S10046 Search Results

Contextual Info: Si4804BDY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.022 at VGS = 10 V 7.5 0.030 at VGS = 4.5 V 6.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized

SUD45P03-09-GE3

Abstract: SUD45P03-09
Contextual Info: SUD45P03-09 Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.0087 at VGS = - 10 V - 45d 0.0150 at VGS = - 4.5 V - 32 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: SUD45P03-09 Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.0087 at VGS = - 10 V - 45d 0.0150 at VGS = - 4.5 V - 32 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: SUD45P03-09 Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.0087 at VGS = - 10 V - 45d 0.0150 at VGS = - 4.5 V - 32 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

S10011

Abstract: S10045 S10046 S10035 S10110 S10063 S10071 S10100 S10090 S10115
Contextual Info: S10000 Series Fixed Chip Inductors for Space Applications FEATURES Military QPL Approved. Pick-and-place compatible. SPECIFICATIONS Met the requirements of MIL-PRF83446 and MIL-STD-981, class S or class B. Class S parts are intended for critical flight and mission-essential ground

Si4712

Abstract: Si4712DY
Contextual Info: SPICE Device Model Si4712DY Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

137C1

Contextual Info: r r 7 ^ 7 # S G S -T H O M S O N IM D S i« ! » « ! ms4HCT137 M 7 4 H C T 1 37 3 TO 8 LINE DECODER/LATCH INVERTING • HIG HSPEED tpD = 17 ns (TYP.) AT Vcc = 5 V . LOW POWER DISSIPATION Ice = 4 fiA (MAX.) AT TA = 25 °C ■ COMPATIBLE WITH TTL OUTPUTS

si4574

Contextual Info: Si4574DY Vishay Siliconix N- and P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 40 P-Channel - 40 ID (A)a Qg (Typ.) RDS(on) (Ω) 0.0175 at VGS = 10 V 10 0.020 at VGS = 4.5 V 9.2 0.021 at VGS = - 10 V - 9.2 0.028 at VGS = - 4.5 V - 7.4

SiR880DP

Abstract: v2410
Contextual Info: SPICE Device Model SiR880DP Vishay Siliconix N-Channel 80 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

M74HCT13

Contextual Info: Æ T SCS-TNOM SON *7# RÂlOMtlILIlÊ'irmDgi M54HCT138 M74HCT138 3 TO 8 LINE DECODER • LOW POWER DISSIPATION IC C = 4 f*A MAX. at TA = 25°C ■ HIGH NOISE IMMUNITY V n ih = VNIL= 28% VCc (MIN.) ■ OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS ■ SYMMETRICAL OUTPUT IMPEDANCE

Si4804BDY

Abstract: Si4804BDY-T1-E3 Si4804BDY-T1-GE3
Contextual Info: Si4804BDY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.022 at VGS = 10 V 7.5 0.030 at VGS = 4.5 V 6.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized

Contextual Info: Si4804BDY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.022 at VGS = 10 V 7.5 0.030 at VGS = 4.5 V 6.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized

1-EG05-AN6X-V1331

Abstract: 1-EG05-AP6X-V1331 S4608540 S4608740
Contextual Info: Housing Style 4 mm - Embeddable, Miniature Smooth, picofast Quick Disconnect Part Number Bi 1-EH04-AN6X-V1331 ID Number Features Sen s Ran ing ge m m Inductive Sensors Output 1 S4608540 3-Wire DC NPN Bi 1-EH04-AP6X-V1331 1 S4608440 3-Wire DC PNP Bi 1-EH04-Y1-V1330

Contextual Info: Si4804BDY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.022 at VGS = 10 V 7.5 0.030 at VGS = 4.5 V 6.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized

Contextual Info: New Product SiJ420DP Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0026 at VGS = 10 V 50 0.0032 at VGS = 4.5 V 50 VDS (V) 20 Qg (Typ.) 28.7 nC PowerPAK SO-8L Single • Halogen-free According to IEC 61249-2-21

Contextual Info: Housing Style 4 mm - Embeddable, Miniature Smooth, picofast Quick Disconnect Part Number Bi 1-EH04-AN6X-V1331 ID Number Features Sen s Ran ing ge m m Inductive Sensors Output 1 S4608540 3-Wire DC NPN Bi 1-EH04-AP6X-V1331 1 S4608440 3-Wire DC PNP Bi 1-EH04-Y1-V1330

Contextual Info: Housing Style 6.5 mm - Embeddable, Miniature Smooth Barrel, Potted-In Cable 6.5 mm - Embeddable, Miniature Smooth Barrel, Potted-In Cable 6.5 mm - Embeddable, Miniature Smooth Barrel, Potted-In Cable Part Number ID Number Features Sen s Ran ing ge m m Inductive

SUD45P03-09-GE3

Contextual Info: SUD45P03-09 Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.0087 at VGS = - 10 V - 45d 0.0150 at VGS = - 4.5 V - 32 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: SUD45P03-09 Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.0087 at VGS = - 10 V - 45d 0.0150 at VGS = - 4.5 V - 32 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET