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    RFM10 Search Results

    RFM10 Datasheets (43)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    RFM100-3
    3M DAILY FACE MASK REUSABLE Original PDF 1.55MB 1
    RFM10N12
    Intersil 10.0A, 120V and 150V, 0.300 ?, N-Channel Power MOSFET FN1445.2 Original PDF 41.32KB 5
    RFM10N12
    General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 120V. Drain current RMS continuous 10A. Scan PDF 217.48KB 4
    RFM10N12
    General Electric (RFM10N12/15 / RFM10P12/15) N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS Scan PDF 249.34KB 4
    RFM10N12
    Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF 232.38KB 4
    RFM10N12
    International Rectifier RF and BUZ Series Power MOSFETs - N-Channel Scan PDF 40.6KB 1
    RFM10N12
    Unknown Shortform Datasheet & Cross References Data Short Form PDF 83.29KB 1
    RFM10N12
    Unknown Semiconductor Master Cross Reference Guide Scan PDF 123.51KB 1
    RFM10N12
    Unknown Semiconductor Master Cross Reference Guide Scan PDF 120.51KB 1
    RFM10N12L
    General Electric N-channel logic level power field-effect transistor (LL FET). 120V, 10A. Scan PDF 227.63KB 4
    RFM10N12L
    Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF 244.75KB 4
    RFM10N12L
    Unknown Shortform Datasheet & Cross References Data Short Form PDF 83.29KB 1
    RFM10N15
    Intersil 10.0A, 120V and 150V, 0.300 ?, N-Channel Power MOSFET FN1445.2 Original PDF 41.32KB 5
    RFM10N15
    General Electric (RFM10N12/15 / RFM10P12/15) N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS Scan PDF 249.34KB 4
    RFM10N15
    General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Drain current RMS continuous 10A. Scan PDF 217.48KB 4
    RFM10N15
    Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF 232.38KB 4
    RFM10N15
    International Rectifier RF and BUZ Series Power MOSFETs - N-Channel Scan PDF 40.6KB 1
    RFM10N15
    Intersil Obsolete Product Datasheet Scan PDF 279.03KB 5
    RFM10N15
    Unknown Shortform Datasheet & Cross References Data Short Form PDF 83.29KB 1
    RFM10N15
    Unknown Semiconductor Master Cross Reference Guide Scan PDF 123.51KB 1
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    RFM10 Price and Stock

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    3M Interconnect RFM100-5

    Respirator Daily Face Mask Reusable Full; Available Until Stocks Are Exhausted |3M RFM100-5
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark RFM100-5 Pack 10 5
    • 1 -
    • 10 $24.58
    • 100 $22.25
    • 1000 $22.25
    • 10000 $22.25
    Buy Now

    3M RFM100-5 (00051131222892)

    DAILY FACE MASK, TWO LAYERS, REUSABLE, GRAY, 8"X5", 5PK, ADJUSTABLE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS RFM100-5 (00051131222892) Package 11 3 Weeks 1
    • 1 $11.15
    • 10 $11.15
    • 100 $11.15
    • 1000 $11.15
    • 10000 $11.15
    Buy Now

    3M RFM100-10 (00051131222885)

    DAILY FACE MASK, REUSABLE, 10 PK, GRAY, 8" (20.5 CM) X 5" (12.7 CM)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS RFM100-10 (00051131222885) Package 11 3 Weeks 1
    • 1 $20.50
    • 10 $20.50
    • 100 $20.50
    • 1000 $20.50
    • 10000 $20.50
    Buy Now

    3M RFM100-3 (00051131222878)

    DAILY FACE MASK, REUSABLE, GRAY, 8" X 5", TWO LAYER, NOSE CLIP, EAR LOOPS, 3PK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS RFM100-3 (00051131222878) Package 2 3 Weeks 1
    • 1 $6.99
    • 10 $6.99
    • 100 $6.99
    • 1000 $6.99
    • 10000 $6.99
    Buy Now

    Harris Semiconductor RFM10N15L

    MOSFET N-Channel 150V 10A (Tc) TO3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics RFM10N15L 109 1
    • 1 -
    • 10 -
    • 100 $2.04
    • 1000 $1.83
    • 10000 $1.72
    Buy Now

    RFM10 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    dv4 mosfets

    Abstract: C12 IC GATE CA3240E DEPLETION MOSFET Harris Semiconductor jfet mos die mosfet cross reference n channel depletion MOSFET 2N4036 AN7254
    Contextual Info: Harris Semiconductor No. AN7254.2 Harris Power MOSFETs April 1994 Switching Waveforms Of The L2FET: A 5 Volt Gate-Drive Power MOSFET Author: C. Frank Wheatley, Jr. and Harold R. Ronan, Jr. gate sensitivity, as shown in Figures 1, 2, and 3, which are comparisons of the industry standard RFM10N15 with its


