FLU17 Search Results

EUDYNA

Contextual Info: FLU17XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB=32.5dBm Typ. • High Gain: G1dB=13.5dB (Typ.) • High PAE: ηadd=46% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU17XM is a GaAs FET designed for base station applications in the

Contextual Info: FLU17ZME1 L-Band Medium & High Power GaAs FET FEATURES High Output Power: P1dB=32.5dBm typ. High Gain: G1dB=12.5dB(typ.) Low Cost Plastic(SMT) Package Tape and Reel Available DESCRIPTION The FLU17ZME1 is a GaAs FET designed for base station and CPE application up to a 4.0GHz frequency range. This is a new product

FLU17XM

Contextual Info: FLU17XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB=32.5dBm Typ. • High Gain: G1dB=13.5dB (Typ.) • High PAE: ηadd=46% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU17XM is a GaAs FET designed for base station applications in the

Contextual Info: • flU1725 GG774C15 fl ■ 1 SN74BCT2827A, SN74BCT2828A 10-BIT BUSfMOS MEMORY DRIVERS WITH 3-STATE OUTPUTS D 2 9 7 7 , APRIL 1 9 8 7 -R Ê V IS E D APRIL 1 9 8 8 5SE D DW OR NT PACKAGE TOP VIEW BICMOS Design Substantially Reduces Standby Current 25-0 Series Resistors at Outputs

RM4136

Abstract: RC4136N RC4136 RC4136D RM4136FK RV4136 RV4136D RV4136J RV4136N FK800
Contextual Info: TEXAS INSTR LIN /IN TFC lflE D • flU17a4 0077S44 T RM4136, RV4136, RC4136 QUAD HIGH-PERFORMANCE OPERATIONAL AMPLIFIERS T -1 9 '0$~ HO NOTICE , S E E ORDER OF DATA FOR ER RA TA _ D2148, MARCH 1978-REVISED NOVEMBER 1988 IN FO RM ATIO N RM4136 . . . J OR W PACKAGE

Contextual Info: FLU17XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB=32.5dBm Typ. • High Gain: G1dB=13.5dB (Typ.) • High PAE: ηadd=46% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU17XM is a GaAs FET designed for base station applications in the

IM320

Abstract: fujitsu flu fujitsu gaas fet L-band
Contextual Info: FLU17ZM L-Band Medium & High Power GaAs FET FEATURES ・High Output Power: P1dB=32.5dBm typ. ・High Gain: G1dB=12.5dB(typ.) ・Low Cost Plastic(SMT) Package ・Tape and Reel Available DESCRIPTION The FLU17ZM is a GaAs FET designed for base station and CPE

FLU17XM

Contextual Info: FLU17XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB=32.5dBm Typ. • High Gain: G1dB=13.5dB (Typ.) • High PAE: ηadd=46% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU17XM is a GaAs FET designed for base station applications in the

Contextual Info: FLU17XM L - B an d M edium & High Power GaAs FETs ABSOLUTE MAXIMUM RATINGS Ambient Temperature Ta=25°C Hem Symbol Condition Rating Unit Drain-Source Voltage Vd S 15 V Gate-Source Voltage vgs -5 V 7.5 w °c °c Total Power Dissipation Tc = 25°C PT Storage Temperature

Contextual Info: FLU17XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB=32.5dBm Typ. • High Gain: G1dB=13.5dB (Typ.) • High PAE: hadd=46% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU17XM is a GaAs FET designed for base station applications in the

Contextual Info: FLU17XM L-Band Medium & High Power GaAs FETs FEATURES • High Output Power: P1dB=32.5dBm Typ. • High Gain: G1dB=13.5dB (Typ.) • High PAE: hadd=46% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU17XM is a GaAs FET designed for base station applications in the

FLU17ZM

Abstract: ED-4701 SM 1628
Contextual Info: FLU17ZM L-Band Medium & High Power GaAs FET FEATURES ・High Output Power: P1dB=32.5dBm typ. ・High Gain: G1dB=12.5dB(typ.) ・Low Cost Plastic(SMT) Package ・Tape and Reel Available DESCRIPTION The FLU17ZM is a GaAs FET designed for base station and CPE

FLU17XM

Contextual Info: FLU17XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P-|C|g=32.5dBnn Typ. • High Gain: G-|C|g=13.5dB (Typ.) • High PAE: r iadd=46% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU17XM is a GaAs FET designed for base station applications in the

20GHz

Abstract: FLU17XM
Contextual Info: FLU17XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB=32.5dBm Typ. • High Gain: G1dB=13.5dB (Typ.) • High PAE: ηadd=46% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU17XM is a GaAs FET designed for base station applications in the

HAI 7203

Abstract: ACT8847 74ACT8847 SN74 multiplier
Contextual Info: TEXAS INSTR LOGIC SSE D 0^1723 GQÖS7G3 7 SN74ACT8847 64-Bit Floating Point Unit • Meets IEEE Standard for Single- and DoublePrecision Formats • Performs Floating Point and Integer Add, Subtract, Multiply, Divide, Square Root, and Compare • 64-Bit IEEE Divide in 11 Cycles, 64-Bit Square

1971-REVISED

Abstract: 521 opto phototransistor array TIL135
Contextual Info: TEXAS INSTR OPTO BSE D flcit il7 2 t i 0Q7SSb0 3 TIL134 THRU TIL136 12-ELEMENT ARRAYS AND 12-CHANNEL PAIR D1093.SEPT6MBER 1971—REVISED SEPTEMBER 1989 TIL134 . . . 12-ELEMENT GALLIUM ARSENIDE IRED ARRAY TIL135 . . . 12-ELEMENT PHOTOTRANSISTOR ARRAY TIL136. . . 12-CHANNEL PAIR

Contextual Info: TE XA S INSTR 2S E A S I C / M E M O R Y D • 0^1725 □□77TÖ0 T ■ MPR68C64, MPR68CT64 8192-W ORD BY 8-BIT RAD IATIO N-H AR D ENED STATIC RAMs D3363, OCTOBER 1989 • • 28-PIN PACKAGE 8192 x 8 Organization Silicon-on-lnsulator (SIMOX) for Extreme

FLL105

Abstract: FLL55 FLL300-1 FLL300-2 FLL101 fll171 FLL200-3 "FLL105" FLL-300-1 FLK202
Contextual Info: SELECTION GRAPHS Output Power at 1dB Gain Compression dBm GaAs FETs CHIPS c o "co CO CD CL E o O ç aj CD m "D o $ o CL "3 Q. "3 O Frequency (GHz) Fufrsu Selection Graphs 1 1997 Microwave Databook SELECTION GRAPHS HEMTs 16 10 Associated Gain 12 (dB) 14 CÛ

16-Bit Microprocessors

Abstract: 16-1 multiplexer explain d54j YJ 1100 6
Contextual Info: TEXAS INSTR LOGIC 1ÔE D • 0^1723 GGa023b T B SN74ACT29C116A, SN74ACT29C116-1 16-BIT MICROPROCESSORS D3219, FEBRUARY 1989 • 1 /tm EPIC (Enhanced Performance Implanted CMOS) CMOS Technology • 3 2 x 1 6-Bit Register File Can Be W ritten and Read During a Single Cycle

FLL55

Abstract: FLL171ME FLL101ME FLL120MK FLC253MH-6 FLU10XM fll300ip-2 flu10 fll171 FLL351ME
Contextual Info: POWER GaAs FETs Electrical Characteristics Ta =25°C PidB TYP. (dB) GidB TYP. (dB) Mattel TYP. (dB) 1 (GHz) Vos (V) (mA) •FLU10XM 29.5 13.5 47 2.0 10 •FLU17XM 32.5 12.5 46 2.0 •FLU35XM 35.5 11.5 46 FLL101ME 29.5 13.5 FLL171ME 32.5 FLL351ME Rth TYP.

TMS27256

Contextual Info: T TE XA S INS TR UC/UP 2SE D 0^1722 QGV'ìSMT I TMS370CX32 8 -BIT MICROCONTROLLERS T -V 7 -/7 -0 * FEBRUARY 1990 • • TMS370 Configured Microcontroller — PACT Module — A/D Module — Data EEPROM Module FN AND FJ PACKAGES (TOP VIEW) LU (/} 00 S f f l l O ' f O N i - Q r lu a . Û . O L Q . £ L C L Q . a . > < Û tr o o o o o o o o P o

74AC11873

Contextual Info: TEXAS INSTR LOGIC 31E 3> ^ , 1/ 1 2 3 o a a ^ a s D a 54AC11873, 74AC11873 DUAL 4-BIT D-TYPE LATCHES WITH 3-STATE OUTPUTS ,v , 3-State Buffer-Type Outputs Drive Bus Lines Directly Bus-Structured Pinout Flow-Through Architecture to Optimize PCB Layout 7 _T10167— D3398, MARCH 1990

FLC301XP

Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171
Contextual Info: APPLICATION NOTES II. FET CHIPS A. REMOVAL OF GaAs FET AND HEMT CHIPS FROM SHIPPING CONTAINERS 1 REQUIREMENTS Anti-static work surface Grounding cable and wrist Metal tweezers or vacuum Clean container to receive Binocular microscope with strap probe transferred chips

ccd Linear Sensor identification

Abstract: tri linear CCD
Contextual Info: TEXAS INSTR OPTO 5SE D • fiTbl?2b 0075bb1 3 ■ TC102A 128 x 1 CCD LINEAR IMAGE SENSOR D3430, MARCH 1990 T -V /-5 5 SIDE-BRAZED PACKAGE (TOP VIEW) 128 x 1 Sensor Element Organization Virtual-Phase N-Channel Silicon MOS Technology KJ V r e f 1Z High Quantum Efficiency