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    SIS407DN Search Results

    SIS407DN Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SIS407DN-T1-GE3
    		Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 25A 1212-8 PPAK Original PDF 13
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    Vishay Siliconix SIS407DN-T1-GE3

    MOSFET P-CH 20V 25A PPAK1212-8
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    DigiKey () SIS407DN-T1-GE3 Digi-Reel 37,611 1
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    SIS407DN-T1-GE3 Cut Tape 37,611 1
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    SIS407DN-T1-GE3 Reel 36,000 3,000
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    New Advantage Corporation SIS407DN-T1-GE3 6,000 1
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    Vishay Intertechnologies SIS407DN-T1-GE3

    Power MOSFET, P Channel, 20 V, 25 A, 0.0082 ohm, PowerPAK 1212, Surface Mount - Tape and Reel (Alt: SIS407DN-T1-GE3)
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    Avnet Americas SIS407DN-T1-GE3 Reel 19 Weeks 3,000
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    Mouser Electronics SIS407DN-T1-GE3 27,334
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    Newark SIS407DN-T1-GE3 Bulk 9,806 1
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    TTI SIS407DN-T1-GE3 Reel 12,000 3,000
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    TME SIS407DN-T1-GE3 1
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    Avnet Asia SIS407DN-T1-GE3 6,000 21 Weeks 3,000
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    EBV Elektronik SIS407DN-T1-GE3 20 Weeks 3,000
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    Maritex SIS407DN-T1-GE3 66,590 1
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    Vishay Huntington SIS407DN-T1-GE3

    MOSFET P-CH 20V 25A 1212-8 PPAK / Trans MOSFET P-CH 20V 25A 8-Pin PowerPAK 1212 T/R
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    Win Source Electronics SIS407DN-T1-GE3 64,755
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    SIS407DN Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SiS407DN

    Contextual Info: New Product SiS407DN Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e, f 0.0102 at VGS = - 4.5 V - 25 0.0138 at VGS = - 2.5 V - 25 0.0195 at VGS = - 1.8 V - 25 VDS (V) - 20 Qg (Typ.) 38 nC PowerPAK 1212-8 S 3.30 mm


    Original     		SiS407DN 2002/95/EC 18-Jul-08 PDF

    SiS407DN

    Contextual Info: New Product SiS407DN Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)e, f 0.0095 at VGS = - 4.5 V - 25 0.0138 at VGS = - 2.5 V - 25 0.0195 at VGS = - 1.8 V - 25 VDS (V) - 20 Qg (Typ.) 38 nC PowerPAK 1212-8 S 3.30 mm


    Original     		SiS407DN 2002/95/EC SiS407DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: SPICE Device Model SiS407DN Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		SiS407DN 18-Jul-08 PDF

    Contextual Info: New Product SiS407DN Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)e, f 0.0095 at VGS = - 4.5 V - 25 0.0138 at VGS = - 2.5 V - 25 0.0195 at VGS = - 1.8 V - 25 VDS (V) - 20 Qg (Typ.) 38 nC PowerPAK 1212-8 S 3.30 mm


    Original     		SiS407DN 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: New Product SiS407DN Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)e, f 0.0095 at VGS = - 4.5 V - 25 0.0138 at VGS = - 2.5 V - 25 0.0195 at VGS = - 1.8 V - 25 VDS (V) - 20 Qg (Typ.) 38 nC PowerPAK 1212-8 S 3.30 mm


    Original     		SiS407DN 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    MAR 747

    Abstract: 5218 m 5672 AN609
    Contextual Info: SiS407DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		SiS407DN AN609, 12-Mar-10 MAR 747 5218 m 5672 AN609 PDF

    Contextual Info: SPICE Device Model SiS407DN www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		SiS407DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: New Product SiS407DN Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)e, f 0.0095 at VGS = - 4.5 V - 25 0.0138 at VGS = - 2.5 V - 25 0.0195 at VGS = - 1.8 V - 25 VDS (V) - 20 Qg (Typ.) 38 nC PowerPAK 1212-8 S 3.30 mm


    Original     		SiS407DN 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    SIS407DN

    Contextual Info: New Product SiS407DN Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)e, f 0.0095 at VGS = - 4.5 V - 25 0.0138 at VGS = - 2.5 V - 25 0.0195 at VGS = - 1.8 V - 25 VDS (V) - 20 Qg (Typ.) 38 nC PowerPAK 1212-8 S 3.30 mm


    Original     		SiS407DN 2002/95/EC SiS407DN-T1-GE3 18-Jul-08 PDF

    Contextual Info: New Product SiS407DN Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)e, f 0.0095 at VGS = - 4.5 V - 25 0.0138 at VGS = - 2.5 V - 25 0.0195 at VGS = - 1.8 V - 25 VDS (V) - 20 Qg (Typ.) 38 nC PowerPAK 1212-8 S 3.30 mm


    Original     		SiS407DN 2002/95/EC SiS407DN-T1-GE3 11-Mar-11 PDF

    acs712elctr05bt

    Contextual Info: VISHAY BCCOMPONENTS www.vishay.com Aluminum Capacitors Technical Note Power Management Solution Integrated Supercapacitor Charger By Gerald Tatschl MAL219699001E3 ENYCAPTM Capacitance Range: 1 F to 100 F Voltage Range: 2.3 V to 3.2 V 4 W Backup Power When Input Fails


    Original     		MAL219699001E3 MAL219699001E3 LTC33555. 03-Dec-14 acs712elctr05bt PDF

    Contextual Info: LT8584 2.5A Monolithic Active Cell Balancer with Telemetry Interface Description Features 2.5A Typical Average Cell Discharge Current n Integrated 6A, 50V Power Switch n Integrates Seamlessly with LTC680x Family: No Additional Software Required n Selectable Current and Temperature Monitors


    Original     		LT8584 LTC680x 16-Lead LTC6802, LTC6803, LTC6804 TA03a LTC3300-1 48-Lead LTC6803 PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 PDF

    SI7615A

    Abstract: LTC6802-1
    Contextual Info: LT8584 2.5A Monolithic Active Cell Balancer with Telemetry Interface Description Features 2.5A Typical Average Cell Discharge Current n Integrated 6A, 50V Power Switch n Integrates Seamlessly with LTC680x Family: No Additional Software Required n Selectable Current and Temperature Monitors


    Original     		LT8584 LTC680x 16-Lead C3300-1 48-Lead LTC6802-1 SSOP-44 LTC6803-1/ LTC6803-3 SI7615A LTC6802-1 PDF