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    S10045 Search Results

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    S10045 Price and Stock

    Vishay Intertechnologies

    Vishay Intertechnologies GWS10045109KLX000

    Resistor Wirewound 51 Ohm 10% 80W 100ppm/K to 180ppm/K Loose Pack - Bulk (Alt: GWS10045109KLX000)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas GWS10045109KLX000 Bulk 24 Weeks 5
    • 1 -
    • 10 $44.92
    • 100 $20.80
    • 1000 $20.27
    • 10000 $20.27
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    Vishay Intertechnologies GWS10045609JLX000

    Resistor, 56 Ohm, ? 5%, 80 W, Wirewound, High Power High Pulse, Screw - Bulk (Alt: GWS10045609JLX000)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas GWS10045609JLX000 Bulk 24 Weeks 5
    • 1 -
    • 10 $49.41
    • 100 $22.86
    • 1000 $22.28
    • 10000 $22.28
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    Avnet Abacus GWS10045609JLX000 Tape & Reel 23 Weeks 5
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    Vishay Intertechnologies GWS10045109JLX000

    Resistor Wirewound 51 Ohm 5% 80W 100ppm/K to 180ppm/K Loose Pack - Bulk (Alt: GWS10045109JLX000)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas GWS10045109JLX000 Bulk 24 Weeks 5
    • 1 -
    • 10 $49.41
    • 100 $22.86
    • 1000 $22.28
    • 10000 $22.28
    Buy Now

    Vishay Intertechnologies GWS10045609KLX000

    Resistor Wirewound 56 Ohm 10% 80W 100ppm/K to 180ppm/K Loose Pack - Bulk (Alt: GWS10045609KLX000)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas GWS10045609KLX000 Bulk 24 Weeks 5
    • 1 -
    • 10 $44.92
    • 100 $20.80
    • 1000 $20.27
    • 10000 $20.27
    Buy Now

    Vishay Intertechnologies GWS10045601JLX000

    Resistor Wirewound 5.6k Ohm 5% 80W 100ppm/K to 180ppm/K Loose Pack - Bulk (Alt: GWS10045601JLX000)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas GWS10045601JLX000 Bulk 24 Weeks 5
    • 1 -
    • 10 $49.41
    • 100 $22.86
    • 1000 $22.28
    • 10000 $22.28
    Buy Now

    S10045 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SC-70-6

    Abstract: SiA813DJ-T1-GE3
    Contextual Info: New Product SiA813DJ Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Qg 0.094 at VGS = - 4.5 V ID (A)a - 4.5 0.131 at VGS = - 2.5 V - 4.5 4.9 nC 0.185 at VGS = - 1.8 V - 4.5 VDS (V) RDS(on) (Ω) - 20 • Halogen-free According to IEC 61249-2-21


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    sia813djsc-702002/95/ec18-jul-08+2sc-70-6sia813dj-t1-ge3 PDF

    Contextual Info: SiC414 Vishay Siliconix microBUCKTM SiC414 6 A, 28 V Integrated Buck Regulator with 5 V LDO DESCRIPTION FEATURES The Vishay Siliconix SiC414 is an advanced stand-alone synchronous buck regulator featuring integrated power MOSFETs, bootstrap diode, and an internal 5 V LDO in a


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    sic41418-jul-08 PDF

    S10011

    Abstract: S10045 S10046 S10035 S10110 S10063 S10071 S10100 S10090 S10115
    Contextual Info: S10000 Series Fixed Chip Inductors for Space Applications FEATURES Military QPL Approved. Pick-and-place compatible. SPECIFICATIONS Met the requirements of MIL-PRF83446 and MIL-STD-981, class S or class B. Class S parts are intended for critical flight and mission-essential ground


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    s10000mil-prf83446mil-std-981mil-std-202+10s10011s10045s10046s10035s10110s10063s10071s10100s10090s10115 PDF

    Si1302DL

    Abstract: SI1302DL-T1-E3 marking code
    Contextual Info: Si1302DL Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES RDS(on) (Ω) ID (A) 0.480 at VGS = 10 V 0.64 0.700 at VGS = - 4.5 V 0.53 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC


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    si1302dl2002/95/ecsc-70si1302dl-t1-e3+3si1302dl-t1-ge318-jul-08si1302dl-t1-e3 marking code PDF

    S10-0458-Rev

    Abstract: SI1050 SC-89 Si1050X SI1050X-T1-E3 si1050x-t1
    Contextual Info: Si1050X Vishay Siliconix N-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 RDS(on) (Ω) ID (A) 0.086 at VGS = 4.5 V 1.34a 0.093 at VGS = 2.5 V 1.29 0.102 at VGS = 1.8 V 1.23 0.120 at VGS = 1.5 V 0.7 Qg (Typ.) 7.1 • Halogen-free According to IEC 61249-2-21


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    si1050x2002/95/ecsc-89si1050x-t1-e3+5si1050x-t1-ge318-jul-08s10-0458-revsi1050si1050x-t1 PDF

