NEC GAAS Search Results

MRF947T1 equivalent

Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
Contextual Info: California Eastern Laboratories CEL / NEC - Complete Cross Reference Manufacturer Part Nbr NEC 2SA1977 NEC 2SA1978 NEC 2SC2351 NEC 2SC3355 NEC 2SC3357 NEC 2SC3545 NEC 2SC3583 NEC 2SC3585 Toshiba Matsushita Matsushita NEC 2SC4093 NEC 2SC4094 NEC 2SC4095 Hitachi

SMD M05 sot

Abstract: NESG303100G SMD transistor M05 transistor NEC D 882 p m33 tf 130 H02 SOT-363 SMD M05 sot23 UPC8236 T6N 700 NE68000 s-parameters
Contextual Info: NEC XXXXXXXXXX NEC RF & Wireless Semiconductors 2008 NEC CEL & NEC CONTENTS California Eastern Laboratories serves designers, OEMs GaAs RFIC Switches 3 and contract manufacturers in the RF & Wireless, Mobile- Small Signal GaAs FETs 4 comm, Multimedia, Broadband Communications, Industrial

UAA 1006

Abstract: manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71
Contextual Info: NEC Offices NEC Electronics Europe GmbH Oberrather Str. 4 D-40472 Düsseldorf, Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 NEC Electronics Italiana S.R.L. Via Fabio Filzi, 25A I-20124 Milano Tel. (02) 66 75 41 Fax (02) 66 75 42 99 NEC Electronics (Germany) GmbH

nec book

Abstract: transister relay book NEC RELAY
Contextual Info: NEC Semiconductor Data Book List NEC Semiconductor Data Book CD-ROM List April 1999 Following is the list of the Semiconductor Data Books NEC has published. If you need a copy, please ask our sales representative. Title / Items Memory (English / Japanese)

NEC 10F

Abstract: low-noise L-band tuner nec mmic Monolithic Amplifier NEC JAPAN TRANSISTORS 1981 nec book
Contextual Info: just imagine NEC MUL TI MEDI A NESAT PROCESS nan By utilizing the NESAT NEC Silicon Advanced Technology process, NEC realizes low-noise silicon transistors, high-perform ance silicon m onolithic integrated circuits, as well as in the super high-frequency range high reliability.

NEC Ga FET marking L

Abstract: tamagawa gaas fet marking B mmic amplifier marking code N5 NE272 FET marking code .N5 ne29200 NE23383B NE292 gaas fet marking a
Contextual Info: GET-30749, Revision C NEC NEC Corporation Tamagawa Plant 1753,Shimonumabe, Nakahara-lcu, Kawasaki, Kanagawa, 211-8666 Specification Control Drawing o f Grade L GaAs Devices fo r Satellite Applications Prepared on: September 28,2000 Prepared by: Masahito Kushima

NE1069L-4B

Abstract: NE710
Contextual Info: NEC/ CALIFORNIA t4S741M 1SE D NEC r-37'?0 00DlSb3 2 4W, L-S BAND POWER GaAs MESFET NE1069L-4B OUTLINE DIMENSIONS Units in mm FEATURES • CLASS A OPERATION OUTLINE T-38 • HIGH POWER OUTPUT • HIGH GAIN • HIGH POWER ADDED EFFICIENCY • HIGH RELIABILITY

Contextual Info: I ^ NEC • NEC Corporation GaAs MMIC UPG100B,P Low Noise Wide Band Amplifier PHYSICAL DIMENSIONS FEATURES Units in mm UPG100B • ULTRA WIDE BAND: 50 MHz to 3 GHz 1.27 ± 0.1 • LOW NOISE: 2.7 dB TYP at f = 50 MHz to 3 GHz (LEADS 2,4,6,8) 0.6 1.27 + 0.1

2SK571

Abstract: NE720 NE72084 NE72000 NE72089 2SK571 equivalent ga 132 2SK57-1
Contextual Info: NEC/ b427mM QQ022TD 317 «NE CC SbE D CALIFORNIA NEC GENERAL PURPOSE GaAs MESFET NE720 SERIES OUTLINE DIMENSIONS FEATURES • LOW COST Units in mm NE72000 (CHIP) (Units In pm) • LOW NOISE FIGURE 0.8 dB at 4 GHz 1.7 dB at 8 GHz i 35 • HIGH ASSOCIATED GAIN

UPG100B

Abstract: UPG100 UPG100P power amplifier s band ghz mhz Low Noise Amplifier 0.5 - 3.0 GHz
Contextual Info: I NEC • NEC Corporation GaAs MMIC UPG100B,P Low Noise Wide Band Amplifier PHYSICAL DIMENSIONS FEATURES UPG100B • ULTRA WIDE BAND: 50 MHz to 3 GHz 1.27 + 0.1 • LOW IMOISE: 2.7 dB TYP at f = 50 MHz to 3 GHz Units in mm 1.27 ± 0-1 0 A {LEAD S 1,3,5,7)

PA101B

Abstract: PA103 PA104 MICRO-X TRANSISTOR MARK Q6 4 npn transistor ic 14pin upa101g PA102B UPA101 P10944EJ2V0AN00
Contextual Info: Application Note HIGH FREQUENCY NPN TRANSISTOR ARRAYS µPA101 µPA102 µPA103 µPA104 Document No. P10944EJ2V0AN00 2nd edition Date Published November 1999 N CP(K) Printed in Japan 1995, 1999 NESAT (NEC Silicon Advanced Technology) is a trademark of NEC Corporation.

