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SIA910EDJ Datasheets (1)

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Vishay Siliconix

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SIA910EDJ-T1-GE3		Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 12V 4.5A SC-70-6	Original	PDF		9

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Vishay Intertechnologies SIA910EDJ-T1-GE3 Transistor: N-MOSFET x2; TrenchFET®; unipolar; 12V; 4.5A; Idm: 20A
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TME	SIA910EDJ-T1-GE3				3,000	1 - 10 - 100 - 1000 - 10000 $0.30	Get Quote
Verical	SIA910EDJ-T1-GE3		32		29	1 - 10 - 100 $0.20 1000 $0.20 10000 $0.20	Buy Now
Avnet Americas ()	SIA910EDJ-T1-GE3	Bulk			1	1 $1.08 10 $0.67 100 $0.44 1000 $0.33 10000 $0.32	Get Quote
	SIA910EDJ-T1-GE3	Tape & Reel		8 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.20	Buy Now
Mouser Electronics	SIA910EDJ-T1-GE3		32,073			1 $1.05 10 $0.50 100 $0.43 1000 $0.31 10000 $0.26	Buy Now
Arrow Electronics	SIA910EDJ-T1-GE3	Cut Strips	32	8 Weeks	1	1 $0.41 10 $0.35 100 $0.20 1000 $0.20 10000 $0.20	Buy Now

Newark ()	SIA910EDJ-T1-GE3	Bulk	4,976		1	1 $0.89 10 $0.42 100 $0.36 1000 $0.25 10000 $0.22	Buy Now
	SIA910EDJ-T1-GE3	Cut Tape			3,000	1 - 10 - 100 - 1000 - 10000 $0.33	Buy Now
	SIA910EDJ-T1-GE3	Tape & Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.23	Buy Now
TTI	SIA910EDJ-T1-GE3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.26	Buy Now
Bristol Electronics	SIA910EDJ-T1-GE3		184			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Asia	SIA910EDJ-T1-GE3			10 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	SIA910EDJ-T1-GE3			27 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Siliconix SIA910EDJ-T1-GE3 12V 4.5A/4.5A N-CH DUAL MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	SIA910EDJ-T1-GE3	Bulk			3,000	1 - 10 - 100 - 1000 - 10000 $0.57	Get Quote

SIA910EDJ Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: SiA910EDJ Vishay Siliconix Dual N-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 12 a RDS(on) () ID (A) 0.028 at VGS = 4.5 V 4.5 0.033 at VGS = 2.5 V 4.5 0.042 at Vgs = 1.8 V 4.5 • TrenchFET Power MOSFET • Thermally Enhanced PowerPAK®	Original	sia910edj sc-70 sc-70-6 2002/95/ec +32011/65/eu js709a 02-oct-12	PDF
TH 2267 Abstract: marking CODE cfx marking CODE D2 SC-70-6 SiA910EDJ Contextual Info: New Product SiA910EDJ Vishay Siliconix Dual N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.028 at VGS = 4.5 V 4.5 0.033 at VGS = 2.5 V 4.5 0.042 at Vgs = 1.8 V 4.5 VDS (V) 12 • Halogen-free According to IEC 61249-2-21 Definition	Original	sia910edj sc-70 2002/95/ec sc-70-6 +418-jul-08 th 2267 marking code cfx marking code d2	PDF
SiA910EDJ Contextual Info: SPICE Device Model SiA910EDJ Vishay Siliconix Dual N-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	sia910edj 18-jul-08	PDF
TH 2267 Contextual Info: New Product SiA910EDJ Vishay Siliconix Dual N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.028 at VGS = 4.5 V 4.5 0.033 at VGS = 2.5 V 4.5 0.042 at Vgs = 1.8 V 4.5 VDS (V) 12 • Halogen-free According to IEC 61249-2-21 Definition	Original	sia910edj sc-70 2002/95/ec sc-70-6 +218-jul-08 th 2267	PDF
Contextual Info: SiA910EDJ Vishay Siliconix Dual N-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 12 a RDS(on) () ID (A) 0.028 at VGS = 4.5 V 4.5 0.033 at VGS = 2.5 V 4.5 0.042 at Vgs = 1.8 V 4.5 • TrenchFET Power MOSFET • Thermally Enhanced PowerPAK®	Original	sia910edj sc-70 sc-70-6 2002/95/ec +32011/65/eu js709a 02-oct-12	PDF
3271-4 Abstract: AN609 SiA910EDJ Contextual Info: SiA910EDJ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	sia910edj an609 10-nov-09 3271-4	PDF
NX3008 Abstract: IRLHS6242 SiA431DJ AON2408 SSM6J503NU IRLHS2242 AON2420 DMN3730UFB4 FDMA1028NZ FDMA3028N Contextual Info: Advanced cross reference list DFN* MOSFETs DFN: discrete flat no-leads in development, release in Q3 2012 0.6 0.6 1.1 1.1 1 1 1 0.9 0.9 1 0.9 0.53 0.53 0.9 0.9 0.45 0.45 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.6 0.6 0.5 0.5 1 1 1.5 0.95 0.95 1.05 1.05 0.95 1.05 1.1	Original	aon2240 aon2401 aon2405 aon2406 +14aon2407 aon2408 aon2409 aon2410 aon2420 aon2701 nx3008 irlhs6242 sia431dj ssm6j503nu irlhs2242 dmn3730ufb4 fdma1028nz fdma3028n	PDF
SiA427DJ Abstract: SiA450DJ SiA447DJ SiA413DJ SiA413 SiA445EDJ SIA915DJ Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - Small 2 mm x 2 mm Size and Low On-resistance AND TEC I INNOVAT O L OGY PowerPAK SC-70 N HN POWER MOSFETs O 19 62-2012 Half the Size of TSOP-6 Without Compromising On-Resistance KEY BENEFITS • 2 mm x 2 mm footprint area is 50 % of TSOP-6 with comparable on-resistance:	Original	sc-70 com/mosfets/powerpak-sc-70-package/vmn-pt0131-1209 sia427dj +6sia450dj sia447dj sia413dj sia413 sia445edj sia915dj	PDF
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	mediu33-4-9337-2727 vmn-sg2127-1210 si7121 si4914b +8si-4102 si4599 si4483a sir166 irfd120 si7949 si4459a sir836	PDF