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    SI1050X Search Results

    SI1050X Datasheets (3)

    Vishay Siliconix
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SI1050X
    Vishay Siliconix N-Channel 8-V (D-S) MOSFET Original PDF 122.11KB 6
    SI1050X-T1-E3
    Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 8V 1.34A SOT563F Original PDF 8
    SI1050X-T1-GE3
    Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 8V 1.34A SC-89-6 Original PDF 8
    SF Impression Pixel

    SI1050X Price and Stock

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    Vishay Intertechnologies SI1050X-T1-GE3

    Mosfet, N-Ch, 8V, 1.34A, Sc-89; |Vishay SI1050X-T1-GE3
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    Newark SI1050X-T1-GE3 Tape & Reel 3,000
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    Flip Electronics SI1050X-T1-GE3 81,000
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    Vishay Siliconix SI1050X-T1-GE3

    SI1050X-T1-GE3 N-CHANNEL MOSFET TRANSISTOR, 1.34 A, 8 V, 6-PIN SC-89
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    RS SI1050X-T1-GE3 Bulk 20
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    Vishay Huntington SI1050X-T1-GE3

    MOSFET N-CH 8V 1.34A SC-89-6
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics SI1050X-T1-GE3 21,000
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    SI1050X Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Si1050X Vishay Siliconix N-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 RDS(on) () ID (A) 0.086 at VGS = 4.5 V 1.34a 0.093 at VGS = 2.5 V 1.29 0.102 at VGS = 1.8 V 1.23 0.120 at VGS = 1.5 V 0.7 Qg (Typ.) 7.1 • Halogen-free According to IEC 61249-2-21


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    si1050x2002/95/ecsc-89si1050x-t1-ge3+32011/65/eujs709a02-oct-12 PDF

    Si1050X

    Contextual Info: SPICE Device Model Si1050X Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


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    si1050xs-70961rev14-may-07 PDF

    SI1050X-T1

    Abstract: SC-89 Si1050X Si1050
    Contextual Info: Si1050X Vishay Siliconix N-Channel 8-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 RDS(on) (Ω) ID (A) 0.086 at VGS = 4.5 V 1.34a 0.093 at VGS = 2.5 V 1.29 Qg (Typ.) 1.23 0.120 at VGS = 1.5 V 0.7 RoHS COMPLIANT 7.1 0.102 at VGS = 1.8 V • Halogen-free Option Available


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    si1050xsc-89si1050x-t1-e3si1050x-t1-ge3+318-jul-08si1050x-t1si1050 PDF

    Contextual Info: SPICE Device Model Si1050X www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


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    si1050x2002/95/ec2011/65/eujs709a+102-oct-12 PDF

    Contextual Info: Si1050X Vishay Siliconix N-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 RDS(on) () ID (A) 0.086 at VGS = 4.5 V 1.34a 0.093 at VGS = 2.5 V 1.29 0.102 at VGS = 1.8 V 1.23 0.120 at VGS = 1.5 V 0.7 Qg (Typ.) 7.1 • Halogen-free According to IEC 61249-2-21


    Original
    si1050x2002/95/ecsc-89si1050x-t1-ge3+118-jul-08 PDF

    S10-0458-Rev

    Abstract: SI1050 SC-89 Si1050X SI1050X-T1-E3 si1050x-t1
    Contextual Info: Si1050X Vishay Siliconix N-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 RDS(on) (Ω) ID (A) 0.086 at VGS = 4.5 V 1.34a 0.093 at VGS = 2.5 V 1.29 0.102 at VGS = 1.8 V 1.23 0.120 at VGS = 1.5 V 0.7 Qg (Typ.) 7.1 • Halogen-free According to IEC 61249-2-21


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    si1050x2002/95/ecsc-89si1050x-t1-e3+5si1050x-t1-ge318-jul-08s10-0458-revsi1050si1050x-t1 PDF

    Contextual Info: Si1050X Vishay Siliconix N-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 RDS(on) () ID (A) 0.086 at VGS = 4.5 V 1.34a 0.093 at VGS = 2.5 V 1.29 0.102 at VGS = 1.8 V 1.23 0.120 at VGS = 1.5 V 0.7 Qg (Typ.) 7.1 • Halogen-free According to IEC 61249-2-21


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    si1050x2002/95/ecsc-89si1050x-t1-ge3+32011/65/eujs709a02-oct-12 PDF

    SC-89

    Abstract: Si1050X
    Contextual Info: Si1050X Vishay Siliconix N-Channel 8-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 RDS(on) (Ω) ID (A) 0.086 at VGS = 4.5 V 1.34a 0.093 at VGS = 2.5 V 1.29 Qg (Typ.) 1.23 0.120 at VGS = 1.5 V 0.7 RoHS COMPLIANT 7.1 0.102 at VGS = 1.8 V • Halogen-free Option Available


    Original
    si1050xsc-89si1050x-t1-e3si1050x-t1-ge3+108-apr-05 PDF

    Contextual Info: Si1050X Vishay Siliconix N-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 RDS(on) () ID (A) 0.086 at VGS = 4.5 V 1.34a 0.093 at VGS = 2.5 V 1.29 0.102 at VGS = 1.8 V 1.23 0.120 at VGS = 1.5 V 0.7 Qg (Typ.) 7.1 • Halogen-free According to IEC 61249-2-21


