1S121 Search Results

KB-362

Abstract: M8513 KB-265 KB-365 KB-369 M8513A-O HV23G MA27-C MA26W MA27-B
Contextual Info: - ft m « tt £ PSM W 1S464 1S467 1S 1210 1S1211 1S1212 (V) (A) (V) If . IFM* (mA) V F (V) mi n typ 0. 07 0.07 1. 5 1 1 2. 3. 0. 0. 0. 60 58 58 58 1 1 3 2. 0. 0. 0. 0. 64 59 69 62 66 2. 0. 0. 0. 0. 88 65 75 69 72 30 30 30 30 30 1. 1. 1. 1. 1. 18 18 18 24

NEC varistor

Abstract: 1S1209 VD1222 VD1221 1s1211 VD1120 VD1212 NEC green varistor varistor nec VD1220
Contextual Info: NEC SILICON VARISTOR 1S1209 ~ 1S1212 ELECTRON DEVICE VD1120~ VD1223 FEATURES • Silicon D iode V aristor fo r Voltage and S u ita b le fo r vo lta g e and te m p e ra tu re co m p e n sa tio n o f B-class Tem perature Com pensation o f Transistor p u s h -p u ll a m p lifie r.

30g 123

Abstract: M8513A-0 KB-262C4 1S1212 1S1300 1S464 1S467 607D DS430 HSK23
Contextual Info: - ft m « tt £ PSM W 1S464 1S467 1S 1210 1S1211 1S1212 (V) (A) (V) If . IFM* (mA) V F (V) mi n typ 0. 07 0.07 1. 5 1 1 2. 3. 0. 0. 0. 60 58 58 58 1 1 3 2. 0. 0. 0. 0. 64 59 69 62 66 2. 0. 0. 0. 0. 88 65 75 69 72 30 30 30 30 30 1. 1. 1. 1. 1. 18 18 18 24

M8513

Abstract: MA26W KB-362 M8513A-0 KB-262C4 1S464 KP4-8 M8513A-R 1S1212 1S467
Contextual Info: - ft m « tt £ PSM W 1S464 1S467 1S 1210 1S1211 1S1212 1S1300 1S1300 DS430 DV-2 DV-3 DV-4 DY-5 HSK23 HV23G HV123G KB— 469 KB— 162 KB-162C5B KB— 165 KB— 169 KB— 262 KB-262C4 KB-262M KB— 26 5 KB-265C4 KB—269 KB— 362 KB-362M KB— 365 KB— 369

KB-362

Abstract: 1S1300 1S1212 M8513A-0 MA27B KB-362M HV23G DS430 KB-162 KB-262C4
Contextual Info: - ft m « tt £ PSM W 1S464 1S467 1S 1210 1S1211 1S1212 (V) (A) (V) If . IFM* (mA) V F (V) mi n typ 0. 07 0.07 1. 5 1 1 2. 3. 0. 0. 0. 60 58 58 58 1 1 3 2. 0. 0. 0. 0. 64 59 69 62 66 2. 0. 0. 0. 0. 88 65 75 69 72 30 30 30 30 30 1. 1. 1. 1. 1. 18 18 18 24

KB-362

Abstract: M8513 KB-265 M8513A-O HV23G 1S1212 m8513a-r KB-365 KB-369 KP4P8
Contextual Info: - ft m « tt £ PSM W 1S464 1S467 1S 1210 1S1211 1S1212 1S1300 1S1300 DS430 DV-2 DV-3 DV-4 DY-5 HSK23 HV23G HV123G KB— 469 KB— 162 KB-162C5B KB— 165 KB— 169 KB— 262 KB-262C4 KB-262M KB— 26 5 KB-265C4 KB—269 KB— 362 KB-362M KB— 365 KB— 369

KB-365

Abstract: M8513A KB-362 KB-262C4 M8513 M8513A-O MA26W M8513A-0 til 31a 1S1300
Contextual Info: - ft m « tt £ PSM W 1S464 1S467 1S 1210 1S1211 1S1212 1S1300 1S1300 DS430 DV-2 DV-3 DV-4 DY-5 HSK23 HV23G HV123G KB— 469 KB— 162 KB-162C5B KB— 165 KB— 169 KB— 262 KB-262C4 KB-262M KB— 26 5 KB-265C4 KB—269 KB— 362 KB-362M KB— 365 KB— 369

KB-362

Abstract: HV23G 1S467 KB-265 MA26W M8513A-0 KB-365 1S464 m8513a-r 1S1300
Contextual Info: - ft m « tt £ PSM W 1S464 1S467 1S 1210 1S1211 1S1212 (V) (A) (V) If . IFM* (mA) V F (V) mi n typ 0. 07 0.07 1. 5 1 1 2. 3. 0. 0. 0. 60 58 58 58 1 1 3 2. 0. 0. 0. 0. 64 59 69 62 66 2. 0. 0. 0. 0. 88 65 75 69 72 30 30 30 30 30 1. 1. 1. 1. 1. 18 18 18 24

diode oa202

Abstract: IN647 OA200 diode TID125 CA500 1S121 1S131 TID140N BY401 IN645
Contextual Info: Diodes and Arrays Hi Device Case Type Outline 1S111 1S113 1S120 1S121 1S130 1S131 1S132 1S134 1S920 1S921 1S922 1S923 1 S924 O A200 O A202 IN645 IN 646 IN647 BY401 BY402 BY403 BY404 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 D O-7 DO-7 DO-35 DO-35 DO-35 DO-35 D O-35 DO-7

