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    2N6901 Search Results

    2N6901 Datasheets (7)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2N6901
    		Microsemi FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V TO-205AF TO-39 Original PDF 3
    2N6901
    		Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF 270.58KB 5
    2N6901
    		Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 30.78KB 1
    2N6901
    		Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 108.1KB 1
    2N6901
    		Unknown Shortform Datasheet & Cross References Data Short Form PDF 83.37KB 1
    2N6901TX
    		Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 30.78KB 1
    2N6901TXV
    		Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 30.78KB 1
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    2N6901 Price and Stock

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    Intersil Corporation JAN2N6901

    Trans MOSFET N-CH 100V 1.69A 3-Pin TO-39
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics JAN2N6901 318
    • 1 -
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    NJS 2N6901

    TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,1.5A I(D),TO-205AF
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2N6901 19
    • 1 $22.50
    • 10 $20.00
    • 100 $18.50
    • 1000 $18.50
    • 10000 $18.50
    		Buy Now

    Baumer Electric Ag OHDM 12N6901/S35A

    Sensor: photoelectric; OHDM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME OHDM 12N6901/S35A 1
    • 1 $673.03
    • 10 $637.61
    • 100 $637.61
    • 1000 $637.61
    • 10000 $637.61
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    Microsemi Corporation (now Microchip) JAN2N6901

    Small Signal Field-Effect Transistor, 1.69A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Vyrian JAN2N6901 461
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    2N6901 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    field-effect transistors

    Abstract: 05LSM RFP8N18L RFP25N06L transistors 2N6904 field-effect transistor RFP14N05L M 615 transistor transistor 684
    Contextual Info: _ POWER MOSFETs 6 L O G IC L E V E L P O W E R M O S F E T s PAGE 2N6901 N-Channel Logic Level Power MOS Field-Effect Transistor L2F E T . 6-3 2N6902 N-Channel Logic Level Power MOS Field-Effect Transistor (L2F E T ) .


    OCR Scan     		2n69012n69022n69032n6904+15rfl1n08lrfl1n10lrfl1n12lrfl1n15lrfl1n18lrfl1n20lfield-effect transistors05lsmrfp8n18lrfp25n06ltransistorsfield-effect transistorrfp14n05lm 615 transistortransistor 684 PDF

    2N6901

    Contextual Info: • 3 3 430 2 57 1 GDS'ib'lE T3ö ■ H A R R HAS 2N6901 IS A u g u s t 1991 N -Channel Logic Level Power MOS Field-Effect Transistors L2 FET Package Features T 0 -2 0 5 A F • 1.69A , 1 0 0V BOTTOM VIEW • r D S {on) = 1-4 n GATE SOURCE • Design O ptim ized for 5V G ate Drive


    OCR Scan     		2n690192cm-407074302e71 PDF

    2N6901

    Contextual Info: TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 (212)227-6005 FAX: (973) 376-8960 U.SA 2N6901 ABSOLUTE MAXIMUM RATINGS (Tc = +25°C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Drain — Source Voltage VDS 1 00


    Original     		2n6901 PDF

    2N6901

    Contextual Info: N-CHANNEL LOGIC LEVEL POWER MOSFET 2N6901 • N-Channel Logic Level • Logic Level Power MOSFET Transistor In A Hermetic TO-39 Metal Package • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VDS VGS VDG ID ID IDM


    Original     		2n6901o-205af PDF

    2N6901 JANTX

    Abstract: 2N6901 2N6901 JANTXV 2N6901 JANTX harris 2n6898 transistor h44 2n6800 2N6897 JANTXV 2N6897
    Contextual Info: Logic-Level Power MOSFETs File Number 2N6901 1877 N-Channel Logic Level Power MOS Field-Effect Transistors L2FET rDs(on): 1.4 fi Feature*: • Design optimized for 5-voit gate drive ■ Can be driven directly from QMOS, NMOS, TTL circuits ■ Compatible with automotive drive requirements


