SI8489EDB Search Results

si8489

Contextual Info: Si8489EDB Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY RDS(on) () Max. ID (A)a, e 0.044 at VGS = - 10 V - 5.4 0.054 at VGS = - 4.5 V - 4.9 0.082 at VGS = - 2.5 V - 3.9 VDS (V) - 20 Qg (Typ.) 9.5 nC • Material categorization:

S1217

Contextual Info: Si8489EDB Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY RDS(on) () Max. ID (A)a, e 0.044 at VGS = - 10 V - 5.4 0.054 at VGS = - 4.5 V - 4.9 0.082 at VGS = - 2.5 V - 3.9 VDS (V) - 20 Qg (Typ.) 9.5 nC • Material categorization:

Contextual Info: Si8489EDB www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -20 RDS(on) (Ω) MAX. ID (A) a, e 0.044 at VGS = -10 V -5.4 0.054 at VGS = -4.5 V -4.9 0.082 at VGS = -2.5 V -3.9 Qg (TYP.) 9.5 nC 1 x xxx xx x m m 1 • Small 1 mm x 1 mm max. outline area

SI-8100D

Abstract: Si8409DB Si8461 si8466 SI8425 si8812 si8802 SI8466EDB si8489 Si8100DB
Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - World’s Smallest Chipscale MOSFETs AND TEC I INNOVAT O L OGY MICRO FOOT N HN POWER MOSFETs O 19 62-2012 World’s Smallest Chipscale MOSFETs KEY BENEFITS • Smallest MOSFET footprints of 0.8 mm x 0.8 mm, 1 mm x 1 mm, 1.2 mm x 1 mm,

Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET TrenchFET Gen III - P-Channel Breakthrough P-Channel Technology Dramatically Cuts RDS on KEY BENEFITS • Lowest on-resistance per area achieved for a p-channel MOSFET: down to half of

Contextual Info: Vishay Intertechnology, Inc. P-CHANNEL GEN III MOSFETs PowerPAK Thermally Enhanced, High Current Handling Capability LITTLE FOOT® Wide Range of Battery Operated Applications MICRO FOOT® Best RDS on per Outline Area DUAL P-CHANNELS Thermally Enhanced,

Si7141

Abstract: SiA447DJ SI7615A
Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET AND TEC I INNOVAT O L OGY TrenchFET Gen III - P-Channel N HN POWER MOSFETs O 19 62-2012 Breakthrough P-Channel Technology Dramatically Cuts RDS on

Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - Extremely Small Chipscale MOSFETs MICRO FOOT Extremely Small Chipscale MOSFETs KEY BENEFITS • Small MOSFET footprints of 0.8 mm x 0.8 mm, 1 mm x 1 mm, 1.2 mm x 1 mm, 1.5 mm x 1 mm, and 2.4 mm x 2 mm