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    an7254rfm10n15rfm10n15ldv4 mosfets+8c12 ic gateca3240edepletion mosfetharris semiconductor jfetmos diemosfet cross referencen channel depletion mosfet2n4036 PDF

    F10N12L

    Abstract: F10N15L 10N15L F10N12 RFP10N15L F10N15 RFP10N12L 10n15 RFM10N12L RFM10N15L
    Contextual Info: Logic-Level Power MOSFETs_ RFM10N12L, RFM10N15L, RFP10N12L, RFP10N15L File N u m be r 1559 Power Logic Level MOSFETs N-Channel Logic Level Power Field-Effect Transistors L2 FET TERMINAL DIAGRAM 10 A, 120 V — 150 V rDsioni: 0.3 f)


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    rfm10n12lrfm10n15lrfp10n12lrfp10n15l+792cs-3374if10n12lf10n15l10n15lf10n12f10n1510n15 PDF

    RCA 467

    Abstract: TA9405 RFM10P12 transistor RCA 467 RFP10P12 TA9404 TA940 92CS-38272 RFM10P15 RFP10P15
    Contextual Info: Standard Power M O S F E Ts_ RFM10P12, RFM10P15, RFP10P12, RFP10P15 File Number 1595 P-Channel Enhancement-Mode Power Field-Effect Transistors 10 A, -120V and -150 V rDS on = 0.5 n TE R M IN A L DIA G R A M Features: • ■ ■ •


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    rfm10p12rfm10p15rfp10p12rfp10p15+8-120v2cs-992t3rca 467ta9405transistor rca 467ta9404ta94092cs-38272 PDF

    M339

    Abstract: RFP10N15 transistor m339 ta9192 RFP10N12 RFM10N12 RFM10N15
    Contextual Info: □1 DE I 3fl7SDfll DDlflim S | ~ 3875081 G E SOLID STATE 0 1E 18141 D T -3 9 ’] / Standard Power MOSFETs_ RFM10N12, RFM10N15, RFP10N12, RFP10N15 File Num ber 1445 N-Channel Enhancement-Mode Power Field-Effect Transistors 10 A, 120 V — 150 V ros on : 0.3 fi


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    3fl75dfllrfm10n12rfm10n15rfp10n12+5rfp10n15switchin5081m339transistor m339ta9192 PDF

    CS3705

    Abstract: RFM10n50 RFM10N45
    Contextual Info: Standard Power M O S F E T s - RFM10N45, RFM10N50 File Number 1788 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors 10 A, 450 V - 500 V 0.6 1 N-CHANNEL ENHANCEMENT MODE fD S lo n *


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    rfm10n45rfm10n5092cs-5706ian-7254+5an-726092cs-37062j2cs-3706392cs-37376cs3705 PDF

    TA17435

    Abstract: RFM10n50 AN7254 AN7260 RFM10N45
    Contextual Info: RFM10N45, RFM10N50 Semiconductor 10A, 450V and 500V, 0.600 O hm , N-Channel Power M O SFETs September 1998 Features Description • 10A, 450V and 500V These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such


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    rfm10n45rfm10n50t0-204aata17435+350bvnssan7254an7260 PDF

    RFM10N50

    Abstract: AN7254 AN7260 RFM10N45 TA17435
    Contextual Info: [ /Title RFM10 N45, RFM10 N50 /Subject (10A, 450V and 500V, 0.600 Ohm, NChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO204AA) /Creator () /DOCIN FO pdfmark RFM10N45, RFM10N50 Semiconductor 10A, 450V and 500V, 0.600 Ohm,


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    rfm10o204aarfm10n45rfm10n50+3an7254an7260ta17435 PDF

    F10N15L

    Abstract: F10N12L RCA SOLID STATE F10N12L F10N12 RFM10N15L F10N15 RFP10N15L RFM10N12L RFP10N12L TA9530
    Contextual Info: 387 5081 G E SOLID STATE 01 DE | 3A75Dfil Q01fll4M4 1 1 T'37 Logic-Level Power MOSFETs _ :_ RFM10N12L, RFM10N15L, RFP10N12L, RFP10N15L F ile N u m b e r 1559 Power Logic Level MOSFETs N-Channel Logic Level