    OCR Scan     		2n69012n6796o-2i35afo-205af+112n6800t0-205af2n6802mil-s-19500/2n6901 jantx2n6901 jantxv2n6901 jantx harris2n6898transistor h442n6897 jantxv2n6897 PDF

    lts 542

    Abstract: LTS 543 2n6800 LTS 542 INTERNAL DIAGRAM 2N6756 2N6790 LH0063 QPL-19500 TRANSISTOR C 557 B
    Contextual Info: Standard Power MOSFETs 2N6790 File N u m be r 1900 N-Channel Enhancement-Mode Power MOS Field-Effect Transistors 3.5 A, 200V N-CHANNEL ENHANCEMENT MODE TDSIonl = 0 . 8 0 Features: • a ■ ■ m SOA is power-dissipation limited Nanosecond switching speeds


    OCR Scan     		2n679092cs-3374i2n6796o-2i35af+10o-205af2n6800t0-205aflts 542lts 543lts 542 internal diagram2n6756lh0063qpl-19500transistor c 557 b PDF

    QPL-19500

    Abstract: 2N6903 2n6901 2N6758 JANTX 2N6903 JANTX 2N6898 JANTX 2N6898 2N6756 2N6758 2N6760
    Contextual Info: Logic-Level Power MOSFETs File Number 2N6903 1879 N-Channel Logic Level Power MOS Field-Effect Transistors L2FET rDs(on): 3.65 O N-CHANNEL ENHANCEMENT MODE Features: • Design optimized for S-voit gate drive ■ Can be driven directly from QMOS, NMOS, TTL circuits


    OCR Scan     		2n69032n6796o-2i35afo-205af+132n6800t0-205af2n6802mil-s-19500/qpl-195002n69012n6758 jantx2n6903 jantx2n6898 jantx2n68982n67562n67582n6760 PDF

    2n5764

    Abstract: 2N6764 JANTXV 2N6764 JANTX 2N6764 2N6164 2N6901 2N6763 25C31
    Contextual Info: Standard Power MOSFETs, File Number 2N6763, 2N6764 1590 N-Channel Enhancement-Mode Power MOS Field-Ef fect Transistors 31A and 38A, 60V-100V rDs on = 0.08 O and 0.055 Q N-CHANNEL ENHANCEMENT MODE Feature«: • SOA is power-dissipation lim ited ■ Nanosecond sw itching speeds


    OCR Scan     		2n67632n67640v-100v2n6796+7o-2i35af2n57642n6764 jantxv2n6764 jantx2n61642n690125c31 PDF

    2N6898 JANTX

    Abstract: 2N6898 2N6898 JANTXV TRANSISTOR C 557 B QPL-19500
    Contextual Info: Standard Power MOSFETs File Number 2N6898 1876 Power MOS Field-Effect Transistors P-Channel Enhancement-Mode Power MOS Field-Effect Transistors 25 A, -1 0 0 V rDs on : 0.20 Cl TERMINAL DIAGRAM Features: • SOA is power-dissipation lim ited ■ Nanosecond switching speeds


    OCR Scan     		2n68982n6796o-2i35afo-205af+82n6800t0-205af2n6802mil-s-19500/2n6898 jantx2n6898 jantxvtransistor c 557 bqpl-19500 PDF

    2N6794

    Abstract: 2N6794 JANTX fllnm 80 3v 4 channal relay fllnm qpl-19500 LH0063 TRANSISTOR C 557 B 600V P-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6796 IR
    Contextual Info: Standard Power MOSFETs 2N6794 File Number 1902 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistor 1.5A, 500V rD S on = 3 0 N-CHANNEL ENHANCEMENT MODE Features: • SOA is power-dissipation lim ited m Nanosecond switching speeds


    OCR Scan     		2n67942n6796o-2i35afo-205af+132n6800t0-205af2n6802mil-s-19500/2n6794 jantxfllnm 803v 4 channal relayfllnmqpl-19500lh0063transistor c 557 b600v p-channel enhancement mode power mosfet2n6796 ir PDF

