ZENER 2V7
Abstract: J 2N3055 2n3055 general purpose 2n3055 transistors J1N4150 J-BDX64 1N457/A 4446 BDX66 BZX85 C27
Contextual Info: chips/pastilles power transistors transistors de puissance THOMSON-CSF P Types h2i E VCE min. NPN W PNP 117 117 60 90 117 J-2N3055 J-BDX J-BDX J-BDX J-BDX 53 63 65 67 J-BDX18 J-BDX54 J-BDX62 J-BDX64 J-BDX66 ISO (V) 45 60 60 60 20 20 750 1000 1000 1000 60
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j-2n3055j-bdx18j-bdx54j-bdx62+12j-bdx64j-bdx66j-1n457zener 2v7j 2n30552n3055general purpose 2n3055 transistorsj1n41501n457/a4446bdx66bzx85 c27
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MJ2955
Abstract: MJ2955 300 watts amplifier BDX18 bdx18 me distan U007 L100 J BDX18 33z3
Contextual Info: G E SOLID STATE 3875081 G E SOL ID S TATE Pro Electron Power Transistors _ 01 ]>F| 3fl7S0fll 0017557 T 01Ë" 17557 D r - i J ' - 2-? BDX18, MJ2955 Silicon P-N-P Epitaxial-Base High-Power Transistors File Number 994 TERMINAL DESIGNATIONS Rugged, Broadly A pplicable Devices
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bdx18mj2955o-220abrca-bdx18+11mj295s92cs-2001lector-to-emitter290q7mj2955 300 watts amplifierbdx18 medistanu007l100j bdx1833z3
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BDX18
Abstract: J BDX18
Contextual Info: BDX18 BDX18 PNP POWER TRANSISTOR Power Linear and Switching Applications |-—B—1 5 2 Z UJ CE D— " » ^S p < • 05 c1, Q co zui 2 □ Z , I DIM A B C D E F C H J K L M MIN MAX 39,37 22,22 8,50 6,35 1.09 0,96 1,77 29,90 30,4 10,69 11,18 5,72 5,20 16,64 17,15
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MJ2955
Abstract: BDX18 J BDX18 BDX18A
Contextual Info: G E SOLID STATE 38 75 081 01 G E SOL ID S TATE Pro Electron Power Transistors _ ]>F| 3fl7S0fll 0017557 T 0 1 Ë" 17557 D r - i J ' - 2-? BDX18, MJ2955 File Number Silicon P -N -P Epitaxial-Base High-Pow er Transistors 994 TERMINAL DESIGNATIONS R u g g e d , B ro ad ly A p p lic a b le D evices
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bdx18mj2955o-220abrca-bdx18+2j bdx18bdx18a
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mj2955 TO-220
Abstract: 2N3055 TO-220 MJ2955 BDX54S BDX18 2N3055 TO-3 4116-4 bdw21 BDX88b crimson 5110
Contextual Info: CRIMSON SEM IC ONDUC TO R INC d F | asm C H b 2514096 CRIMSON SEMICONDUCTOR 99D 00 33 4 INC D 7 EPITAXIAL BASE - TO -220 continued I ' j " NPN PNP TIP121 TIP122 TIP130 TIP131 TIP132 2N6121 2N6122 2N6123 2N6288 2N6290 2N6292 2N6386 2N6387 2N6388 2N6486 2N6487
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o-2207--33l-etip121tip126+15tip122tip127tip130tip135tip131mj2955 to-2202n3055 to-220mj2955bdx54sbdx182n3055 to-34116-4bdw21bdx88bcrimson 5110
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2N3055HV
Abstract: BDY38 BDX18 2N3055 2N3773 2N4347 2N6253 2N6257 2N6371 2N6371HV
Contextual Info: TO-3 : DIM A B C D E F G H J K L M r 'i 7 r 0 — 41— MIN ; MAX 39,37 22,22 8,50 1.09 1,77 30,4 11,18 5,72 17,15 12,25 26,67 4,19 - 6,35 0,96 29,90 10,69 5,20 16,64 11,15 - 3,84 PIN CONFIGURATION 1. BASE 2. EMITTER 3. COLLECTOR ALL DIMENSIONS ARE IN M.M.
