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    SI7143 Datasheets (1)

    Vishay Siliconix
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SI7143DP-T1-GE3
    		Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 35A 8-SOIC Original PDF 7
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    SI7143 Price and Stock

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    Vishay Intertechnologies SI7143DP-T1-GE3

    Trans MOSFET P-CH 30V 35A 8-Pin PowerPAK SO EP T/R
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    Verical () SI7143DP-T1-GE3 6,000 3,000
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    SI7143DP-T1-GE3 2,725 3
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    Avnet Americas SI7143DP-T1-GE3 Tape & Reel 52 Weeks 3,000
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    Mouser Electronics SI7143DP-T1-GE3 28,845
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    Arrow Electronics () SI7143DP-T1-GE3 6,000 52 Weeks 3,000
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    SI7143DP-T1-GE3 Cut Strips 2,725 1
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    Vishay Huntington SI7143DP-T1-GE3

    MOSFET P-CH 30V 35A PPAK SO-8
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    Win Source Electronics SI7143DP-T1-GE3 30,000
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    SI7143 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Si7143DP

    Abstract: 26 258
    Contextual Info: SPICE Device Model Si7143DP Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		si7143dp18-jul-0826 258 PDF

    SI7143DP-T1-GE3

    Abstract: Si7143DP si7143
    Contextual Info: New Product Si7143DP Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e,f 0.0100 at VGS = - 10 V - 35 0.0186 at VGS = - 4.5V - 35 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		si7143dp2002/95/ecsi7143dp-t1-ge318-jul-08+1si7143 PDF

    Contextual Info: New Product Si7143DP Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e,f 0.0100 at VGS = - 10 V - 35 0.0186 at VGS = - 4.5V - 35 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		si7143dp2002/95/ec18-jul-08 PDF

    Contextual Info: SPICE Device Model Si7143DP www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		si7143dp2002/95/ec2011/65/eujs709a+102-oct-12 PDF

    6-5910

    Abstract: 7106 is 3063 AN609 Si7143DP
    Contextual Info: Si7143DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		si7143dpan60908-feb-106-5910+27106is 3063 PDF

    Contextual Info: New Product Si7143DP Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e,f 0.0100 at VGS = - 10 V - 35 0.0186 at VGS = - 4.5V - 35 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		si7143dp2002/95/ec2011/65/eujs709a+102-oct-12 PDF

    Contextual Info: New Product Si7143DP Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e,f 0.0100 at VGS = - 10 V - 35 0.0186 at VGS = - 4.5V - 35 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		si7143dp2002/95/ec2011/65/eujs709a+102-oct-12 PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		mediu33-4-9337-2727vmn-sg2127-1210si7121si4914b+8si-4102si4599si4483asir166irfd120si7949si4459asir836 PDF