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    3fl75dfilrfm10n12lrfm10n15lrfp10n12l+7rfp10n15lf10n15lf10n12lrca solid state f10n12lf10n12f10n15ta9530 PDF

    RFM10P12

    Abstract: RFM10P15 RFP10P12 RFP10P15 rca MIL ID TA9404 rca solid state Linear I8233
    Contextual Info: "Öl G E SOLID STATE DE . 3 8 7 5 0 8 1 G E SO LID STATE Standard Power MOSFETs_ I 3Û750S1 01E Ì 8233 RFM10P12, RFM10P15, RFP10P12, RFP10P15 0010233 0 |~~ D T - 3 ^ -2 / F ile N u m b e r 1595 T E R M IN A L DIA G RAM P-Channel Enhancement-Mode


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    rfm10p12rfm10p15rfp10p12rfp10p15+6-120vand-150rca mil idta9404rca solid state lineari8233 PDF

    TB334

    Abstract: RFP10N12 AN7254 RFM10N12 RFM10N15 RFP10N15 TB-334
    Contextual Info: R M S RFM10N12, RFM10N15, RFP10N12, RFP10N15 Semiconductor October 1998 Data Sheet File Number 1445.2 Features 10A, 120V and 150V, 0.300 Ohm, N-Channel Power MOSFETs • 10A, 120V and 150V These are N-channel enhancement-mode silicon-gate power field effect transistors designed for applications such


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    rfm10n12rfm10n15rfp10n12rfp10n15+5ta09192t0-204aatb334an7254tb-334 PDF

    10N45

    Abstract: 10n50
    Contextual Info: RFM10N45 RFM10N50 2 H a r r is N-Channel Enhancement Mode Power Field Effect Transistors August 1991 Features Packages T 0 -2 0 4 A A BOTTOM VIEW • 10A, 4 5 0 V and 5 0 0V • rDS on) = ° - 6 ^ • S O A is P ow er-D issip atio n Limited • N anosecond Switching S peeds


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    rfm10n45rfm10n5092cs-s706310n45+110n50 PDF

    10N15

    Abstract: 10N12 rfm10n rfp10n12
    Contextual Info: 2 HARRIS RFM10N12/10N15 RFP10N12/10N15 N-Channel Enhancement Mode Power Field Effect Transistors ugust 1991 Features Packages T0-204AA • 10A, 120V and 150V T0 2 • rDS on = 0.3ft • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics


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    rfm10n12/10n15rfp10n12/10n15t0-204aarfm10n12+8rfm10n15rfp10n12rfp10n15an-7254an-726010n1510n12rfm10n PDF

    ta9192

    Abstract: RFP10N12 RFM10N12 RFM10N15 RFP10N15
    Contextual Info: RFM10N12, RFM10N15, RFP10N12, RFP10N15 File Num ber N-Channel Enhancement-Mode Power Field-Effect Transistors 10 A, 120 V — 150 V ros on : 0.3 fi 1445 Features: co-V-'hI T j O • S O A is pow er-dissipation lim ited ■ N an o seco n d sw itch in g sp e e d s


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    rfm10n12rfm10n15rfp10n12rfp10n15+1ta9192 PDF

    10n12

    Abstract: 92CS-3780I ta9192 RFM10N15 RFM1 RFP mosfets ta9212 A9212 RFM10N12 RFP10N12
    Contextual Info: Standard Power M OSFETs- -— -——- RFM10N12, RFM10N15, RFP I0N1I2, RFP10N15 N-Channel Enhancement-Mod Power Field-Effect Transistors — - File Number 1445 % 10 A, 120 V — 150 V


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    rfm10n12rfm10n15rfp10n15rfp10n12+8rfp10m1210n1292cs-3780ita9192rfm1rfp mosfetsta9212a9212 PDF

    rfm10n50

    Contextual Info: W vys S RFM10N45, RFM10N50 Semiconductor y 10A, 450V and 500V, 0.600 Ohm, N-Channel Power MOSFETs September 1998 Features Description • 10A, 450V and 500V These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such


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    rfm10n45rfm10n50o-204aata17435+250bvpgs0-25b PDF

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


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    2sc429gtm2sc4582sc458lg2sc503+162sc5042sc5102sc5122sc5192sc520a2sc594sn76131tlo72cptoshiba 2n3055m53207p2n3055 toshibakia7313apkia7640apla5530m5l8155ptbb1458b PDF