2SK281

Abstract: 203l2 NE218 NE21889 NE21800
Contextual Info: NEC/ L427414 OOOlblH Q 1SE D CALIFORNIA NEC T - 3 ,h lS LOW NOISE X-BAND G aAs MESFET NE21800 NE21889 FEATURES DESCRIPTION AND APPLICATIONS • V E R Y H IG H fmax: 60 G H z The NE218 is a 1 pm recessed gate gallium arsenide GaAs n-channel field effect transistor (FET). Offering low noise figure

2SK425

Abstract: 2sk423 2SK424 2SK530 2SK422 2SK426 2SK407 2SK425-13 2SK428 2SK433
Contextual Info: A f m s 2SK406 2SK407 2SK408 2SK409 2SK410 2SK411 2SK412 2SK413 2SK414 2SK415 2SK416 L (S) 2SK417 2SK418 2SK419 2SK420 2SK421 2SK422 2SK423 2SK424 2SK425 2SK426 2SK427 2SK428 2SK429(L)(S) 2SK430(L) (S) 2SK431 ' 2SK433 2SK435 2SK436 2SK437 a NEC NEC U aL BÍL

NEC RELAY

Abstract: transister NEC fet nec V830 mcu NEC Rambus NEC V810
Contextual Info: NEC 半導体データ・ブック一覧表 NEC 半導体データ・ブック CD-ROM 一覧表（1999 年 4 月現在） 現在，NEC では下記の半導体データ・ブック CD-ROM を発行しています。 最寄りの NEC 半導体販売窓口までご請求ください。

2SK571

Abstract: ne72089 ne72084 NE72000 NE72089A 2SK354A 2SK571 equivalent 2SK57-1 NE720 NE7200
Contextual Info: NEC/ bM274m SbE D CALIFORNIA NEC OQOaa^D 3*^7 BINEC C T - 3 ,\- z £ GENERAL PURPOSE G aAs MESFET NE720 SERIES OUTLINE DIMENSIONS FEATURES • LO W C O S T Units in mm NE72000 (CHIP) (Units In pm) • LO W N O IS E PIQURE 100- • 0.8 dB at 4 GHz 1.7 dB at 8 GHz

6-pin optocoupler

Contextual Info: NEC LONG CREEPAGE TYPE HIGH ISOLATION VOLTAGE 6 PIN OPTOCOUPLER PS2651 PS2652L2 FEATURES_ DESCRIPTION_ • PS2651 and PS2652 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor

Contextual Info: N E C ELECTRONICS INC NEC • 6427525 N E C ~72 ELECTRONICS 72C 09235 INCi D '_TL^ ± r.^ L D F | b 4 5 7 S a S OODTSHS J 4N25 PHOTO COUPLER s in g le t r a n s i s t o r : NEC Electronics Inc. NEPOC SERIES Description Features The' 4N25 is an optically coupled isolator containing a

nec 1441

Contextual Info: DATA SHEET_ NEC GaAs INTEGRATED CIRCUIT iuPG172GV PDC1.5GHZ-VARIABLE GAIN PA DRIVER AMPLIFIER DESCRIPTION ¿iPG172GV is a GaAs FET PA driver amplifier with variable gain function which was developed for PDC Personal Digital Cellular application.

Contextual Info: DATA SHEET NEC PHOTOCOUPLER PS2653,PS2654,PS2653L2,PS2654L2 LONG CREEPAGE TYPE HIGH ISOLATION VOLTAGE 6-PIN PHOTOCOUPLER -NEPOC Series- DESCRIPTION The PS2653, PS2654, PS2653L2, PS2564L2 are optically coupled isolators containing a GaAs light emitting diode

Contextual Info: DATA SHEET NEC PHOTOCOUPLER PS2607,PS2608,PS2607L,PS2608L HIGH ISOLATION VOLTAGE AC INPUT, HIGH CTR 6-PIN PHOTOCOUPLER -NEPOC Series- DESCRIPTION The PS2607, PS2608, PS2607L, PS2608L are optically coupled isolators containing GaAs light emitting diodes

Contextual Info: DATA SHEET_ NEC GaAs INTEGRATED CIRCUIT uPG152TA L-BAND SPDT SWITCH DESCRIPTION The ¿iPG152TA is an L-band SPDT Single Pole Double Throw GaAs FET switch which was developed for digital cellular or cordless telephone application.

Contextual Info: DATA SHEET_ NEC GaAs INTEGRATED CIRCUIT uPG152TA L-BAND SPDT SWITCH DESCRIPTION The ¿iPG152TA is an L-band SPDT Single Pole Double Throw GaAs FET switch which was developed for digital cellular or cordless telephone application.

2SJ83

Abstract: 2SK238 2SJ82 2SK241 2SK240 2SK203 2SK220 2S119 2SK197 2SK198
Contextual Info: - 38 - * . 1 fr K ft f M € tí: € 2SK197 B ÍL B ÍL 2SK198 tñ“ F 2 SK196 H 2SK199 2SK201 NEC 2SK203 NEC 2SK208 m m m £ 4 -k % Vg s * X V* m (V) * (V) 800m 2m 120 0.2 -2 10 10m G 150m -lOn -0.5 2m 14m 10 -0.3 -4 10 LF A J N D -30 GDO 10m G 150m

Nec 1441

Contextual Info: DATA SHEET_ NEC GaAs INTEGRATED CIRCUIT ¿iPG172GV PDC1.5GHZ-VARIABLE GAIN PA DRIVER AMPLIFIER DESCRIPTION //PG 172G V is a GaAs FET PA driver amplifier with variable gain function which was developed for PDC Personal Digital Cellular application.