HEXAWAVE Search Results

0734

Abstract: FET 3878 Z070
Contextual Info: HEXAWAVE HWL36NPC Hexawave, Inc. L-Band Power GaAs FET Description Outline Dimensions The H W L36N PC is a medium Power G aA s FET using H exaw ave proprietary surface mount type plastic package with special heat slug for various L-Band applications. It is suitable for various 9 00 M Hz, 1900

Contextual Info: HEXAWAVE HWP815-6B Hexawave, Inc. UHF Power Module Features • Applicable for Trunking Radio • Frequency : 806 ~ 825 MHz • High Efficiency 58% • 50 ohm Input/Output Impedances • Guaranteed Stability & Ruggedness Maximum Ratings (Tc=25 °c ) Parameters

L 0929

Abstract: s 0934 91564
Contextual Info: HSXAWAVS HWL34YRA L-Band Power GaAs FET Hexawave, Inc. Description Outline Dimensions The HWL34YRA is a Power GaAs FET designed for various L-band & S-band applications. It is presently offered in low cost ceramic package. 1.625 0 .065 Features • Low Cost GaAs Power FET

5964 fet

Contextual Info: HSXAWAVS HWL36YRF Hexawave, Inc. L-Band Power GaAs FET Description Outline Dimensions The HWL36YRF is a Power GaAs FET designed for various L-band & S-band applications. It is presently offered in low cost ceramic package. Features • Low Cost GaAs Po wer FET

s3v 72

Contextual Info: HEXAWAVE HWL23NPB Hexawave, Inc. L-Band Power GaAs FET Description Outline Dimensions The HWL23NPB is a medium Power GaAs FET using surface mount type plastic package for various L-Band applications. It is suitable for various 900 MHz, 1900 MHz cellular/wireless applications.

TC 9147

Abstract: HWC27
Contextual Info: HSXAWAVS HWC27YUB C-Band Medium Power GaAs FET Hexawave, Inc. Description Outline Dimensions The HWC27YUB is a Medium Power GaAs FET employing Hexawave's unique fabrication process. It provides high breakdown voltage and excellent linearity. Features 2 -# 1 .8 *0 .0 1

M3508-20

Contextual Info: HEXAWAVS HW947-1B Hexawave, Inc. 900MHz UHF GaAs FET Power Module Features Applicable for AMPS Cellular Phone Frequency : 824 ~ 849 MHz High Efficiency 50 ohm Input/Output Impedances Guaranteed Stability' & Ruggedness Maximum Ratings Tc=25 °c Parameters

IN 5406

Abstract: F24G 1S121 M 16100 39 2 1019
Contextual Info: Jft, HSXAWAVS Hexawave, Inc. C-Band Non-Via Hole Chip Description The following parts are presently offered in chip form. They are fabricated by Hexawave 0.7^m gate length, nchannel MESFET process, non -via hole device, designed for various C-Band applications.

Contextual Info: M L HcXAWAVE HWP1720-6 Hexawave, Inc. Medium Power GaAs Amplifier Description Block Diagram The HW P1720-6 is a G aAs MMIC amplifier designed for low voltage applications where high efficiency is required. VDDl VDD2 VDD3 The nominal output power is more than 600 mW at 1.9 GHz when

0117 0317

Abstract: 6537 fet
Contextual Info: J R , HEXAWAV5 HWL26NPA Hexawave, Inc. L-Band Power GaAs FET 6/18/98 Description Rev. A Outline Dimensions The H W L26N PA is a m edium Pow er G aA s FET using surface m ount type plastic package for various L -B and applications. It is suitable for various 900

Contextual Info: HSXAWAVE HW900-2A Hexawave, Inc. 900MHz UHF GaAs FET Power Module Features Applicable for ETACS Cellular Phone Frequency : 872 ~ 905 MHz High Efficiency 50 ohm Input/Output Impedances Guaranteed Stability & Ruggedness Maximum Ratings Tc=25 c Parameters

pt 2358

Abstract: 159330 17089
Contextual Info: HWF1681NC HEXAWAVE High Power GaAs FET September 1998 Features • H igh O u tp ut Pow er • H igh G ain • H igh Efficiency • H igh L inearity • Class A o r Class AB O peration Outline Drawing PidB=34.5dBm typ. @2.4GHz Gl= 12dB(typ.)@2.4GHz r|a d d

hwf1682ra

Contextual Info: HWF16S2RA HEXAWAVE High Power GaAs FET September 1998 Rev.B Features • H ig h O u tp u t P o w e r O U T L I N E D R A W IN G P id B = 3 7 d B m ty p . @ 2 .4 G H z • H ig h G a in • H ig h E fficien cy • H ig h L in e a r ity G l=1 1.5dB(typ.)@2.4GHz