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2n30552n3500csd1168q000131e+11bdx18cdp055mj29552n3055hvbdy382n37732n43472n62532n62572n63712n6371hv
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BDY38
Abstract: BDY55 2N305S 2N3773 CDIL BDY20 2N3055 2N3773 2N4347 2N6257 2N6371
Contextual Info: TO-3 DIM A B C D E F G H J K L M t. r'i 0 —4 1 - MIN MAX 39,37 22,22 8,50 1.09 1.77 30,4 11,18 5,72 17,15 12,25 26,67 4,19 - 6,35 0,96 29.90 10,69 5,20 16,64 11,15 - 3,84 PIN CONFIGURATION 1. BASE 2. EMITTER 3. COLLECTOR ALL DIMENSIONS ARE IN M.M. TO-3 Power Package Transistors NPN
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2n30554168pcsd1168q000131e+12bdx18cdp055mj2955bdy38bdy552n305s2n3773 cdilbdy202n37732n43472n62572n6371
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MJ2955
Abstract: bdx18
Contextual Info: File Number HARRI S BDX18, MJ2955 994 SEMICOND SECTOR 5bE » Silicon P-N-P EpitaxialHigh-Power Transistors 430 2 27 1 0040bflfl T4T H H A S 7 =3 3 -? - 3 TERMINAL DESIGNATIONS Rugged, Broadly Applicable Devices For Industrial and Commercial Use Features: • High dissipation capability
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bdx18mj29550040bflflrca-bdx18+292cm-3d559ri2cs-29005
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mj2955
Abstract: TH 2267 j2955 BOX18 TY 2267 MJ295S BDX18
Contextual Info: File Number BDX18, MJ2955 994 Silicon P-N-P Epitaxial-Base High-Power Transistors TERMINAL DESIGNATIONS Rugged, Broadly Applicable Devices For Industrial and Com m ercial Use Features: • High dissipation capability ■ Low saturation voltages • Maximum safe-area-of-operation
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bdx18mj2955rca-bdx18box18+7j295592cs-2900592cs-2900692cs-29007th 2267ty 2267mj295s
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SM2174
Abstract: SM2184 2N3055H MOTOROLA 2SD878 mj2955 TO-218 BDY73 BD130 BDY20 2SD151 2SA1042
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO on PD Max hFE *T ON) Min (Hz) >CBO t0N r Max Max (A) (8) Max (Ohms) (CE)sat Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . . .15
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bdt56bdt58bd907bd908+12mje1291mje1661sm2174sm21842n3055h motorola2sd878mj2955 to-218bdy73bd130bdy202sd1512sa1042
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axial zener diodes marking code c3v6
Abstract: H 48 zener diode ZENER DIODES CODE ID CHART diode zener ph c5v6 74151N HS7030 sescosem SESCOSEM semiconductor diode zener BZX 61 C 10 BZX 460 zener diode
Contextual Info: SESCOSEM Introduction Sescosem, Societe Europeenne de Semiconducteurs et de Microelectronique, is a branch of the Thomson-CSF Group, one of the world’s largest High Technology combines which includes Ducati Microfaro, LCC-CICE, COFELEC and many other companies.
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br805abr81abr82abr84a+16br86abr88abr91abr92abr94abr96aaxial zener diodes marking code c3v6h 48 zener diodezener diodes code id chartdiode zener ph c5v674151nhs7030sescosemsescosem semiconductordiode zener bzx 61 c 10bzx 460 zener diode
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SN76477
Abstract: TNY 176 PN EQUIVALENT 2n4401 free transistor equivalent book tis43 XR2206 application notes Semiconductor Data Handbook mj802 2N3866 s2p bc149c TIP35C TIP36C sub amplifier circuit diagram LM131
Contextual Info: From the Publishers of ETI & HE HEM M iNqs E U c t r o n ic s L rd Electronic C om ponents Et M icrocom puters 16 BRAND STREET, HITCHIN, HERTS, SG5 1JE Telephone: 0462 33031 memories 2114L 2708 2716 2532 2732 4116 4164 6116P3 6116LP3 •Op 220p 210p 380p
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2114l6116p36116lp3ay-3-1270+16ay-3-1350ay-3-8910ay-3-8912ay-5-1230ca3080eca3130esn76477tny 176 pn equivalent2n4401 free transistor equivalent booktis43xr2206 application notessemiconductor data handbook mj8022n3866 s2pbc149ctip35c tip36c sub amplifier circuit diagramlm131
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2n3773 power Amplifier circuit diagrams
Abstract: SCR Handbook, rca HC2000H rca transistor npn a13 B0241C npn transistor RCA 467 40659 triac t6440m RCa T2850D DIAC D3202U
Contextual Info: RCA Power Devices This DATABOOK contains com plete technical information on the full line o f RCA solid-state power devices: power transistors, rf power transistors, power hybrid circuits, triacs, SCR’s, diacs, silicon rectifiers, and rectifier assemblies. A complete
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an-6671g40002n3773 power amplifier circuit diagramsscr handbook, rca+8hc2000hrca transistor npn a13b0241cnpn transistor rca 46740659triac t6440mrca t2850ddiac d3202u
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tic 1260 scr texas
Abstract: TA7265 2N6874 ta7719 2N6058 RCA 40408 transistor 2N2405 bd643 BD647 equivalent 2N3228
Contextual Info: RCA Bipolar Power Devices Table of Contents This DATABOOK contains detailed technical information on the full line of more than 750 RCA bipolar power devices consisting of: power transistors, SURGECTORs, ultra-fast-recovery rectifiers, power hybrid circuits, SCRs, and triacs.
