Results

SD210DE

Abstract: SD5400 sst211 sot-143
Contextual Info: SILICONIX INC 16E D • ÔS5473S GG13TÎ7 5 SD210DE SER IES C X 'S ilic o n ix Jm M in corporate d T -1 .S -Z 5 ' N-Channel Lateral D M O S FETs The SD 210D E Series of single-pole, single-throw analog switches is designed for high speed switching in audio, - video, and high-frequency

SD210DE

Abstract: A 4042 B high speed Zener Diode SD5000 SD214DE SST210 SST214 SD214DE linear
Contextual Info: SD-SST210/214 N-CHANNEL LATERAL DMOS SWITCH Linear Integrated Systems Product Summary Part Number V BR DS Min(V) VGS(th) Max (V) rDS(on) Max(Ω) Crss Max (pF) tON Max (ns) SD210DE 30 1.5 45 @ VGS = 10V 0.5 2 SD214DE 20 1.5 45 @ VGS = 10V 0.5 2 SST210 30 1.5

5d210

Abstract: SD214 5d211 sp214 SD21G SD211 5d213 5d214 SD210 SD215
Contextual Info: T OPA Z S E M I C O N D U C T O R OSE D • ^OfiSaSb O D D l O O b ’ T' 1 I - 3 ¿T -Z- SD210, SD211, SD242, SD213.SD214.SD215 SEMICONDUCTOR N-CHANNEL ENHANCEMENT-MODE D-MGS FET SWITCHES ORDERING INFORMATION T O -206AF TO-72 Package Shorting Rings SD210DE

N CHANNEL jfet Low Noise Audio Amplifier

Abstract: diode ZENER A8 P-Channel Depletion Mosfets SST214 N CHANNEL jfet ultra Low Noise Audio Amplifier 2N4351 bare die zener sd214de ultra FAST DMOS FET Switches sst210 sot-143
Contextual Info: SD-SST210/214 N-CHANNEL LATERAL DMOS SWITCH Linear Integrated Systems Product Summary Part Number V BR DS Min(V) VGS(th) Max (V) rDS(on) Max(Ω) Crss Max (pF) tON Max (ns) SD210DE 30 1.5 45 @ VGS = 10V 0.5 2 SD214DE 20 1.5 45 @ VGS = 10V 0.5 2 SST210 30 1.5

SILICONIX SD21

Abstract: TO-206A sd211de
Contextual Info: B & ffA SD21 ODE SERIES N-Channel Lateral DMOS FETs The SD210DE Series of single-pole, single-throw analog switches is designed for high speed switchign in audio, video, and high-frequency applications. These devices are designed on the Siliconix DMOS process and utilize lateral construction to achieve low

Contextual Info: m SZS S DMCB SERIES DIE N-Channel Lateral DMOS FETs The D M CB Series of single-pole, single-throw analog SD210DE SD214DE video, and high-frequency applications. These devices are designed on the Siliconix DMOS process and utilize lateral construction to achieve low capacitance of

SD210DE

Abstract: AN301 SD214DE
Contextual Info: SD210DE/214DE Siliconix NĆChannel Lateral DMOS FETs Product Summary Part Number V BR DS Min (V) VGS(th) Max (V) rDS(on) Max (W) Crss Max (pF) tON Max (ns) SD210DE 30 1.5 45 @ VGS = 10 V 0.5 2 SD214DE 20 1.5 45 @ VGS = 10 V 0.5 2 SD214DE, For applications information see AN301, page 33.

SD210DE

Abstract: SD214DE
Contextual Info: SD210DE/214DE N-CHANNEL LATERAL DMOS SWITCH Linear Integrated Systems Product Summary Features Benefits Applications • Ultra-High Speed Switching—tON: 1 ns • Ultra-Low Reverse Capacitance: 0.2 pF • Low Guaranteed rDS @5 V • Low Turn-On Threshold Voltage

Contextual Info: SD210DE/214DE N-CHANNEL LATERAL DMOS SWITCH PRODUCT SUMMARY PART NUMBER V BR DS Min (V) V(GS)th Max (V) rDS(on) Max (Ω) Crss Max (pF) tON Max (ns) SD210DE 30 1.5 45 @ VGS=10V 0.5 2 SD214DE 20 1.5 45 @ VGS=10V 0.5 2 Features Benefits Applications • Ultra-High Speed Switching—tON: 1ns

Contextual Info: SD210DE/214DE N-CHANNEL LATERAL DMOS SWITCH PRODUCT SUMMARY PART NUMBER V BR DS Min (V) V(GS)th Max (V) rDS(on) Max (Ω) Crss Max (pF) tON Max (ns) SD210DE 30 1.5 45 @ VGS=10V 0.5 2 SD214DE 20 1.5 45 @ VGS=10V 0.5 2 Features Benefits Applications • Ultra-High Speed Switching—tON: 1ns

SD210DE

Abstract: SD210 SST211 SD214DE #70607
Contextual Info: SD210DE/214DE N-Channel Lateral DMOS FETs Product Summary Part Number V BR DS Min (V) VGS(th) Max (V) rDS(on) Max (W) Crss Max (pF) tON Max (ns) SD210DE 30 1.5 45 @ VGS = 10 V 0.5 2 SD214DE 20 1.5 45 @ VGS = 10 V 0.5 2 Features Benefits Applications D D D

Contextual Info: SD210DE/214DE N-CHANNEL LATERAL DMOS SWITCH PRODUCT SUMMARY PART NUMBER V BR DS Min (V) V(GS)th Max (V) rDS(on) Max () Crss Max (pF) tON Max (ns) SD210DE 30 1.5 45 @ VGS=10V 0.5 2 SD214DE 20 1.5 45 @ VGS=10V 0.5 2 Features Benefits Applications • Ultra-High Speed Switching—tON: 1ns

Contextual Info: SD210DE-2/214DE-2 Vishay Siliconix N-Channel Lateral DMOS FETs Available Only In Extended Hi-Rel Flow PRODUCT SUMMARY Part Number V(BR)DS Min (V) VGS(th) Max (V) rDS(on) Max (W) Crss Max (pF) tON Max (ns) SD210DE-2 30 1.5 45 @ VGS = 10 V 0.5 2 SD214DE-2

SD 214DE siliconix

Abstract: SILICONIX SD21
Contextual Info: Tem ic SD210DE/214DE Semiconductors N-Channel Lateral DMOS FETs Product Summary P a rt N um ber V BR DS M in (V) V GS (th )M a x (V ) rDS(on) M a x (Q ) Crss M a x (p F ) to N M a x (ns) SD210DE 30 1.5 45 @ VGS = 10 V 0.5 2 SD214DE 20 1.5 4 5 @ V Cs = 10V

SD214DE

Abstract: SD5000 quad ultra low igss pA SD210DE
Contextual Info: SD210DE/214DE N-Channel Lateral DMOS FETs Product Summary Part Number V BR DS Min (V) VGS(th) Max (V) rDS(on) Max (W) Crss Max (pF) tON Max (ns) SD210DE 30 1.5 45 @ VGS = 10 V 0.5 2 SD214DE 20 1.5 45 @ VGS = 10 V 0.5 2 Features Benefits Applications D D D

SD214DE

Abstract: sd210de AN502 SD210DE-2 SD214DE-2 SD5000I-2
Contextual Info: SD210DE-2/214DE-2 Vishay Siliconix N-Channel Lateral DMOS FETs Available Only In Extended Hi-Rel Flow PRODUCT SUMMARY Part Number V(BR)DS Min (V) VGS(th) Max (V) rDS(on) Max (W) Crss Max (pF) tON Max (ns) SD210DE-2 30 1.5 45 @ VGS = 10 V 0.5 2 SD214DE-2

D214D

Contextual Info: Tem ic srnççmx_ SD210DE/214DE N-Channel Lateral DMOS FETs Product Summary P a r t N u m b er V br Ds M i» (V) VGS(th) M a* (V) ri)S(on) M ax (Q ) p r ss M ax (p F ) toN M ax (ns) SD210DE 30 1.5 45 @ VGS = 10 V 0.5 2 SD214DE

SD214DE linear

Abstract: SD214DE
Contextual Info: SD210DE/214DE N-CHANNEL LATERAL DMOS JFET SWITCH Linear Integrated Systems Product Summary Features Benefits Applications • Ultra-High Speed Switching—tON: 1 ns • Ultra-Low Reverse Capacitance: 0.2 pF • Low Guaranteed rDS @5 V • Low Turn-On Threshold Voltage

SD210DE-2

Abstract: SD210DE AN502 SD214DE-2 SD5000I-2
Contextual Info: SD210DE-2/214DE-2 Vishay Siliconix N-Channel Lateral DMOS FETs Available Only In Extended Hi-Rel Flow PRODUCT SUMMARY Part Number V(BR)DS Min (V) VGS(th) Max (V) rDS(on) Max (W) Crss Max (pF) tON Max (ns) SD210DE-2 30 1.5 45 @ VGS = 10 V 0.5 2 SD214DE-2

SD 214DE siliconix

Abstract: diode sb 5400
Contextual Info: Tem ic SD210DE/214DE S e m i c o n d u c t o r s N-Channel Lateral DMOS FETs Product Summary P art Number V BR DsMin(V) VGSfth) Max (V) r DS(on) Max (Q) Cr« Max (pF) toN Max (ns) SD 210DE 30 1.5 45 @ V GS = 10 V 0.5 2 SD214DE 20 1.5 45 @ VGS - 10 V 0.5 2

to 206af

Abstract: to-206af sd210 206af SD214 rings To206AF
Contextual Info: 3bE D TELEDYNE COMPONENTS ÔIlTbQS 00077^0 S BITSC 'T-lÇ-lÇ WTELEDYNE COMPONENTS SD210 SD211 SD212 SD213 SD214 SD215 N-CHANNEL ENHANCEMENT-MODE DMOS FET SWITCHES FEATURES ABSOLUTE MAXIMUM RATINGS • ■ ■ V ds High Input to Output Isolation—120dB typical

SD210DE

Abstract: SD214DE Calogic SD210 SD212 SD212DE SD214 XSD210 XSD212 XSD214
Contextual Info: High-Speed Analog N-Channel DMOS FETs SD210 / SD212 / SD214 FEATURES DESCRIPTION • • • • The Calogic SD210 is a 30V analog switch driver without a built-in protection diode from gate to substrate for use with SD212 and SD214 DMOS analog switches. High Input to Output Isolation . . . . . . . . . . . . . . . . 120dB

S10121

Contextual Info: CMOS linear image sensors S10121 to S10124 series High sensitivity and smoothly varying spectral response in UV region current-output type sensors with variable integration time function The S10121 to S10124 series are self-scanning photodiode arrays designed specifically as detectors for spectroscopy. The

TCA780

Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP