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    Burr-Brown Corp OPA102BM

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    Bristol Electronics OPA102BM 4
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    Littelfuse Inc 30KPA102-B

    Trans Voltage Suppressor Diode, 30000W, 102V V(RWM), Unidirectional, 1 Element, Silicon
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    Vyrian 30KPA102-B 10,749
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    PA102B Datasheets Context Search

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    PA101B

    Abstract: PA103 PA104 MICRO-X TRANSISTOR MARK Q6 4 npn transistor ic 14pin upa101g PA102B UPA101 P10944EJ2V0AN00
    Contextual Info: Application Note HIGH FREQUENCY NPN TRANSISTOR ARRAYS µPA101 µPA102 µPA103 µPA104 Document No. P10944EJ2V0AN00 2nd edition Date Published November 1999 N CP(K) Printed in Japan 1995, 1999 NESAT (NEC Silicon Advanced Technology) is a trademark of NEC Corporation.


    Original     		pa101pa102pa103pa104+7p10944ej2v0an00pa101bmicro-x transistor mark q64 npn transistor ic 14pinupa101gpa102bupa101 PDF

    Contextual Info: DATA SHEET NEC COMPOUND TRANSISTOR _jfPA102 HIGH FREQUENCY NPN TRANSISTOR ARRAY OUTLINE DIMENSIONS Units in mm FEATURES • TW O BUILT-IN DIFFER EN TIA L AM PLIFIER CIRCUITS: • OUTSTANDING hFE LINEARITY • TW O PACKAGE O PTIO NS: (Each Transistor has fr 9 GHz)


    OCR Scan     		upa102pa102bpa102g14-pin+1pa102 PDF