SI84 Search Results

UP78

Abstract: Aaa SMD MARKING
Contextual Info: Si8401DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.065 at VGS = - 4.5 V - 4.9 0.095 at VGS = - 2.5 V - 4.1 • TrenchFET Power MOSFET • MICRO FOOT® Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and

Si8483DB

Abstract: Si8483DB-T2-E1 si8483
Contextual Info: Si8483DB Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) (Max.) ID (A)e 0.026 at VGS = - 4.5 V - 16 0.035 at VGS = - 2.5 V - 16 0.055 at VGS = - 1.8 V - 13 0.092 at VGS = - 1.5 V - 2.5 VDS (V) - 12 Qg (Typ.) 21 nC APPLICATIONS

Si8422

Abstract: SI8422BD KobiConn Si8420 si8420bd SI8400AB si8442bb high speed opto isolator digital galvanic isolator SI8442BB-C-IS
Contextual Info: Si84xxISO-EVB UG Si84 XX ISO E VALUATION B OAR D U SER ’ S G UIDE 1. Introduction The Si84xxISO evaluation board allows designers to evaluate Silicon Lab's family of CMOS ultra-low-power isolators. These isolators are CMOS devices employing RF coupler technology to transmit digital information

mosfet 2891

Contextual Info: SPICE Device Model Si8499DB Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: Si8473EDB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () - 20 ID (A)a, e 0.041 at VGS = - 4.5 V - 7.1 0.055 at VGS = - 2.5 V - 6.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: Si8416DB_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter

si8489

Contextual Info: Si8489EDB Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY RDS(on) () Max. ID (A)a, e 0.044 at VGS = - 10 V - 5.4 0.054 at VGS = - 4.5 V - 4.9 0.082 at VGS = - 2.5 V - 3.9 VDS (V) - 20 Qg (Typ.) 9.5 nC • Material categorization:

si8406

Contextual Info: Si8406DB Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () Max. ID (A) 0.033 at VGS = 4.5 V 16e 0.037 at VGS = 2.5 V 16e 0.042 at VGS = 1.8 V 15 Qg (Typ.) 7.5 nC MICRO FOOT Bump Side View S • Load Switch • Battery Management

Contextual Info: Si8469DB_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

Si8421A

Abstract: Si8420B Si8421B Si8410B Si8410 Si8420 Si8421 VDE0884 SI8420-B-IS Si8420-B
Contextual Info: Si8410/20/21 S INGLE A N D D UAL -C HANNEL D IGITAL I SOLATORS Features High-speed operation Pin Assignments 2500 VRMS isolation DC – 150 Mbps Narrow Body SOIC Transient Immunity Low propagation delay >25 kV/µs <10 ns DC correct No start-up initialization required

Si8420

Abstract: Si8410 Si8421 VDE0884 SI8410-C-IS
Contextual Info: Si8410/20/21 S INGLE & D UAL - C HANNEL D IGITAL I SOLATORS Features High-speed operation Pin Assignments 2500 VRMS isolation DC – 150 Mbps Narrow Body SOIC Transient Immunity Low propagation delay >25 kV/µs <10 ns DC correct No start-up initialization required

Contextual Info: Si8461DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 20 ID (A)a, e 0.100 at VGS = - 4.5 V - 3.7 0.118 at VGS = - 2.5 V - 3.4 0.140 at VGS = - 1.8 V - 3.1 0.205 at VGS = - 1.5 V -2 Qg (Typ.) 9.5 nC • Halogen-free According to IEC 61249-2-21

Si3443DV

Abstract: Si8401DB Si8401DB-T1-E1
Contextual Info: Si8401DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.065 at VGS = - 4.5 V - 4.9 0.095 at VGS = - 2.5 V - 4.1 • TrenchFET Power MOSFET • MICRO FOOT® Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and

Si8400

Abstract: SOIC127P600X173-8N AN375 SOIC-16 VDE0884 Si8400AA-A-IS SI8405AA-B-IS1
Contextual Info: Si840x B IDIRECTIONAL I 2 C I SOLA TORS WITH U NIDIRECTIONAL D IGITA L C HANNELS Features  Independent, bidirectional SDA and SCL isolation channels Open drain outputs with 35 mA sink current  60-year life at rated working voltage  High electromagnetic immunity

Contextual Info: Si8435DB Vishay Siliconix New Product P-Channel 1.5-V G-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.041 at VGS = - 4.5 V - 10.0 VDS (V) - 20 0.048 at VGS = - 2.5 V - 9.32 0.058 at VGS = - 1.8 V - 8.48 0.075 at VGS = - 1.5 V - 7.45 Qg (Typ) • TrenchFET Power MOSFET

8205 datasheet

Abstract: 8205 A 9583 AN609 si84
Contextual Info: Si8465DB_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

S-82023

Abstract: Si8445DB
Contextual Info: SPICE Device Model Si8445DB Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

65420

Contextual Info: SPICE Device Model Si8461DB Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

A8483

Contextual Info: Si8483DB Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 e RDS(on) () (Max.) ID (A) 0.026 at VGS = - 4.5 V - 16 0.035 at VGS = - 2.5 V - 16 0.055 at VGS = - 1.8 V - 13 0.092 at VGS = - 1.5 V - 2.5 Qg (Typ.) 21 nC S • Load Switch for Smart Phones, Tablet PCs, and Mobile

Contextual Info: SPICE Device Model Si8473EDB Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Si8441

Abstract: RF transmitter and receiver Si8440 Si8442 SOIC-16 VDE0805 VDE0884 SI8440-C-IS Si8441C Si8440C
Contextual Info: Si8440/1/2 Q U A D -C H A N N E L D I G I TA L I S O L A T O R Features Pin Assignments High-speed operation: DC – 150 Mbps Low propagation delay: <10 ns Wide Operating Supply Voltage: 2.375–5.5 V Low power: I1 + I2 < 12 mA/channel at 100 Mbps Precise timing:

Contextual Info: Si8410/20/21 5 kV Si8422/23 (2.5 & 5 kV) L O W - P OWER, S INGLE AND D U A L - C HANNEL D IGITA L I S O L A T O R S Features  High-speed operation DC to 150 Mbps  No start-up initialization required  Wide Operating Supply Voltage: 2.6–5.5 V

Si8409DB

Contextual Info: SPICE Device Model Si8409DB Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

si8473

Contextual Info: Si8473EDB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 20 ID (A)a, e 0.041 at VGS = - 4.5 V - 7.1 0.055 at VGS = - 2.5 V - 6.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET