Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    FHX13LG Search Results

    FHX13LG Datasheets (2)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FHX13LG
    		Eudyna Devices Super Low Noise HEMT Original PDF 86.2KB 6
    FHX13LG-E1
    		Fujitsu TRANS JFET N-CH 3.5V 60MA 4SMT Original PDF 86.08KB 6

    FHX13LG Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    FHX13LP

    Abstract: FHX14LP transistor fhx 35 lp FHX13LG FHX13 fujitsu hemt FHX14LG Z150 low noise hemt transistor low noise hemt
    Contextual Info: FHX13LG/LP, 14LG/LP Super Low Noise HEMT FEATURES • Low Noise Figure: 0.45dB Typ. @f=12GHz (FHX13) • High Associated Gain: 13.0dB (Typ.)@f=12GHz • Lg s 0.15|iim, Wg = 200|iim • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package


    OCR Scan     		FHX13LG/LP, 14LG/LP 12GHz FHX13) 2-18GHz FCSI0598M200 FHX13LP FHX14LP transistor fhx 35 lp FHX13LG FHX13 fujitsu hemt FHX14LG Z150 low noise hemt transistor low noise hemt PDF

    Eudyna Packaging

    Contextual Info: FHX13LG, FHX14LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.45dB Typ. @f=12GHz (FHX13) • High Associated Gain: 13.0dB (Typ.)@f=12GHz • Lg ≤ 0.15µm, Wg = 200µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package


    Original     		FHX13LG, FHX14LG 12GHz FHX13) FHX14LG 2-18GHz Eudyna Packaging PDF

    FHX13LP

    Abstract: FHX14lp FHX13LG
    Contextual Info: FHX13LG/LP, 14LG/LP Super Low Noise HEMT FEATURES • Low Noise Figure: 0.45dB Typ. @f=12GHz (FHX13) • High Associated Gain: 13.0dB (Typ.)@f=12GHz • Lg ² 0.15µm, Wg = 200µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package


    Original     		FHX13LG/LP, 14LG/LP 12GHz FHX13) FHX14LG/LP 2-18GHz FCSI0598M200 FHX13LP FHX14lp FHX13LG PDF

    15A03

    Contextual Info: FHX13LG, FHX14LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.45dB Typ. @f=12GHz (FHX13) • High Associated Gain: 13.0dB (Typ.)@f=12GHz • Lg ≤ 0.15µm, Wg = 200µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package


    Original     		FHX13LG, FHX14LG 12GHz FHX13) FHX14LG 2-18GHz 15A03 PDF

    FHX13LG

    Abstract: FHX13 FHX14LG
    Contextual Info: FHX13LG, FHX14LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.45dB Typ. @f=12GHz (FHX13) • High Associated Gain: 13.0dB (Typ.)@f=12GHz • Lg ≤ 0.15µm, Wg = 200µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package


    Original     		FHX13LG, FHX14LG 12GHz FHX13) FHX14LG 2-18GHz FHX13LG FHX13 PDF

    low noise hemt

    Abstract: FHX13LG FHX*LG low noise hemt transistor FHX13 FHX14LG
    Contextual Info: FHX13LG, FHX14LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.45dB Typ. @f=12GHz (FHX13) • High Associated Gain: 13.0dB (Typ.)@f=12GHz • Lg ≤ 0.15µm, Wg = 200µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package


    Original     		FHX13LG, FHX14LG 12GHz FHX13) FHX14LG 2-18GHz low noise hemt FHX13LG FHX*LG low noise hemt transistor FHX13 PDF

    FHX13LG

    Abstract: fujitsu hemt FHX13 FHX14LG
    Contextual Info: FHX13LG, FHX14LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.45dB Typ. @f=12GHz (FHX13) • High Associated Gain: 13.0dB (Typ.)@f=12GHz • Lg ≤ 0.15µm, Wg = 200µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package


    Original     		FHX13LG, FHX14LG 12GHz FHX13) FHX14LG 2-18GHz FCSI0598M200 FHX13LG fujitsu hemt FHX13 PDF

    FSX52WF

    Abstract: GaAs HEMTs X band FSX017LG FHX05LG fhx06lg FSU01LG
    Contextual Info: LOW NOISE HEMTs Electrical Characteristics Ta = 25°C NF TYP. (dB) Gas TYP. (dB) f (GHz) VDS (V) •os (mA) Package Type Frequency Band FHC40LG* 0.30 15.5 4 2 10 LG/LP C FHX13LG* 0.45 12.5 12 2 10 LG/LP FHX14LG* 0.60 12.5 12 2 10 LG/LP FHX04LG* 0.75 10.5


    OCR Scan     		FHC40LG* FHX13LG* FHX14LG* FHX04LG* FHX05LG* FHX06LG* FHX35LG* FHR02FH FSX52WF GaAs HEMTs X band FSX017LG FHX05LG fhx06lg FSU01LG PDF

    FHX13LG

    Contextual Info: F H X 13 LG, FHX14LG Low Noise HEMT Item Condition Symbol Rating Unit Drain-Source Voltage Vd S 3.5 V Gate-Source Voltage vgs -3.0 V Total Power Dissipation Ptot 180 mW Storage Temperature Tstg -65 t o +175 °C Channel Temperature Tch 175 °C Note Note: Mounted on AI2O3 board 30 x 30 x 0.65mm


    OCR Scan     		FHX14LG FHX13LG PDF

    MRF947T1 equivalent

    Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
    Contextual Info: California Eastern Laboratories CEL / NEC - Complete Cross Reference Manufacturer Part Nbr NEC 2SA1977 NEC 2SA1978 NEC 2SC2351 NEC 2SC3355 NEC 2SC3357 NEC 2SC3545 NEC 2SC3583 NEC 2SC3585 Toshiba Matsushita Matsushita NEC 2SC4093 NEC 2SC4094 NEC 2SC4095 Hitachi


    Original     		2SA1977 2SA1978 2SC2351 2SC3355 2SC3357 2SC3545 2SC3583 2SC3585 2SC4093 2SC4094 MRF947T1 equivalent MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L PDF

    FMC141401-02

    Abstract: fujitsu gaas marking code Fujitsu K022 FLL300-2 FLL55 FSX52WF FUJITSU L101 fujitsu x51 FLL200-2 FLL300-1
    Contextual Info: APPLICATION NOTES I. PACKAGED FETS and MODULES A. HANDLING PREECAUTIONS GaAs FETS are sensitive to electrostatic discharge. Fujitsu ships all GaAs FETs in electrostatic protection packaging. User must pay careful attention to the following precautions when taking


    OCR Scan     		PDF