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    SI8445DB Search Results

    SI8445DB Datasheets (1)

    Vishay Siliconix
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SI8445DB-T2-E1
    Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 9.8A MICROFOOT Original PDF 9
    SF Impression Pixel

    SI8445DB Price and Stock

    Vishay Siliconix

    Vishay Siliconix SI8445DB-T2-E1

    3.9 A, 20 V, 0.12 OHM, P-CHANNEL, SI, POWER, MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components SI8445DB-T2-E1 3,489
    • 1 $0.81
    • 10 $0.81
    • 100 $0.81
    • 1000 $0.34
    • 10000 $0.30
    Buy Now

    SI8445DB Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    S-82023

    Abstract: Si8445DB
    Contextual Info: SPICE Device Model Si8445DB Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


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    si8445db18-jul-08s-82023 PDF

    si8445

    Abstract: Si8445DB
    Contextual Info: Si8445DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e 0.084 at VGS = - 4.5 V - 9.8 0.100 at VGS = - 2.5 V - 9.0 VDS (V) - 20 0.120 at VGS = - 1.8 V - 5.0 0.155 at VGS = - 1.5 V - 2.0 0.495 at VGS = - 1.2 V - 0.5


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    si8445db11-mar-11si8445 PDF

    Si8445DB

    Contextual Info: Si8445DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e 0.084 at VGS = - 4.5 V - 9.8 0.100 at VGS = - 2.5 V - 9.0 VDS (V) - 20 0.120 at VGS = - 1.8 V - 5.0 0.155 at VGS = - 1.5 V - 2.0 0.495 at VGS = - 1.2 V - 0.5


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    si8445db2002/95/ec2011/65/eujs709a+102-oct-12 PDF

    Si8445DB

    Contextual Info: Si8445DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)e RDS(on) (Ω) - 20 0.084 at VGS = - 4.5 V - 9.8 0.100 at VGS = - 2.5 V - 9.0 0.120 at VGS = - 1.8 V - 5.0 0.155 at VGS = - 1.5 V - 2.0 0.495 at VGS = - 1.2 V - 0.5


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    si8445db2011/65/eu2002/95/ec12-mar-12 PDF

    Si8445DB

    Contextual Info: Si8445DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e 0.084 at VGS = - 4.5 V - 9.8 0.100 at VGS = - 2.5 V - 9.0 VDS (V) - 20 0.120 at VGS = - 1.8 V - 5.0 0.155 at VGS = - 1.5 V - 2.0 0.495 at VGS = - 1.2 V - 0.5


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    si8445dbsi8445db-t2-e118-jul-08 PDF

    si84

    Abstract: SI844 Si8445DB
    Contextual Info: Si8445DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e 0.084 at VGS = - 4.5 V - 9.8 0.100 at VGS = - 2.5 V - 9.0 VDS (V) - 20 0.120 at VGS = - 1.8 V - 5.0 0.155 at VGS = - 1.5 V - 2.0 0.495 at VGS = - 1.2 V - 0.5


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    si8445dbsi8445db-t2-e12011/65/eu2002/95/ec+312-mar-12si84si844 PDF

    TA 8445

    Abstract: S-8276 Si8445DB
    Contextual Info: Si8445DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e 0.084 at VGS = - 4.5 V - 9.8 0.100 at VGS = - 2.5 V - 9.0 VDS (V) - 20 0.120 at VGS = - 1.8 V - 5.0 0.155 at VGS = - 1.5 V - 2.0 0.495 at VGS = - 1.2 V - 0.5


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    si8445db18-jul-08ta 8445s-8276 PDF

    A 68064

    Abstract: spice simulation AN609 68064 11738
    Contextual Info: Si8445DB_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When


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    si8445dban60911-apr-08a 68064+3spice simulation6806411738 PDF

    Si8445DB

    Contextual Info: Si8445DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e 0.084 at VGS = - 4.5 V - 9.8 0.100 at VGS = - 2.5 V - 9.0 VDS (V) - 20 0.120 at VGS = - 1.8 V - 5.0 0.155 at VGS = - 1.5 V - 2.0 0.495 at VGS = - 1.2 V - 0.5


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    si8445db08-apr-05 PDF

    8445

    Contextual Info: Device Orientation - MICRO FOOT Packages Vishay Siliconix Device Orientation Options for MOSFETs Part Number: Si8445DB Si8461DB MICRO FOOT® 2 x 2: 0.5 mm PITCH, 0.250 mm BUMP HEIGHT Part Number Method Si8445DB T2 Si8461DB T2 8445 xxx 8445 xxx 8445 xxx 8445


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    si8445dbsi8461dbspecification-pack-0023-11s-82976+229-dec-088445 PDF

    1A80

    Abstract: Si8445DB
    Contextual Info: SPICE Device Model Si8445DB Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


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    si8445dbs-82023-rev01-sep-081a80 PDF

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


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    gp-20fsq510 equivalentbta12 6008bta16 6008+7zigbee interface with avr atmega16precision triac control thermostatthyristor t 558 f eupecgw 5819 diodetransistor a564a564 transistorbsm25gp120 b2 PDF

    SiB431EDK

    Contextual Info: Portable Media Player Table of Contents AUDIO, Headphones. 3 AUDIO,


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    llp1010-6lllp75-6lvemi45ac-hnhvemi65ac-hci+5llp2513-13lvemi85ac-hgkllp1713-9lllp3313-17lsib431edk PDF

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Contextual Info: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


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    diod92vmn-sg2127-0911diode sot-23 marking 15dsi4210+8si4812bsi-4102si7149dpsim400si4932si7135sib914si4477 PDF