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SI8469DB Datasheets (1)

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Vishay Siliconix

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SI8469DB-T2-E1		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 8V 3.6A MICRO	Original	PDF		8

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Vishay Intertechnologies


Vishay Intertechnologies SI8469DBT2E1 P-CHANNEL 8 V (D-S) MOSFET Small Signal Field-Effect Transistor, 4.6A I(D), 8V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	SI8469DBT2E1		3,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote

SI8469DB Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Si8469DB_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	si8469db an609 9755u 4849u +60393m 1634m 0148u 1583m 6626m 19-oct-10	PDF
Contextual Info: Si8469DB Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () -8 ID (A)a, e 0.064 at VGS = - 4.5 V - 4.6 0.076 at VGS = - 2.5 V - 4.2 0.115 at VGS = - 1.5 V - 3.4 0.180 at VGS = - 1.2 V - 1.2 Qg (Typ.) 6.9 nC • Halogen-free According to IEC 61249-2-21	Original	si8469db 2002/95/ec 2011/65/eu 12-mar-12	PDF
Contextual Info: SPICE Device Model Si8469DB www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	si8469db 2002/95/ec 2011/65/eu js709a +102-oct-12	PDF
Contextual Info: Si8469DB www.vishay.com Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY -8 • TrenchFET power MOSFET RDS(on) (Ω) ID (A) a, e 0.064 at VGS = -4.5 V -4.6 0.076 at VGS = -2.5 V -4.2 0.115 at VGS = -1.5 V -3.4 0.180 at VGS = -1.2 V -1.2	Original	si8469db 2002/95/ec 2011/65/eu js709a +102-oct-12	PDF
si8469 Contextual Info: Si8469DB Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () -8 ID (A)a, e 0.064 at VGS = - 4.5 V - 4.6 0.076 at VGS = - 2.5 V - 4.2 0.115 at VGS = - 1.5 V - 3.4 0.180 at VGS = - 1.2 V - 1.2 Qg (Typ.) 6.9 nC • Halogen-free According to IEC 61249-2-21	Original	si8469db 2002/95/ec 11-mar-11 si8469	PDF
Contextual Info: Si8469DB Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () -8 ID (A)a, e 0.064 at VGS = - 4.5 V - 4.6 0.076 at VGS = - 2.5 V - 4.2 0.115 at VGS = - 1.5 V - 3.4 0.180 at VGS = - 1.2 V - 1.2 Qg (Typ.) 6.9 nC • Halogen-free According to IEC 61249-2-21	Original	si8469db 2002/95/ec 2011/65/eu js709a +102-oct-12	PDF
67370 Contextual Info: SPICE Device Model Si8469DB www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	si8469db 2011/65/eu 2002/95/ec 12-mar-12 +167370	PDF
Contextual Info: Si8469DB Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () -8 ID (A)a, e 0.064 at VGS = - 4.5 V - 4.6 0.076 at VGS = - 2.5 V - 4.2 0.115 at VGS = - 1.5 V - 3.4 0.180 at VGS = - 1.2 V - 1.2 Qg (Typ.) 6.9 nC • Halogen-free According to IEC 61249-2-21	Original	si8469db 2002/95/ec 2011/65/eu 12-mar-12	PDF
SI-8100D Abstract: Si8409DB Si8461 si8466 SI8425 si8812 si8802 SI8466EDB si8489 Si8100DB Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - World’s Smallest Chipscale MOSFETs AND TEC I INNOVAT O L OGY MICRO FOOT N HN POWER MOSFETs O 19 62-2012 World’s Smallest Chipscale MOSFETs KEY BENEFITS • Smallest MOSFET footprints of 0.8 mm x 0.8 mm, 1 mm x 1 mm, 1.2 mm x 1 mm,	Original	si8407db si8439db si8415db si8425db +15si8473edb si8413db si8487db si8409db si8483db si8499db si-8100d si8461 si8466 si8425 si8812 si8802 si8466edb si8489 si8100db	PDF
SI1489EDH Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - On-Resistance Ratings at VGS = 1.2 V 1.2 V Rated MOSFETs Industry’s First Load Switches Designed for On-Resistance Ratings at 1.2 V KEY BENEFITS • Optimized for use with the low-voltage core ICs in portable electronics systems	Original	sia920dj sc-70 sib914dk sc-75 +6si1011x si8805edb com/mosfets/12-rated-on-res/com/mosfets/15-rated-on-res/vmn-pt0103-1402 si1489edh	PDF
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	mediu33-4-9337-2727 vmn-sg2127-1210 si7121 si4914b +8si-4102 si4599 si4483a sir166 irfd120 si7949 si4459a sir836	PDF
SiB914 Abstract: SiA427DJ si2329ds si8802 Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - On-Resistance Ratings at VGS = 1.2 V AND TEC I INNOVAT O L OGY 1.2 V Rated MOSFETs N HN POWER MOSFETs O 19 62-2012 Industry’s First Load Switches Designed for On-Resistance Ratings at 1.2 V KEY BENEFITS	Original	sc-70 sc-75 com/mosfets/12-rated-on-res/com/mosfets/15-rated-on-res/+5vmn-pt0103-1209 sib914 sia427dj si2329ds si8802	PDF
Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - Extremely Small Chipscale MOSFETs MICRO FOOT Extremely Small Chipscale MOSFETs KEY BENEFITS • Small MOSFET footprints of 0.8 mm x 0.8 mm, 1 mm x 1 mm, 1.2 mm x 1 mm, 1.5 mm x 1 mm, and 2.4 mm x 2 mm	Original	si8489edb si8902aedb vmn-pt0107-1402	PDF