Contextual Info: HEXAWAVE HWP1960-8C Hexawave, Inc. GaAs FET Power Module Features • Applicable for PACS and PCS • Frequency 1930 ~ 1990 MHz • High Linearity • 50 ohm Input/Output Impedances • Guaranteed Stability & Ruggedness Maximum Ratings Tc=25 °c Parameters

6681 - 250

Abstract: 2686 0112
Contextual Info: HEXAWAVE HWL27NPB Hexawave, Inc. L-Band Power GaAs FET Description Outline Dimensions The HWL27NPB is a medium Power GaAs FET using surface mount type plastic package for various L-Band applications. It is suitable for various 900 MHz, 1900 MHz cellular/wireless applications.

Contextual Info: HSXAWAVS HWP1840-1C Hexawave, Inc. Power Module Preliminary Features 3/1/97 Rev.1 Outline Drawing F req u en cy : 1.805 ~ 1.870 G H z H ig h L inearity 1.181 27.00 (1 .OK!) (0.059) 1.50 (Ó.059) 50 o h m In p u t/ O u tp u t Im pedances jO k O 35 « niflaximum Ratings

TH 20669

Abstract: TA 8644
Contextual Info: HWF1681YC HEXAWAVE High Power GaAs FET September 1998 Rev. B Features Outline Drawing High Output Power P I <ib = 3 4 . 5dB m typ. @ 2.4G H z High Gain Unit : £ G l = 15dB (typ.)@ 2.4G H z Thickness: 53 \ High Efficiency A ll B ond Pads: gn 5 1 0 0 x 100

max 9694 e

Contextual Info: HBXAWAVE HWC30YUB < 3 ^ Hexawave, Inc. C-Band Medium Power GaAs FET Description Outline Dimensions The HWC30YUB is a Medium Power GaAs FET employing Hexawave's unique fabrication process. It provides high breakdown voltage and excellent linearity. y* 1 Features

177307

Abstract: 70-907
Contextual Info: M *. HEXAWAVS HWL27YRA Hexawave, Inc. L-Band Power GaAs FET Description Outline Dimensions The HWL27YRA is a Medium Power GaAs FET designed for various L-band & S-band applications. It is presently offered in low cost ceramic package. 1,625 0 .065 Features

Contextual Info: HEXAWAVE HW3238 Hexawave, Inc. Power Module Features Outline Drawing • Frequency . 3 .4 ~ 3.8 GHz • High Linearity • 50 ohm Input/ O utput Impedances Maximum Ratings Parameters Tc=25 c Symbol Value Unit DC Supply Voltage V dd 8 V DC Supply Voltage

ms 7616

Abstract: 91564
Contextual Info: J R , HEXAWAVS HWL34YRF Hexawave, Inc. L-Band Power GaAs FET Description Outline Dimensions The HWL34YRF is a Power GaAs FET designed for various L-band & S-band applications. It is presently offered in low cost ceramic package. Features Low Cost G aA s P ow er F E T

Contextual Info: HEXAWAVE HWS2602 GaAs MMIC SPDT Switch Hexawave, Inc. Advanced Description 8/27/97 Rev. 2-1 Full Functional Block Diagram and Pin Connections The Hexawave HWS2602 is an integrated GaAs SPDT Switch designed for transceivers operating in 1MHz to 1000 MHz frequency range.

Contextual Info: Preliminary HW3238C Hexawave, Inc. Power Module 3/16/98 Outline Drawing Features l Frequency : 3.4 ~ 3.6 GHz l High Linearity l 50 ohm Input/ Output Impedances Maximum Ratings TC=25¢ Parameters J Symbol Value Unit DC Supply Voltage VDD 8 V DC Supply Voltage

80247

Contextual Info: HEXAWAVS HWL32NPA Hexawave, Inc. L-Band Power GaAs F ET Outline Dimensions Description The HWL32NPA is a medium Power GaAs FET using surface mount type plastic package for various L-Band applications. It is suitable for various 900 MHz, 1900 MHz MHz cellular/wireless applications.