S10011 Search Results

10011B

Contextual Info: 深圳市佳美光电电子有限公司 产品规格书 JM-S10011A-B DATA SHEET 制表 审核 制图 批准 编号 页数 日期 电话 0755-83937281,83937283 传真 0755-83937036 网址 Http://www.led-china.com 邮箱 Sales@led-china.com 深圳市佳美光电电子有限公司

Si1303DL-T1-gE3

Abstract: sc70-3 PCB PAD SI1303D SOT-323 31 MOSFET sc-70 package pcb layout F MARKING 6PIN
Contextual Info: Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.430 at VGS = - 4.5 V - 0.72 0.480 at VGS = - 3.6 V - 0.68 0.700 at VGS = - 2.5 V - 0.56 • Halogen-free According to IEC 61249-2-21 Definition

SI7143DP-T1-GE3

Abstract: Si7143DP si7143
Contextual Info: New Product Si7143DP Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e,f 0.0100 at VGS = - 10 V - 35 0.0186 at VGS = - 4.5V - 35 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Si2300DS

Contextual Info: New Product Si2300DS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.068 at VGS = 4.5 V 3.6a 0.085 at VGS = 2.5 V 3.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.430 at VGS = - 4.5 V - 0.72 0.480 at VGS = - 3.6 V - 0.68 0.700 at VGS = - 2.5 V - 0.56 • Halogen-free According to IEC 61249-2-21 Definition

Contextual Info: Si1903DL Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.995 at VGS = - 4.5 V ± 0.44 1.190 at VGS = - 3.6 V ± 0.40 1.8 at VGS = - 2.5 V ± 0.32 • Halogen-free According to IEC 61249-2-21 Definition

F MARKING 6PIN

Contextual Info: Si1305DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.280 at VGS = - 4.5 V - 0.92 0.380 at VGS = - 2.5 V - 0.79 0.530 at VGS = - 1.8 V - 0.67 • Halogen-free According to IEC 61249-2-21 Definition

Contextual Info: + July 1998 D S 9 2 L V 1 021 a n d D S 9 2 L V 1 2 1 0 1 6 - 4 0 M H z 10 B it B u s L V D S S e r i a l i z e r a n d D e s e r i a l i z e r due to charged cable conditions. The DS92LVf02f output pins may be TRI-STATE to achieve a high impedance stale. The PLLcan lock to frequencies between f 6 MHz and

Contextual Info: Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.430 at VGS = - 4.5 V - 0.72 0.480 at VGS = - 3.6 V - 0.68 0.700 at VGS = - 2.5 V - 0.56 • Halogen-free According to IEC 61249-2-21 Definition

S10011

Abstract: S10045 S10046 S10035 S10110 S10063 S10071 S10100 S10090 S10115
Contextual Info: S10000 Series Fixed Chip Inductors for Space Applications FEATURES Military QPL Approved. Pick-and-place compatible. SPECIFICATIONS Met the requirements of MIL-PRF83446 and MIL-STD-981, class S or class B. Class S parts are intended for critical flight and mission-essential ground

P0736

Abstract: 14ax
Contextual Info: Semiconductor ß LM2635 5-Bit Programmable Synchronous Buck Regulator Controller G e n eral D e s c rip tio n The LM 2635 is a high speed controller designed specifically fo r use in synchronous D C/DC buck converters fo r the Pentium II or D eschutes m icroprocessor. A 5-bit DAC ac­

Si1305DL

Abstract: vishay MOSFET code marking
Contextual Info: Si1305DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.280 at VGS = - 4.5 V - 0.92 0.380 at VGS = - 2.5 V - 0.79 0.530 at VGS = - 1.8 V - 0.67 • Halogen-free According to IEC 61249-2-21 Definition

