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    RFP10P12 Search Results

    RFP10P12 Datasheets (5)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    RFP10P12
    Toshiba Power MOSFETs Cross Reference Guide Original PDF 165.78KB 67
    RFP10P12
    General Electric P-channel enhancement-mode power field-effect transistor. Drain-sourge voltage -120V. Drain current Rms continuous 10A. Scan PDF 240.39KB 4
    RFP10P12
    Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF 249.22KB 4
    RFP10P12
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 39.81KB 1
    RFP10P12
    Unknown Shortform Datasheet & Cross References Data Short Form PDF 82.82KB 1
    SF Impression Pixel

    RFP10P12 Price and Stock

    Harris Semiconductor

    Harris Semiconductor RFP10P12

    MOSFET N-Channel 120V 10A (Tc) TO-220-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics RFP10P12 300 1
    • 1 -
    • 10 -
    • 100 $1.35
    • 1000 $1.12
    • 10000 $1.00
    Buy Now

    RFP10P12 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    RCA 467

    Abstract: TA9405 RFM10P12 transistor RCA 467 RFP10P12 TA9404 TA940 92CS-38272 RFM10P15 RFP10P15
    Contextual Info: Standard Power M O S F E Ts_ RFM10P12, RFM10P15, RFP10P12, RFP10P15 File Number 1595 P-Channel Enhancement-Mode Power Field-Effect Transistors 10 A, -120V and -150 V rDS on = 0.5 n TE R M IN A L DIA G R A M Features: • ■ ■ •


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    rfm10p12rfm10p15rfp10p12rfp10p15+8-120v2cs-992t3rca 467ta9405transistor rca 467ta9404ta94092cs-38272 PDF

    RFM10P12

    Abstract: RFM10P15 RFP10P12 RFP10P15 rca MIL ID TA9404 rca solid state Linear I8233
    Contextual Info: "Öl G E SOLID STATE DE . 3 8 7 5 0 8 1 G E SO LID STATE Standard Power MOSFETs_ I 3Û750S1 01E Ì 8233 RFM10P12, RFM10P15, RFP10P12, RFP10P15 0010233 0 |~~ D T - 3 ^ -2 / F ile N u m b e r 1595 T E R M IN A L DIA G RAM P-Channel Enhancement-Mode


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    rfm10p12rfm10p15rfp10p12rfp10p15+6-120vand-150rca mil idta9404rca solid state lineari8233 PDF

    Contextual Info: RFM10P12, RFM10P15, RFP10P12, RFP10P15 H A R R IS S E M I C O N D U C T O R -10A, -120V and -150V, 0.5 Ohm, P-Channel Power MOSFETs July 1998 Features Description • -10A,-120V and-150V These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such


    OCR Scan
    rfm10p12rfm10p15rfp10p12rfp10p15+5-120v-150vand-150vta9404an7254 PDF

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


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    eaton cm20aa5 gne mosfethall sensor 44e 4022n8491+6ftg 1087 striac bcr 10kmfeb3tsmd transistor marking 352asharp eia 577 sharp color tv schematic diagrammp-130 m mh-ce 10268 PDF

    p12p10

    Abstract: IRF9530* p-channel power MOSFET 2N6898 Power MOSFETs Field-Effect Transistors IRFP9140/P9141 irf9640 mosfet IRF9530 P-channel power p-channel irfp9240
    Contextual Info: - POWER MOSFETs 5 P-CHANNEL POWER MOSFETs PAGE 2N6804 Avalanche Energy Rated P-Channel Power M OSFET. 5-3 2N6849 Avalanche Energy Rated P-Channel Power MOSFET. 5-8 2N6851


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    2n68042n68492n68512n6895+152n68962n68972n6898irf9130irf9131irf9132p12p10irf9530* p-channel power mosfetpower mosfetsfield-effect transistorsirfp9140/p9141irf9640 mosfetirf9530 p-channel powerp-channelirfp9240 PDF

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original
    2n70002n70022sj3772sj378+162sj3802sj4012sj4022sj4072sj4122sj419yta630mtw14p20bss125mtaj30n06hd2sk2837 equivalentsmu10p05smp60n06 replacementste180n10rfh75n05eirfd620 PDF

    10p15

    Abstract: 10P12 RFM10P12 rfp10p15 RFM10P15
    Contextual Info: m H a r r is R F M 1 0 P 1 2 /1 0 P 15 R F P 10P 12 /1 0 P 1 5 P-Channel Enhancement-Mode Power Field-Effect Transistors A ug ust 19 91 Packages Features T 0 -2 0 4 A A BOTTOM VIEW • -1 0 A , -1 2 0 V and -1 5 0 V • rD S on = 0 .5 n • S O A is P o w er-D issip atio n Lim ited


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    rfp10p12fp10p1510p1510p12+3rfm10p12rfp10p15rfm10p15 PDF

    RFM10P12

    Abstract: RFM10P15 TA940 RFP10P12 RFP10P15 TB334
    Contextual Info: RFP10P15 Data Sheet -10A, -150V, 0.500 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching


    Original
    rfp10p15-150vta9404rfm10p12+4rfm10p15ta940rfp10p12tb334 PDF

    bu245a

    Abstract: 2n6895 BU245 RFM12P10 RFP12P10 2N6897 to205 rfm3n RFP8P08 rfp10p15
    Contextual Info: THOnSON/ DISTRIBUTOR SflE D 0QD5704 41T TCSK P o w er M O S FE Ts RF and BUZ-Series Power MOSFETs — N-Channel continued P a cka g e M a x im u m R a tin g s BVq s s (V) Id s (A) r DS(O N) O HM S 400 4 7 12 4.5 5.5 3.0 2.6 11.5 1.50 0.75 0.38 1.50 1.00


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    0qd5704o-204o-205o-218+16o-220rfm4n40rfm7n40rfm12n40rfh12n40buz351bu245a2n6895bu245rfm12p10rfp12p102n6897to205rfm3nrfp8p08rfp10p15 PDF

    IRF740 "direct replacement"

    Abstract: irf9640 REPLACEMENT GUIDE IRF9540 replacement IRF640 irf510 2Sk350 HITACHI IRF9613 rca9213a buz11 cross reference sgsp467 fu120
    Contextual Info: CROSS REFERENCE GUIDE POWER MOSFETs Inter­ national Rectifier SAMSUNG Direct Replace­ ment Inter­ national Rectifier SAMSUNG Direct Replace­ ment Inter­ national Rectifier SAMSUNG Direct Replace­ ment Inter­ national Rectifier SAMSUNG Direct Replace­


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    irf510irf511irf512irf513+16irf520irf521irf522irf523irf610irf611irf740 "direct replacementirf9640 replacement guideirf9540 replacementirf640 irf5102sk350 hitachiirf9613rca9213abuz11 cross referencesgsp467fu120 PDF

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


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    cb-f36c2sd16422sd21822sc4489+11-08s-ksd 302 250v, 10airf 5630transistor 2sb 367irf 3055ac153ytransistor esm 2878tip 43c transistor2sk116bf199bd643 PDF

    equivalent data book of 10N60 mosfet

    Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
    Contextual Info: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:


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    1-800-4harrisequivalent data book of 10n60 mosfetmc14016cpgd4511+7an-6466cx 2859 smd74ac14 spice6120* harrishcf4018be7028 smd transistorspice irfbc40 PDF