    RFL10N15

    Abstract: 330 e57
    Contextual Info: H A RR IS S E N I C O N D SECT OR bflE D • 430 E57 1 G D S 1 QT 4 t,43 ■ HARRIS HAS P C F 10N 15W P^jF1 0N15D SEMICONDUCTOR January 1993 N-Channel MOS Chip Features Die • Passivated • Contact Metallization - Gate and Source - Aluminum - Drain • Tri-Metal AI-TI-Ni


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    0n15dmii-std-750rfm10n15rfp10n15+6rfl10n15pcf10n15wpcf10n15d122x1221-800-4-harris330 e57 PDF

    buz11

    Abstract: BUZ31 THOMSON DISTRIBUTOR 58e d RFK30N12 THOMSON 58E THOMSON DISTRIBUTOR BUZ71 BUZ71A RFH12N RFK45N05
    Contextual Info: THOnSON/ DISTRIBUTOR 5flE D • ^05^873 □□□57D3 5fl3 Wt TCSK P o w er M O S FE T s RF and B U Z -S e rie s P ow er M O S FE Ts — N -C h a n n e l Package Maximum Ratings BV q s S V id s (A) r DS(ON) OHMS 50 2 4 13 14 15 25 25 30 45 0.75 0.60 0.12


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    t0-204o-205o-218o-220+15rfm15n05rfm25n05rfk45n05rfl2n05rfh45n05rfp4n05buz11buz31thomson distributor 58e drfk30n12thomson 58ethomson distributorbuz71buz71arfh12n PDF

    RF sensor

    Abstract: flexible sensor
    Contextual Info: Temposonics ® Magnetostrictive, Absolute, Non-contact Linear-Position Sensors SENSORS R-Series Model RF Flexible Housing Option Document Part Number 551081 Revision B Data Sheet Model RF flexible housing option for R-Series sensors with voltage, current, SSI, CANbus,


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    rf sensorflexible sensor PDF

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


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    eaton cm20aa5 gne mosfethall sensor 44e 4022n8491+6ftg 1087 striac bcr 10kmfeb3tsmd transistor marking 352asharp eia 577 sharp color tv schematic diagrammp-130 m mh-ce 10268 PDF

    IRF722P

    Abstract: IRF732P SGSP3055 IRF730P 1rfp450 IRF510 SGSP312 IRF540FI irf522p MTP20N10
    Contextual Info: CROSS REFERENCE SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI 2SK312 2SK313


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    2sk2952sk2962sk3082sk310+162sk3112sk3122sk3132sk3192sk3202sk324irf722pirf732psgsp3055irf730p1rfp450irf510sgsp312irf540fiirf522pmtp20n10 PDF

    10N15L

    Abstract: P10N15L RFP10N12L
    Contextual Info: R F M 1 0 N 1 2 L /1 5 L R F P 1 0 N 1 2 L /1 5 L gì h a r r is N - C h a n n e l L o g ic Level P o w e r F ie l d - E f f e c t T r a n s is to r s L 2 F ET August 1991 Package F e a tu re s T O -2 0 4 A A • 10A, 120V and 150V BOTTOM VIEW • rDS(0N) = 0 .3 fl


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    fp10n12lan7254an-726092cs-3bi64+310n15lp10n15lrfp10n12l PDF

    4311 mosfet transistor

    Abstract: D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r
    Contextual Info: - POWER MOSFETs 4 N-CHANNEL POWER MOSFETs PAGE 2N6755, 2N6756 N-Channel Enhancement-Mode Power Field-Effect Transistors. 2N6757, 2N6758 N-Channel Enhancement-Mode Power Field-Effect Transistors. 4-11 2N6759, 2N6760


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    2n67552n67562n67572n6758+162n67592n67602n67612n67622n67632n67644311 mosfet transistord 4206 transistortransistor d 322power mosfetsd 843 transistortransistor irf230h a 431 transistormosfet irf460n-channel 4336742r PDF

    field-effect transistors

    Abstract: 05LSM RFP8N18L RFP25N06L transistors 2N6904 field-effect transistor RFP14N05L M 615 transistor transistor 684
    Contextual Info: _ POWER MOSFETs 6 L O G IC L E V E L P O W E R M O S F E T s PAGE 2N6901 N-Channel Logic Level Power MOS Field-Effect Transistor L2F E T . 6-3 2N6902 N-Channel Logic Level Power MOS Field-Effect Transistor (L2F E T ) .


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    2n69012n69022n69032n6904+15rfl1n08lrfl1n10lrfl1n12lrfl1n15lrfl1n18lrfl1n20lfield-effect transistors05lsmrfp8n18lrfp25n06ltransistorsfield-effect transistorrfp14n05lm 615 transistortransistor 684 PDF