    2N6901

    Abstract: 2n6901 jantxv
    Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 N-CHANNEL LOGIC LEVEL MOSFET


    Original     		mil-prf-19500/5702n6901o-205t4-lds-0188+12n6901 jantxv PDF

    2N6782

    Abstract: 2n6800 LH0063 QPL-19500
    Contextual Info: Standard Power MOSFETs 2N6782 File Number 1592 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 3.5A, 100V ro s o n = 0 .6 O Features: • SOA is power-dissipation limited ■ Nanosecond switching speeds


    OCR Scan     		2n67822n6796o-2i35afo-205af+52n6800t0-205af2n6802lh0063qpl-19500 PDF

    2N6770

    Abstract: 2n6800 2N6769 2N6770 JANTXV 2N6770 JANTX
    Contextual Info: Standard Power MOSFETs File N u m be r 2N6769, 2N6770 1899 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistore 11A and 12A, 4 50 V -5 0 0 V rDS on> = 0.50 and 0.40 N-CHANNEL ENHANCEMENT MODE Features: • SOA is power-dissipation limited


    OCR Scan     		2n67692n677050v-500v2n6796+5o-2i35afo-205af2n68002n6770 jantxv2n6770 jantx PDF

    2N6760

    Abstract: 2N6898 2N67 2N6759
    Contextual Info: Standard Power M O SFETs 2N6759, 2N6760 File Number 1588 N-Channel Enhancement-Mode Power Field-Effect Transistors T E R M IN A L D IA G R A M 4.5A and 5.5A, 350V - 400V rDs on = 1.0 Q and 1.5 Q o 9 Features: • SOA is pow er-dissipation lim ited ■ N anosecond sw itching speeds


    OCR Scan     		2n67592n6760tq-204aa2n6796+5o-2i35afo-205af2n68002n68982n67 PDF

    2N6898

    Abstract: 2N6897 36485 2N6798 TRANSISTOR C 557 B 2n6800 2N6901 IDM30 2N6904 qpl-19500
    Contextual Info: Standard Power M O SFETs File Number 1875 2N6897 Power M O S Field-Effect Transistors P-Channei Enhancement-Mode Power M O S Field-Effect Transistors 12 A, 100 V ros on : 0.3 0 TERMINAL DIAGRAM 3 o Features: • SOA is power-dissipation lim ited ■ Nanosecond sw itching speeds


    OCR Scan     		2n68972n6796o-2i35afo-205af+122n6800t0-205af2n6802mil-s-19500/2n6898364852n6798transistor c 557 b2n6901idm302n6904qpl-19500 PDF

    2N6849

    Abstract: 2N6849 JANTX b 43306 2n6800 2n6849 mosfet 2n6849 jantxv
    Contextual Info: Rugged Power MOSFETs File N u m b e r 2N6849 2219 Avalanche-Energy-Rated P-Channel Power MOSFETs -6.5A, and -100V ib s on = 0.30Q TERMINAL DIAGRAM D Features: • Single pulse avalanche energy rated m SOA is pow er-dissipation lim ited m N anosecond sw itching speeds


    OCR Scan     		2n6849-100v92cs-432622n6796+8o-2i35afo-205af2n6800t0-205af2n6849 jantxb 433062n6849 mosfet2n6849 jantxv PDF

    2N6758

    Abstract: 2N6902 QPL-19500
    Contextual Info: Logic-Level Power MOSFETs File Number 2N6902 1878 N-Channel Logic Level Power MOS Field-Effect Transistors L2 FET 12 A, 100 V rDs(on): 0.2 fi N-CHANNEL. ENHANCEMENT MODE Features: • Design optimized for 5 volt gate drive • Can be driven directly from Q-MOS,


    OCR Scan     		2n690292cs-3374i2n6796o-2i35af+6o-205af2n6800t0-205af2n68022n6758qpl-19500 PDF

