HWC27 Search Results

TC 9147

Abstract: HWC27
Contextual Info: HSXAWAVS HWC27YUB C-Band Medium Power GaAs FET Hexawave, Inc. Description Outline Dimensions The HWC27YUB is a Medium Power GaAs FET employing Hexawave's unique fabrication process. It provides high breakdown voltage and excellent linearity. Features 2 -# 1 .8 *0 .0 1

Contextual Info: HWC27NC 123456789ABC7DEF7 952 47 9B71 7 Autumn 2002 V1 Features Outline Dimensions • Low Cost GaAs Power FET • Class A or Class AB Operation • 11 dB Typical Gain at 4 GHz • 5V to 10V Operation 650 Source Description 435 1 215 2 3 The HWC27NC is a medium power GaAs FET

PT 4962

Contextual Info: HWC27YC 123456789ABC7DEF7 47 9 B71 7 Autumn 2002 V1 Outline Dimensions Features 650 • Low Cost GaAs Power FET • Class A or Class AB Operation • 18 dB Typical Gain at 2.4GHz • 5V to 10V Operation Source 435 1 215 2 3 Description The HWC27YC is a medium power GaAs FET

IN 5406

Abstract: F24G 1S121 M 16100 39 2 1019
Contextual Info: Jft, HSXAWAVS Hexawave, Inc. C-Band Non-Via Hole Chip Description The following parts are presently offered in chip form. They are fabricated by Hexawave 0.7^m gate length, nchannel MESFET process, non -via hole device, designed for various C-Band applications.