S10004 Search Results

SGS10004

Abstract: SGS10005P S100-04
Contextual Info: S G S-THOMSON Ü7E D | 7^2=1537 00174L1 7 | 67C 1 5 3 6 3 D « MULTIEPITAXIAL PLANAR NPN . , ~ T~ SG S10004 S10004P SG810005 , t ÎW & J S 5 Î5 K -.-V »ïS fc«S ADVANCE DATA HIGH VOLTAGE FAST SWITCHING The SG S10004/10005 are silicon power Darlington transistors with integrated base-emitter

Si2302ADS

Abstract: Si2302ADS-T1-E3 Si2302ADS-T1-GE3 2A MARKING CODE
Contextual Info: Si2302ADS Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.060 at VGS = 4.5 V 2.4 0.115 at VGS = 2.5 V 2.0 • Halogen-free According to IEC 61249-2-21 Definition • Compliant to RoHS Directive 2002/95/EC

Contextual Info: New Product SiR862DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0028 at VGS = 10 V 50 0.0035 at VGS = 4.5 V 50 VDS (V) 25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: D S 1000 DALLAS DS1000 5-Tap Silicon Delay Line SEMICONDUCTOR PIN ASSIGNMENT FEATURES • All-silicon time delay IN [ 1 T 7 14 D Vce IN £ 1 NC NCC 2 • 5 taps equally spaced NC[ 2 13 ] • Delays are stable and precise n c[ 12 ] TAP 1 3 TAP 2 £ 4 • Both leading and trailing edge accuracy

Si7141

Abstract: Si7141DP-T1-GE3 Si7141DP
Contextual Info: New Product Si7141DP Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.0019 at VGS = - 10 V - 60d 0.0030 at VGS = - 4.5 V - 60d • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: New Product SiB488DK Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.020 at VGS = 4.5 V 9 0.024 at VGS = 2.5 V 9 0.029 at VGS = 1.8 V 9 VDS (V) 12 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Inventec VAIL 2.0

Abstract: PC9603 Inventec INVENTEC davos INVENTEC DAVOS 3.0 GST5009 C5761 Compaq P58 VSS28 CN5-001
Contextual Info: DAVOS-DF PV-1-BUILD 2004.11.04 EE DATE DATE POWER DRAWER DESIGN CHECK RESPONSIBLE DATE CHANGE NO. REV 3 SIZE = FILE NAME : XXXX-XXXXXX-XX P/N XXXXXXXXXXXX INVENTEC TITLE VER : DAVOS-DF SIZE CODE A3 CS SHEET DOC. NUMBER REV PC9603 1 A01 OF 65 TABLE OF CONTENTS

Contextual Info: New Product SiR862DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0028 at VGS = 10 V 50 0.0035 at VGS = 4.5 V 50 VDS (V) 25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

S10011

Abstract: S10045 S10046 S10035 S10110 S10063 S10071 S10100 S10090 S10115
Contextual Info: S10000 Series Fixed Chip Inductors for Space Applications FEATURES Military QPL Approved. Pick-and-place compatible. SPECIFICATIONS Met the requirements of MIL-PRF83446 and MIL-STD-981, class S or class B. Class S parts are intended for critical flight and mission-essential ground

Si2302ADS

Abstract: Si2302ADS-T1-E3 Si2302ADS-T1-GE3
Contextual Info: Si2302ADS Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.060 at VGS = 4.5 V 2.4 0.115 at VGS = 2.5 V 2.0 • Halogen-free According to IEC 61249-2-21 Definition • Compliant to RoHS Directive 2002/95/EC

Contextual Info: New Product Si7141DP Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.0019 at VGS = - 10 V - 60d 0.0030 at VGS = - 4.5 V - 60d • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: 1 2 DWG. NO. THIS DRAWING IS A CONTROLLED DOCUMENT FOR SOURIAU USA, INC. IT IS SUBJECT TO CHANGE WITHOUT NOTIFICATION. CONTACT THE DOCUMENT CONTROL CENTER FOR THE LATEST REVISION. USE MAXIMUM CURRENT AMP MAXIMUM VOLTAGE (VAC) MAXIMUM WIRE (mm) 2,4 POWER

