S10063 Search Results
S10063 Price and Stock
PRECI-DIP SSA 813-S1-006-30-017191CONN SPRING PISTON 6POS SMD | 
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
 
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813-S1-006-30-017191 | Digi-Reel | 3,278 | 1 | 
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813-S1-006-30-017191 | 174 | 
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813-S1-006-30-017191 | Reel | 1,200 | 600 | 
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813-S1-006-30-017191 | Reel | 20 Weeks | 600 | 
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TDK Corporation FS1006-3300-ALTDK MPOL POWER MODULE, 3.3V | 
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
 
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FS1006-3300-AL | Digi-Reel | 2,566 | 1 | 
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FS1006-3300-AL | Reel | 12 Weeks | 3,000 | 
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FS1006-3300-AL | 2,340 | 
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PRECI-DIP SSA 813-S1-006-30-017101CONN SPRING PISTON 6POS SMD | 
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813-S1-006-30-017101 | Bulk | 697 | 1 | 
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813-S1-006-30-017101 | 180 | 
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PRECI-DIP SSA 811-S1-006-30-016101CONN SPRING PISTON 6POS SMD | 
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811-S1-006-30-016101 | Bulk | 412 | 1 | 
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811-S1-006-30-016101 | 20 Weeks | 220 | 
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PRECI-DIP SSA 823-S1-006-30-014101CONN SPRING PISTON 6POS SMD | 
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823-S1-006-30-014101 | Bulk | 100 | 1 | 
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823-S1-006-30-014101 | 484 | 
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S10063 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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 Contextual Info: New Product Si4497DY Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.0033 at VGS = - 10 V - 36 0.0046 at VGS = - 4.5 V - 29 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET  | 
 Original  | 
Si4497DY 2002/95/EC Si4497DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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 Contextual Info: New Product SiR800DP Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0023 at VGS = 10 V 50 0.0026 at VGS = 4.5 V 50 0.0034 at VGS = 2.5 V 50 VDS (V) 20 Qg (Typ.) 41 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21  | 
 Original  | 
SiR800DP 2002/95/EC SiR800DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
S10011
Abstract: S10045 S10046 S10035 S10110 S10063 S10071 S10100 S10090 S10115 
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 Original  | 
S10000 MIL-PRF83446 MIL-STD-981, MIL-STD-202, S10011 S10045 S10046 S10035 S10110 S10063 S10071 S10100 S10090 S10115 | |
si4497
Abstract: Si4497DY 
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 Original  | 
Si4497DY 2002/95/EC Si4497DY-T1-GE3 18-Jul-08 si4497 | |
SiS407DNContextual Info: New Product SiS407DN Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e, f 0.0102 at VGS = - 4.5 V - 25 0.0138 at VGS = - 2.5 V - 25 0.0195 at VGS = - 1.8 V - 25 VDS (V) - 20 Qg (Typ.) 38 nC PowerPAK 1212-8 S 3.30 mm  | 
 Original  | 
SiS407DN 2002/95/EC 18-Jul-08 | |
SIR804DP
Abstract: sir804dp-t1-ge3 
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 Original  | 
SiR804DP 2002/95/EC SiR804DP-T1-GE3 18-Jul-08 | |
SiR880DPContextual Info: New Product SiR880DP Vishay Siliconix N-Channel 80 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0059 at VGS = 10 V 60 0.0067 at VGS = 7.5 V 60 0.0085 at VGS = 4.5 V 60 VDS (V) 80 Qg (Typ.) 23 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21  | 
 Original  | 
SiR880DP 2002/95/EC SiR880DP-T1-GE3 18-Jul-08 | |
SUD09P10-195
Abstract: SUD09P10 
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 Original  | 
SUD09P10-195 2002/95/EC O-252 SUD09P10-195-GE3 18-Jul-08 SUD09P10-195 SUD09P10 | |
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 Contextual Info: New Product Si7625DN Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.007 at VGS = - 10 V - 35d 0.011 at VGS = - 4.5 V - 35d - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET  | 
 Original  | 
Si7625DN 2002/95/EC Si7625DN-T1-GE3 18-Jul-08 | |
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 Contextual Info: New Product SiR800DP Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0023 at VGS = 10 V 50 0.0026 at VGS = 4.5 V 50 0.0034 at VGS = 2.5 V 50 VDS (V) 20 Qg (Typ.) 41 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21  | 
 Original  | 
SiR800DP 2002/95/EC SiR800DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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 Contextual Info: SUP90N04-3m3P Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.0033 at VGS = 10 V 90 0.0041 at VGS = 4.5 V 90 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested  | 
 Original  | 
SUP90N04-3m3P 2002/95/EC O-220AB SUP90N04-3m3P-GE3 18-Jul-08 | |
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 Contextual Info: SUD09P10-195 Vishay Siliconix P-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 100 ID (A) 0.195 at VGS = - 10 V - 8.8 0.210 at VGS = - 4.5 V - 8.5 Qg (Typ.) 11.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET  | 
 Original  | 
SUD09P10-195 2002/95/EC O-252 SUD09P10-195-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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 Contextual Info: New Product Si7625DN Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.007 at VGS = - 10 V - 35d 0.011 at VGS = - 4.5 V - 35d - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET  | 
 Original  | 
Si7625DN 2002/95/EC Si7625DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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 Contextual Info: New Product Si7625DN Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.007 at VGS = - 10 V - 35d 0.011 at VGS = - 4.5 V - 35d - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET  | 
 Original  | 
Si7625DN 2002/95/EC Si7625DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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SiR800DPContextual Info: New Product SiR800DP Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0023 at VGS = 10 V 50 0.0026 at VGS = 4.5 V 50 0.0034 at VGS = 2.5 V 50 VDS (V) 20 Qg (Typ.) 41 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21  | 
 Original  | 
SiR800DP 2002/95/EC SiR800DP-T1-GE3 18-Jul-08 | |
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 Contextual Info: SUD09P10-195 Vishay Siliconix P-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 100 ID (A) 0.195 at VGS = - 10 V - 8.8 0.210 at VGS = - 4.5 V - 8.5 Qg (Typ.) 11.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET  | 
 Original  | 
SUD09P10-195 2002/95/EC O-252 SUD09P10-195-GE3 18-Jul-08 | |
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 Contextual Info: New Product Si4497DY Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.0033 at VGS = - 10 V - 36 0.0046 at VGS = - 4.5 V - 29 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET  | 
 Original  | 
Si4497DY 2002/95/EC Si4497DY-T1-GE3 18-Jul-08 | |
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 Contextual Info: New Product SiR800DP Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0023 at VGS = 10 V 50 0.0026 at VGS = 4.5 V 50 0.0034 at VGS = 2.5 V 50 VDS (V) 20 Qg (Typ.) 41 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21  | 
 Original  | 
SiR800DP 2002/95/EC SiR800DP-T1-GE3 18-Jul-08 | |