SIR862DP Search Results
SIR862DP Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SIR862DP-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 25V 50A 8-SOIC | Original | 7 |
SIR862DP Price and Stock
Vishay Intertechnologies SIR862DP-T1-GE3- Tape and Reel (Alt: SIR862DP-T1-GE3) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIR862DP-T1-GE3 | Tape & Reel | 52 Weeks | 3,000 |
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SIR862DP-T1-GE3 | 20,602 |
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SIR862DP-T1-GE3 | Tape & Reel | 3,000 |
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SIR862DP-T1-GE3 | Reel | 3,000 |
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SIR862DP-T1-GE3 | 3,000 |
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SIR862DP-T1-GE3 | 53 Weeks | 3,000 |
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Vishay Siliconix SIR862DP-T1-GE3SIR862DP-T1-GE3 N-CHANNEL MOSFET TRANSISTOR, 32 A, 25 V, 8-PIN POWERPAK SO |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIR862DP-T1-GE3 | Bulk | 300 |
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SIR862DP Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: New Product SiR862DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0028 at VGS = 10 V 50 0.0035 at VGS = 4.5 V 50 VDS (V) 25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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sir862dp2002/95/ecsir862dp-t1-ge318-jul-08 | |
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Contextual Info: New Product SiR862DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0028 at VGS = 10 V 50 0.0035 at VGS = 4.5 V 50 VDS (V) 25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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sir862dp2002/95/ecsir862dp-t1-ge32011/65/eu+2 | |
mosfet 4800
Abstract: 511000 4800 mosfet AN609
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sir862dpan60931-mar-10mosfet 4800+2 | |
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Contextual Info: New Product SiR862DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0028 at VGS = 10 V 50 0.0035 at VGS = 4.5 V 50 VDS (V) 25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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sir862dp2002/95/ecsir862dp-t1-ge318-jul-08 | |
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Contextual Info: SPICE Device Model SiR862DP www.vishay.com Vishay Siliconix N-Channel 25 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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sir862dp2002/95/ec2011/65/eujs709a+1 | |
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Contextual Info: SPICE Device Model SiR862DP Vishay Siliconix N-Channel 25 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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sir862dp18-jul-08 | |
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Contextual Info: New Product SiR862DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0028 at VGS = 10 V 50 0.0035 at VGS = 4.5 V 50 VDS (V) 25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
Original |
sir862dp2002/95/ecsir862dp-t1-ge32011/65/eu+2 | |
si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
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mediu33-4-9337-2727vmn-sg2127-1210si7121si4914b+8 |