    Original
    si1050x2002/95/ecsc-89si1050x-t1-ge3+22011/65/eu12-mar-12 PDF

    SI1050

    Abstract: Si1050X
    Contextual Info: SPICE Device Model Si1050X Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


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    si1050x18-jul-08si1050 PDF

    5622

    Abstract: AN609 Si1050X pspice
    Contextual Info: Si1050X_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


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    si1050xan60908-may-075622+1pspice PDF

    SC-89

    Abstract: Si1050X
    Contextual Info: Si1050X Vishay Siliconix N-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 RDS(on) () ID (A) 0.086 at VGS = 4.5 V 1.34a 0.093 at VGS = 2.5 V 1.29 0.102 at VGS = 1.8 V 1.23 0.120 at VGS = 1.5 V 0.7 Qg (Typ.) 7.1 • Halogen-free According to IEC 61249-2-21


    Original
    si1050x2002/95/ecsc-89si1050x-t1-ge3+111-mar-11 PDF

    Si1050X

    Abstract: SC-89 61-287
    Contextual Info: Si1050X Vishay Siliconix New Product N-Channel 8-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 rDS(on) (Ω) ID (A) 0.086 at VGS = 4.5 V 1.34a 0.093 at VGS = 2.5 V 1.29 0.102 at VGS = 1.8 V 1.23 0.120 at VGS = 1.5 V 0.7 • TrenchFET Power MOSFET • 100 % Rg Tested


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    si1050xsc-89si1050x-t1-e308-apr-05+161-287 PDF

    Contextual Info: Si1050X Vishay Siliconix N-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 RDS(on) () ID (A) 0.086 at VGS = 4.5 V 1.34a 0.093 at VGS = 2.5 V 1.29 0.102 at VGS = 1.8 V 1.23 0.120 at VGS = 1.5 V 0.7 Qg (Typ.) 7.1 • Halogen-free According to IEC 61249-2-21


    Original
    si1050x2002/95/ecsc-89si1050x-t1-ge3+22011/65/eu12-mar-12 PDF

    BS250KL-TR1-E3

    Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
    Contextual Info: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8


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    si3865bdv-t1-e3ct-ndsi4720cy-t1-e3ct-ndsi6924aedq-t1-e3ct-ndsi1040x-t1-e3tr-nd+16si1865dl-t1-e3tr-ndsi1869dh-t1-e3tr-ndsi3861bdv-t1-e3tr-ndsi3865bdv-t1-e3tr-ndsi4720cy-t1-e3tr-ndsi6924aedq-t1-e3tr-ndbs250kl-tr1-e3si6435adq-t1-e3tp0610klsi9435bdy-t1-e3ctsi6467bdq-t1-e3si1024x-t1-e3si5855dc-t1-e3sia411dj-t1-e3sum110p06-07l-e3 d2paksi1903dl-t1-e3 PDF

    Arduino Mega2560

    Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
    Contextual Info: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM


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    cy8c38cy8c29incl79512t9797+1612t980412t980312t980012t980212t980112t9805arduino mega256013001 s 6d transistorarduino uno rev 3agilent optical encoder 9988mz 13001 transistorarduino mega 2650skiip 613 gb 123 ctarduino sound sensor module picarduino nanomc34063l PDF

    GS 069

    Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
    Contextual Info: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no


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    si9165si9169600-matssop-20+12msop-10sip1759gs 069si5902dc spice device modeltsop6 marking 312sc89-6si7705dnsi7100dnsi3865bdvsi5947dusi3861bdv1212-8 PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


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    mediu33-4-9337-2727vmn-sg2127-1210si7121si4914b+8si-4102si4599si4483asir166irfd120si7949si4459asir836 PDF

    220v AC voltage stabilizer schematic diagram

    Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
    Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585


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    ad9272p462-ndlng295lfcp2up463-nd+11lng395mftp5u220v ac voltage stabilizer schematic diagramlg color tv circuit diagram tda 93701000w inverter pure sine wave schematic diagramschematic diagram atx power supply 500wtv sharp ic tda 9381 pscircuit diagram wireless spy camera9744 mini mainboard v1.2sony 279-87transistor e 13005-2superpro lx PDF

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Contextual Info: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


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    diod92vmn-sg2127-0911diode sot-23 marking 15dsi4210+8si4812bsi-4102si7149dpsim400si4932si7135sib914si4477 PDF

    gs 069

    Abstract: PowerPACK 1212-8 Si4946BEY Si2314EDS SI4430BDY tsop6 marking 345 TN2404K 1206-8 chipfet layout Si4630DY SUM110N04-04
    Contextual Info: N-Channel Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no


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    sc-75sc-75asc-89gs 069+9powerpack 1212-8si4946beysi2314edssi4430bdytsop6 marking 345tn2404k1206-8 chipfet layoutsi4630dysum110n04-04 PDF

    SC-89-6

    Abstract: SiB914
    Contextual Info: Power mosfets O n - Re sista nce Rating s at V GS = 1. 2 V S M O S F E ts Key Benefits • Optimized for use with the low-voltage core ICs in portable electronics systems • Allow the driver voltage to turn on the switch from a lower output voltage than 1.8 V, reducing the need for level shift circuitry


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    vmn-pt0103-0802sc-89-6sib914 PDF