    Contextual Info: New Product SiA813DJ Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Qg 0.094 at VGS = - 4.5 V ID (A)a - 4.5 0.131 at VGS = - 2.5 V - 4.5 4.9 nC 0.185 at VGS = - 1.8 V - 4.5 VDS (V) RDS(on) (Ω) - 20 • Halogen-free According to IEC 61249-2-21


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    sia813djsc-702002/95/ecsc-70-6+22011/65/eu12-mar-12 PDF

    Si4564DY

    Abstract: si4564 si4564dy-t1-ge3
    Contextual Info: Si4564DY Vishay Siliconix N- and P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 40 P-Channel - 40 ID (A)a Qg (Typ.) RDS(on) (Ω) 0.0175 at VGS = 10 V 10 0.020 at VGS = 4.5 V 9.2 0.021 at VGS = - 10 V - 9.2 0.028 at VGS = - 4.5 V - 7.4


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    si4564dy2002/95/ecsi4564dy-t1-ge318-jul-08+1si4564 PDF

    marking K2 mosfet

    Contextual Info: New Product SiA813DJ Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Qg 0.094 at VGS = - 4.5 V ID (A)a - 4.5 0.131 at VGS = - 2.5 V - 4.5 4.9 nC 0.185 at VGS = - 1.8 V - 4.5 VDS (V) RDS(on) (Ω) - 20 • Halogen-free According to IEC 61249-2-21


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    sia813djsc-702002/95/ecsc-70-6+211-mar-11marking k2 mosfet PDF

    Contextual Info: New Product SiA813DJ Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Qg 0.094 at VGS = - 4.5 V ID (A)a - 4.5 0.131 at VGS = - 2.5 V - 4.5 4.9 nC 0.185 at VGS = - 1.8 V - 4.5 VDS (V) RDS(on) (Ω) - 20 • Halogen-free According to IEC 61249-2-21


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    sia813djsc-702002/95/ec2011/65/eu+2js709a02-oct-12 PDF

    R6094 pmt divider circuit

    Abstract: Hamamatsu r6094 C9321CA-02 R4110U-74 AUTOMATIC STREET LIGHT CONTROLLER using IR sensor InGaas PIN photodiode chip back illuminated apd raman wafer 60g H9656 sensor x-ray
    Contextual Info: New CCD for Low-Light Scientific Applications High-Speed InGaAs APD + TIA ROSA Highly Sensitive Image Intensifier with Large Active Area Flat-Panel Sensor Product Line Extended The Improved Macro Imaging System AEQUORIA Imaging-Based Plate Reader FDSS for HighThroughput


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    31-novr6094 pmt divider circuithamamatsu r6094c9321ca-02+7r4110u-74automatic street light controller using ir sensoringaas pin photodiode chip back illuminatedapd ramanwafer 60gh9656sensor x-ray PDF

    Contextual Info: Si4564DY Vishay Siliconix N- and P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 40 P-Channel - 40 ID (A)a Qg (Typ.) RDS(on) (Ω) 0.0175 at VGS = 10 V 10 0.020 at VGS = 4.5 V 9.2 0.021 at VGS = - 10 V - 9.2 0.028 at VGS = - 4.5 V - 7.4


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    si4564dy2002/95/ecsi4564dy-t1-ge318-jul-08 PDF

    S10045

    Abstract: violet laser diode chip
    Contextual Info: Patent Pending PHOTODIODE Si PIN Photodiode S10044 For monitoring high-power red/infrared laser diode, surface mount type S10044 is a Si photodiode developed for accurately monitoring light output from a high-power red/infrared semiconductor laser diode. Its


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    s10044s5106s10045se-171+2kpin1076e02violet laser diode chip PDF

    Contextual Info: Patent Pending PHOTODIODE Si PIN Photodiode S10044 For monitoring high-power red/infrared laser diode, surface mount type S10044 is a Si photodiode developed for accurately monitoring light output from a high-power red/infrared semiconductor laser diode. Its


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    s10044s5106s10045se-171+1kpin1076e02 PDF

    S10045

    Contextual Info: PHOTODIODE Si PIN Photodiode S10044 For monitoring high-power red/infrared laser diode, surface mount type S10044 is a Si photodiode developed for accurately monitoring light output from a high-power red/infrared semiconductor laser diode. Its active area has a specially processed surface structure that maintains good photocurrent linearity up to an incident light level 10 times


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    s10044s5106s10045se-171+1kpin1076e02 PDF

    Contextual Info: Patent Pending PHOTODIODE Si PIN Photodiode S10044 For monitoring high-power laser diode, surface mount type S10044 is a Si photodiode developed for accurately monitoring light output from a high-power semiconductor laser diode. Its active area has a specially processed surface structure that maintains good photocurrent linearity up to an incident light level 10 times higher than that


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    s10044s5106s10045se-171+1kpin1076e01 PDF