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SIHD3N50 Datasheets (6)

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Vishay Siliconix

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SIHD3N50D-BE3		Vishay Siliconix	MOSFET N-CH 500V 3A DPAK	Original	PDF	191.53KB	9
SIHD3N50D-E3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 3A TO252 DPAK	Original	PDF		9
SIHD3N50D-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 3A TO252 DPAK	Original	PDF		9
SIHD3N50DT1-GE3		Vishay Siliconix	MOSFET N-CH 500V 3A DPAK	Original	PDF	191.53KB
SIHD3N50DT4-GE3		Vishay Siliconix	MOSFET N-CH 500V 3A DPAK	Original	PDF	191.53KB
SIHD3N50DT5-GE3		Vishay Siliconix	MOSFET N-CH 500V 3A DPAK	Original	PDF	191.53KB

SIHD3N50 Price and Stock

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Vishay Intertechnologies SIHD3N50D-GE3 Transistor: N-MOSFET; unipolar; 500V; 1.9A; Idm: 5.5A; 69W
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	SIHD3N50D-GE3				1	1 $0.97 10 $0.65 100 $0.45 1000 $0.40 10000 $0.40	Get Quote
Vishay Intertechnologies SIHD3N50D
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	SIHD3N50D		2,775		1	1 $1.13 10 $1.13 100 $0.42 1000 $0.29 10000 $0.29	Buy Now
Vishay Intertechnologies SIHD3N50D-E3 Trans MOSFET N-CH 500V 3A 3-Pin(2+Tab) DPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	SIHD3N50D-E3		850		1	1 $1.13 10 $1.13 100 $0.42 1000 $0.32 10000 $0.32	Buy Now
Quest Components ()	SIHD3N50D-E3		680			1 $1.18 10 $1.18 100 $0.59 1000 $0.47 10000 $0.47	Buy Now
	SIHD3N50D-E3		680			1 $1.50 10 $1.50 100 $0.45 1000 $0.39 10000 $0.39	Buy Now
Vishay Siliconix SIHD3N50D
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components ()	SIHD3N50D		2,220			1 $1.74 10 $1.74 100 $1.74 1000 $0.70 10000 $0.61	Buy Now
	SIHD3N50D		2,220			1 $1.50 10 $1.50 100 $1.50 1000 $0.39 10000 $0.38	Buy Now
Vishay Intertechnologies SIHD3N50DGE3 POWER MOSFET Power Field-Effect Transistor, 3A I(D), 500V, 3.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	SIHD3N50DGE3		3,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote

SIHD3N50 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: SiHD3N50DA_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	sihd3n50da an609 8755u 6698m +38998m 7460m 09-jan-14	PDF
Contextual Info: SiHD3N50DA www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal design - Low area specific on-resistance - Low input capacitance (Ciss) - Reduced capacitive switching losses - High body diode ruggedness	Original	sihd3n50da o-252 2002/95/ec 2011/65/eu +2js709a 02-oct-12	PDF
Contextual Info: SiHD3N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness	Original	sihd3n50d o-252 2002/95/ec 2011/65/eu +2js709a 02-oct-12	PDF
Contextual Info: SiHD3N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness	Original	sihd3n50d o-252 2002/95/ec 2011/65/eu +2js709a 02-oct-12	PDF
sihd3n50 Abstract: SIHD3N50D-GE3 Contextual Info: SiHD3N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 550 RDS(on) max. () at 25 °C VGS = 10 V 3.2 Qg (max.) (nC) 20	Original	sihd3n50d o-252 2011/65/eu 2002/95/ec +312-mar-12 sihd3n50 sihd3n50d-ge3	PDF
Contextual Info: SiHD3N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 550 RDS(on) max. () at 25 °C VGS = 10 V 3.2 Qg (max.) (nC) 20	Original	sihd3n50d o-252 2011/65/eu 2002/95/ec +112-mar-12	PDF
IRF740BPBF Abstract: mosfets for lcd tv SiHD3N50D IRF730BPBF SiHF8N50D SiHG22N50 Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . AND TEC I INNOVAT O L OGY D Series N HN HIGH-VOLTAGE POWER MOSFETs O 19 62-2012 MOSFETs - Increased Switching Speed High-Performance 400 V, 500 V, and 600 V MOSFETs Feature “Stripe” vs. “Cellular” Geometry Technology	Original	o-220 o-251 o-220fp o-247ac +6irf740bpbf mosfets for lcd tv sihd3n50d irf730bpbf sihf8n50d sihg22n50	PDF
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	mediu33-4-9337-2727 vmn-sg2127-1210 si7121 si4914b +8si-4102 si4599 si4483a sir166 irfd120 si7949 si4459a sir836	PDF