SI8406 Search Results
SI8406 Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SI8406DB-T2-E1 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 16A MICROFOOT | Original | 9 | |||
| SI-8406L | Sanken Electric | Switching Regulator IC with Coil | Original | 71.08KB | 6 |
SI8406 Price and Stock
Vishay Intertechnologies SI8406DB-T2-E1Trans MOSFET N-CH 20V 16A 6-Pin Micro Foot T/R |
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SI8406DB-T2-E1 | 326 | 31 |
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SI8406DB-T2-E1 | Tape & Reel | 52 Weeks | 3,000 |
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SI8406DB-T2-E1 | 24 |
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SI8406DB-T2-E1 | Cut Strips | 326 | 52 Weeks | 1 |
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SI8406DB-T2-E1 | Bulk | 1 |
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SI8406DB-T2-E1 | Reel | 3,000 |
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SI8406DB-T2-E1 | 54 Weeks | 3,000 |
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SI8406DB-T2-E1 | 53 Weeks | 3,000 |
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SI8406 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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si8406Contextual Info: Si8406DB Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () Max. ID (A) 0.033 at VGS = 4.5 V 16e 0.037 at VGS = 2.5 V 16e 0.042 at VGS = 1.8 V 15 Qg (Typ.) 7.5 nC MICRO FOOT Bump Side View S • Load Switch • Battery Management |
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si8406dbsi8406db-t2-e12011/65/eu2002/95/ec+2 | |
SI8406DBContextual Info: SPICE Device Model Si8406DB www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C |
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si8406db2002/95/ec2011/65/eujs709a+1 | |
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Contextual Info: Si8406DB_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
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si8406dban6093904u7041m+6 | |
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Contextual Info: Si8406DB Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () Max. ID (A) 0.033 at VGS = 4.5 V 16e 0.037 at VGS = 2.5 V 16e 0.042 at VGS = 1.8 V 15 Qg (Typ.) 7.5 nC MICRO FOOT Bump Side View S • Load Switch • Battery Management |
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si8406db2002/95/ec2011/65/eujs709a+1 | |
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Contextual Info: Si8406DB www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () MAX. ID (A) 0.033 at VGS = 4.5 V 16 e 0.037 at VGS = 2.5 V 16 e 0.042 at VGS = 1.8 V 15 MICRO FOOT 1.5 x 1 x xxx xx x 1 m m S 3 D 4 Qg (TYP.) |
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si8406db2002/95/ec2011/65/eujs709a+1 | |
fn651
Abstract: CTB-34D 2SC5586 hvr-1x7 STR20012 sap17n 2sd2619 RBV-4156B SLA4037 2sk1343
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2sa7442sa7452sa7462sa747+16 | |
SI-8500L
Abstract: SI-8403L SI-8406L 8501l SI-8400L SI-8401L SI-8402L SI-8404L SI-8405L si8501l
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si-8400l/8500lsi-8200l/8300l8500lsi-8400l+11 | |
SK 18752
Abstract: SK 18751 2SC5586 SI-18752 fn651 709332a CTB-34D SLA6102 SLA4052 SI 18751
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o03ed0dete7837h1-o03ed0-0805020nmsk 18752+9 | |
SI-8100D
Abstract: Si8409DB Si8461 si8466 SI8425 si8812 si8802 SI8466EDB si8489 Si8100DB
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si8407dbsi8439dbsi8415dbsi8425db+15 | |
SD MOSFET DRIVE DATASHEET 4468 8 PIN
Abstract: SK 18752 ctx12s fgt313 18752 SANKEN sla6805m fn651 sla6101 SK 18751 str20012
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o03cc0room3202h1-o03cc0-1008031nmsd mosfet drive datasheet 4468 8 pin+9 | |
CTX12S
Abstract: SLA4038 fn651 SLA4037 sla1004 CTB-34D SAP17N 2SC5586 2SK1343 CTPG2F
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2sa7442sa7452sa7462sa747+16 | |
SE135N
Abstract: SE110N UX-C2B SE140N STR83159 SE130N STR2012 Transistor AC 51 SE140 SE115N
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2sa11862sa12152sa12162sa1262+16 | |
HVR-1X 7 diode
Abstract: STR80145 SE135N hvr 1X 3 diode semiconductor STR 20005 sk a 3120c SE110N ux-c2b equivalent transistor CS 9012 PNP STR83159
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o01ec0tm1061s-ltm1061s-rtm1241s-l+16 | |
IC SI-8050S 5V 3A
Abstract: sk 8050s sk a 3120c STR2012 sk 3240c sk a 3240c sk a 3050c SI-3522V SI-3132V 3522V
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ic si-8050s 5v 3ask 8050ssk a 3120cstr2012+6 | |
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si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
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mediu33-4-9337-2727vmn-sg2127-1210si7121si4914b+8 | |
SK 18752
Abstract: 2SC5586 SK 18751 sla6101 sk c4467 STR20012 SLA6102 sk A1186 SK C5071 fn651
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tf320mtf341mtf320m-atf321m-a+15 | |
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Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - Extremely Small Chipscale MOSFETs MICRO FOOT Extremely Small Chipscale MOSFETs KEY BENEFITS • Small MOSFET footprints of 0.8 mm x 0.8 mm, 1 mm x 1 mm, 1.2 mm x 1 mm, 1.5 mm x 1 mm, and 2.4 mm x 2 mm |
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si8489edbsi8902aedbvmn-pt0107-1402 | |