S10011

Abstract: drMOS compatible
Contextual Info: SiC769ACD Vishay Siliconix Integrated DrMOS Power Stage DESCRIPTION FEATURES The SiC769ACD is an integrated solution that contains PWM optimized n-channel MOSFETs high side and low side and a full featured MOSFET driver IC. The device complies with the Intel DrMOS standard for desktop and server Vcore power

Si2300DS

Abstract: SI2300 Si2300DS-T1-GE3 P2 MARKING CODE s100111rev
Contextual Info: New Product Si2300DS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.068 at VGS = 4.5 V 3.6a 0.085 at VGS = 2.5 V 3.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: Si1403BDL Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.150 at VGS = - 4.5 V - 1.5 - 20 0.175 at VGS = - 3.6 V - 1.4 0.265 at VGS = - 2.5 V - 1.2 • Halogen-free According to IEC 61249-2-21 Definition

Si1403BDL-T1-E3

Abstract: Si1403BDL-T1-GE3 S10011
Contextual Info: Si1403BDL Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.150 at VGS = - 4.5 V - 1.5 - 20 0.175 at VGS = - 3.6 V - 1.4 0.265 at VGS = - 2.5 V - 1.2 • Halogen-free According to IEC 61249-2-21 Definition

100C

Abstract: MLP66-40 MOSFET Device Effects on Phase Node Ringing in VR SiC76 SiC769ACD
Contextual Info: SiC769ACD Vishay Siliconix Integrated DrMOS Power Stage DESCRIPTION FEATURES The SiC769ACD is an integrated solution that contains PWM optimized n-channel MOSFETs high side and low side and a full featured MOSFET driver IC. The device complies with the Intel DrMOS standard for desktop and server Vcore power

Si1303DL-T1-gE3

Abstract: Si1303DL
Contextual Info: Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.430 at VGS = - 4.5 V - 0.72 0.480 at VGS = - 3.6 V - 0.68 0.700 at VGS = - 2.5 V - 0.56 • Halogen-free According to IEC 61249-2-21 Definition

SiC769CD

Abstract: 100C MLP66-40 SiC769CD-T1-E3 IHLP-5050EZ SiC769DB intel drMOS compliant MOSFET Device Effects on Phase Node Ringing in VR
Contextual Info: SiC769CD Vishay Siliconix Integrated DrMOS Power Stage • FEATURES • Integrated Gen III MOSFETs and DrMOS compliant gate driver IC • Enables Vcore switching at 1 MHz • Easily achieve > 90 % efficiency in multi-phase, low output voltage solutions • Low ringing on the VSWH pin reduces EMI

Contextual Info: Si1903DL Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.995 at VGS = - 4.5 V ± 0.44 1.190 at VGS = - 3.6 V ± 0.40 1.8 at VGS = - 2.5 V ± 0.32 • Halogen-free According to IEC 61249-2-21 Definition

Contextual Info: Si1305DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.280 at VGS = - 4.5 V - 0.92 0.380 at VGS = - 2.5 V - 0.79 0.530 at VGS = - 1.8 V - 0.67 • Halogen-free According to IEC 61249-2-21 Definition

Contextual Info: Si1903DL Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.995 at VGS = - 4.5 V ± 0.44 1.190 at VGS = - 3.6 V ± 0.40 1.8 at VGS = - 2.5 V ± 0.32 • Halogen-free According to IEC 61249-2-21 Definition

AN814

Contextual Info: Si1903DL Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.995 at VGS = - 4.5 V ± 0.44 1.190 at VGS = - 3.6 V ± 0.40 1.8 at VGS = - 2.5 V ± 0.32 • Halogen-free According to IEC 61249-2-21 Definition

SiC76

Contextual Info: SiC769ACD Vishay Siliconix Integrated DrMOS Power Stage DESCRIPTION FEATURES The SiC769ACD is an integrated solution that contains PWM optimized n-channel MOSFETs high side and low side and a full featured MOSFET driver IC. The device complies with the Intel DrMOS standard for desktop and server Vcore power