LM2665

Contextual Info: & LM2665 Switched Capacitor Voltage Converter G eneral D escription F eatu res The LM 2665 C M O S charge-pum p voltage converter oper­ ates as a voltage dou b ler for an input voltage in the range of -I-2.5V to +5.5V. Two low cost capacitors and a diode

Contextual Info: New Product SiA778DJ Vishay Siliconix N-Channel 12 V and 20 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel 1 12 Channel 2 20 RDS(on) (Ω) 0.029 at VGS = 4.5 V 0.034 at VGS = 2.5 V 0.044 at VGS = 1.8 V 0.065 at VGS = 1.5 V 0.225 at VGS = - 4.5 V 0.270 at VGS = - 2.5 V

SiB433EDK

Abstract: SC-75
Contextual Info: New Product SiB433EDK Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.058 at VGS = - 4.5 V - 9a 0.077 at VGS = - 2.5 V - 9a 0.105 at VGS = - 1.8 V -5 • Halogen-free According to IEC 61249-2-21 Definition

Contextual Info: New Product SiR862DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0028 at VGS = 10 V 50 0.0035 at VGS = 4.5 V 50 VDS (V) 25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: New Product SiR836DP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.019 at VGS = 10 V 21 0.0225 at VGS = 4.5 V 19.6 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: Si2302ADS Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.060 at VGS = 4.5 V 2.4 0.115 at VGS = 2.5 V 2.0 • Halogen-free According to IEC 61249-2-21 Definition • Compliant to RoHS Directive 2002/95/EC

JE350

Abstract: je180 MJ13004 TP33C BD325 JE172 BDX48 JE340 bd160 BUT55
Contextual Info: INDUSTRY STANDARD SGS-THOMSON BD135 BD136 BD137 BD138 BD139 BD135 BD136 BD137 BD138 BD139 BD140 BD142 BD144 BD157 BD158 BD140 BD159 BD160 BD165 BD166 BD167 BD159 SGS-THOMSON PAGE NEAREST BD157 BD158 2N5878 BD437 BD438 BD439 BD440 BD441 BD442 BD237 BD238 BD168

Contextual Info: 1 2 DWG. NO. THIS DRAWING IS A CONTROLLED DOCUMENT FOR SOURIAU USA, INC. IT IS SUBJECT TO CHANGE WITHOUT NOTIFICATION. CONTACT THE DOCUMENT CONTROL CENTER FOR THE LATEST REVISION. USE MAXIMUM CURRENT AMP MAXIMUM VOLTAGE (VAC) MAXIMUM WIRE (mm) 2,4 POWER

VRS1000

Abstract: ScansU9X22 44QFP
Contextual Info: THE M A G A Z I N E FOR C O M P U T E R A P P LI CA T IO NS NEW PRODUCT NEWS LOW-COST 8051 CONTROLLER The VERSA 1000 VRS1000-40 is a low-cost, 8-bit, 8051-based microcontroller with in-system program­ ming (ISP) capability. With its hardware features and powerful instruction

si84

Abstract: si8475
Contextual Info: Si8475EDB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 20 ID (A)a, e 0.032 at VGS = - 4.5 V - 7.7 0.051 at VGS = - 2.5 V - 6.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: New Product SiR862DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0028 at VGS = 10 V 50 0.0035 at VGS = 4.5 V 50 VDS (V) 25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

DG506B

Contextual Info: DG506B, DG507B Vishay Siliconix Precision 16-Channel/Dual 8-Channel CMOS Analog Multiplexers DESCRIPTION FEATURES The DG506B and DG507B are high performance analog multiplexers. Their ultra-low switch charge injection, low channel capacitance, and low leakage level allows them to