KB-262C4

Abstract: 1S1212 KB-362 1S1300 KB-262 HV23G KB-265 M8513A-0 MA27-B HV123G
Contextual Info: - ft m « tt £ PSM W 1S464 1S467 1S 1210 1S1211 1S1212 (V) (A) (V) If . IFM* (mA) V F (V) mi n typ 0. 07 0.07 1. 5 1 1 2. 3. 0. 0. 0. 60 58 58 58 1 1 3 2. 0. 0. 0. 0. 64 59 69 62 66 2. 0. 0. 0. 0. 88 65 75 69 72 30 30 30 30 30 1. 1. 1. 1. 1. 18 18 18 24

CV7040

Abstract: cv8790 OA202 equivalent BY 225 diode IS920 DO-35 silicon Rectifier diodes CV8617 CV7875 CV7332 10 35 DIODE
Contextual Info: Diodes and Arrays Hi Device Case Type Outline 1S111 1S113 1S120 1S121 1S130 1S131 1S132 1S134 1S920 1S921 1S922 1S923 1 S924 O A200 O A202 IN645 IN 646 IN647 BY401 BY402 BY403 BY404 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 D O-7 DO-7 DO-35 DO-35 DO-35 DO-35 D O-35 DO-7

Contextual Info: Thyristors - SCR's. The plastic material carne« U/L recognition 94 V-O. Max. Repetitive Maximum RMS Peak Off - State On * State Current and Reverse atTc » 50 °C TYPE Voltage V drm & VRJtM It r m s (A) (V) Maximum Peak Surge On - State Current ( Note 1 )

Motorola transistors MRF 947

Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that

SVI 3104 c

Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or

IN 5406

Abstract: F24G 1S121 M 16100 39 2 1019
Contextual Info: Jft, HSXAWAVS Hexawave, Inc. C-Band Non-Via Hole Chip Description The following parts are presently offered in chip form. They are fabricated by Hexawave 0.7^m gate length, nchannel MESFET process, non -via hole device, designed for various C-Band applications.

IVA14208ST

Contextual Info: • 4447504 D01D332 T23 H H P A HEWLETT-PACKARD/ CMPNTS blE D W A ffi H E W LETT 1 "H A P A CK A R D Silicon Bipolar MMIC 2.5 GHz Variable Gain Amplifier Technical Data IVA-14208 IVA-14228 Features • Differential Input and Output Capability • DC to 2.5 GHz Bandwidth;

Contextual Info: W/ml mLtiM H EW LETT PACKARD Silicon Bipolar MMIC 1.5 GHz Variable Gain Amplifier Technical Data IVA-05128 Features • 50 MHz to 1.5 GHz Bandw idth • D ata R ates up to 2.0 Gbit/s • H igh Gain: 26 dB Typical • Wide Gain Control Range: 30 dB typical

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

chw marking sot23

Abstract: sps 1951 transistor trimmer electron 3296 bw 9028 transistor smd marking BA rn ph 4148 zener diode
Contextual Info: Contents at a Glance VOLUME I Device Index Alphanumeric . . viii Chapter One Selector G u id e . 1.1-1 Chapter Two RF Monolithic Integrated C ircu

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200

NE202 circuit

Abstract: NE202 NE20200 NE20248 NE20283A NE202XX 1400 88 pm BH574
Contextual Info: L NEC N E C / 1SE D CALIFORNIA • b427414 OQOISÌO T'3l -¿S' S ULTRA LOW NOISE K-BAND HETERO JUNCTION FET NE202 SERIES OUTLINE DIMENSIONS FEATURES • LOW NOISE FIGURE: 1 dB TYP at f = 12 GHz NE202XX 1.2 dB TYP at f = 12 GHz (NE202XX-1.4) 1.8 dB TYP at f = 18 GHz (NE20248)

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF949T1 NPN Silicon Low Noise Transistors Motorola's M R F 9 4 9 is a high perform ance N P N transistor designed for use in high gain, low noise sm all-signal amplifiers. T h e M R F 9 4 9 is well suited for low

NE70083

Abstract: 2SK353 DS 3107 NE700 2sk mesfet 1S121 2sk 353
Contextual Info: N E C / CALIFORNIA 1SE NEC D fa427414 O G O l b S l 1 T - 3 1-2 5 " LOW NOISE Ku-K BAND GaAs MESFET NE700 SERIES FEATURES DESCRIPTION AND APPLICATIONS • LOW C O S T The NE700 is a low cost GaAs FET featuring low noise figures and high associated gains thru 18 GHz.

Contextual Info: • 4447SÔ4 0010304 ObT ■¡HPA HEWLETT-PA CKAR D/ CMPNTS blE D T fìm m L'lim H E W LE T T P a c k a rd Silicon Bipolar Monolithic Variable Gain Amplifier Technical Data HFVA-0180 Features • 3 dB Bandwidth: DC to 2.5 GHz • Temperature Compensated Bias