    2n6798 jantx

    Abstract: 2N6798 IH0063 2N6756 QPL-19500
    Contextual Info: Standard Power MOSFETs 2N6798 File Number 1903 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistor 5.5A, 200V TDSIonl = 0 .4 0 N-CHANNEL ENHANCEMENT MODE Features: • m m ■ ■ SOA is power-dissipation limited


    OCR Scan     		2n67982n6796o-2i35afo-205af+82n6800t0-205af2n6802mil-s-19500/2n6798 jantxih00632n6756qpl-19500 PDF

    2N6792 JANTX

    Abstract: 2N6792 2n6800 C055 LH0063 QPL-19500 2N6904
    Contextual Info: Standard Power MOSFETs File N u m be r 1901 2N6792 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistors 2 A, 400V T oS lon = 1 80 N-CHANNEL ENHANCEMENT MODE D Features: • SOA is power-dissipation limited m Nanosecond switching speeds


    OCR Scan     		2n67922n6796o-2i35afo-205af+92n6800t0-205af2n6802mil-s-19500/2n6792 jantxc055lh0063qpl-195002n6904 PDF

    qpl-19500

    Abstract: 2N6896 TRANSISTOR C 557 B 2N6898 40716 2N6897 JANTXV
    Contextual Info: Standard Power MOSFETs File Number 2N6896 1874 Power MOS Field-Eflfect Transistors P-Channel Enhancernent-Mode Power MOS Field-Efffect Transistors 6 A, 100 V rDs on : 0.6 Ci TE R M IN A L D IA G R A M Feature«: • SOA is power-dissipation lim ited ■ Nanosecond sw itching speeds


    OCR Scan     		2n6896t0-204aa2n6796o-2i35af+8o-205af2n6800t0-205afqpl-19500transistor c 557 b2n6898407162n6897 jantxv PDF

    2N7119

    Abstract: 2N7122 2N7121 2N6967 2N7243 2N724 2N6966 2N7123 JANTX LTPD FOR LOT AND SCREENING DEVICES 2N7242
    Contextual Info: HARRIS SEMICOND SECTOR SbE T> • 430EE71 QÜ42235 ‘ìbb H H A S Military Power Products MOSFETs M ilitary Pow er Products Military and aerospace requirements for high—reliability solid-state devices are extremely large and diverse, not only in terms of performance, operating conditions, and


    OCR Scan     		430ee71qg42235tc5-204aa2n7120+11t0-204aa2n71212n71222n71232n71192n69672n72432n7242n6966jantx ltpd for lot and screening devices2n7242 PDF

    2N6784

    Abstract: 2n6800 LH0063 QPL-19500 2sC 1906 transistor 2N6784 JANTX
    Contextual Info: Standard Power MOSFETs File N um ber 2N6784 1906 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistor N-CHANNEL ENHANCEMENT MODE 2.25A, 200V fD S o n = 1.50 Features: • SOA is power-dissipatiort limited m Nanosecond switching speeds


    OCR Scan     		2n67842n6796o-2i35afo-205af+72n6800t0-205af2n6802lh0063qpl-195002sc 1906 transistor2n6784 jantx PDF

    2N6851

    Abstract: 2N6851 JANTX 2n6800
    Contextual Info: Rugged Power MOSFETs 2N6851 File N u m be r 2218 Avalanche-Energy-Rated P-Channel Power MOSFETs -4.0A, and -200V I ds on = 0.80Q TERMINAL DIAGRAM Features: • S in g le p u lse a v a la n ch e e n e rg y ra te d m S O A is p o w e r-d is s ip a tio n lim ite d


    OCR Scan     		2n6851-200vcs-432n6796+5o-2i35afo-205af2n6800t0-205af2n6851 jantx PDF

    2N6903 JANTX

    Abstract: 2N6903
    Contextual Info: INCH - POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 11 April 2009. MIL-PRF-19500/570D 11 January 2009 SUPERSEDING MIL-PRF-19500/570C 17 August 2005 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT,


    Original     		mil-prf-19500/570dmil-prf-19500/570c2n69012n6903+2mil-prf-195002n6903 jantx PDF