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tic 1260 scr texasta72652n6874ta7719+62n6058rca 40408 transistor2n2405bd643bd647 equivalent2n3228
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APY12
Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
Contextual Info: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP
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edition-1978ausgabe-1978bs3934so-26+12ot-114ns371apy12byy32ac176aey26bav77bby20bd545bbav27transistor kt 209 maf367
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711
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D 5038 Transistor Horizontal
Abstract: amplificateur audio a base de transistor transistor 2n 892 X1 amplificateur BF transistor ST TYN 616 equivalent of transistor bul 38 da bd 317 schema transistor 3055 out hv ESM214 Transistor bdy 58
Contextual Info: POWER TRANSISTORS TRANSISTORS DE PUISSANCE 1975 NPN S ILIC O N TR A N S IS TO R S , D IF F U S E D MESA TR A N S IS TO R S NP N S IL IC IU M , M ESA D IF F U S E S 2N 1209 • LF large signal amplification A m p lific a tio n B F grands signaux - High current switching
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cb-6914f4gd 5038 transistor horizontalamplificateur audio a base de transistor+8transistor 2n 892 x1amplificateur bftransistor st tyn 616equivalent of transistor bul 38 dabd 317 schematransistor 3055 out hvesm214transistor bdy 58
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JE350
Abstract: je180 MJ13004 TP33C BD325 JE172 BDX48 JE340 bd160 BUT55
Contextual Info: INDUSTRY STANDARD SGS-THOMSON BD135 BD136 BD137 BD138 BD139 BD135 BD136 BD137 BD138 BD139 BD140 BD142 BD144 BD157 BD158 BD140 BD159 BD160 BD165 BD166 BD167 BD159 SGS-THOMSON PAGE NEAREST BD157 BD158 2N5878 BD437 BD438 BD439 BD440 BD441 BD442 BD237 BD238 BD168
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bd135bd136bd137bd138+16bd139bd140bd142bd144bd157bd158je350je180mj13004tp33cbd325je172bdx48je340bd160but55
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transistor 2N3906 smd 2A SOT23
Abstract: BC327-40 SMD pin configuration transistor BC547 smd packaging DIAC DB2 BC547 smd packaging bd469 W04M pin configuration A1941 C5198 application notes D1 DB2 Diac w33 SMD sot 23
Contextual Info: Contents Chips/Dice Package Outline Drawings Page # Axial Glass/Plastic Packages Package Outline Drawings Page # … Leaded Plastic Packages Chips/Dice for Diodes 2 DO-35 50 KBPC 60 Chips/Dice for Transistors 2 DO-41 50 KBPC-6 60 Products for CFL/TL Ballasts
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do-35do-41do-15do-201ad+14do-41p200mwod-80cll-34transistor 2n3906 smd 2a sot23bc327-40 smdpin configuration transistor bc547 smd packagingdiac db2bc547 smd packagingbd469w04m pin configurationa1941 c5198 application notesd1 db2 diacw33 smd sot 23
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pin configuration transistor BC547 smd packaging
Abstract: BC547 smd packaging BD469 C2N3904 c5198 CMJE2955T transistor mcr100-8 BC337 TO-92 Generic DIAC DB2 BC337 hie hre hfe
Contextual Info: Quick Reference Data Chip/Dice – Diffused Silicon Wafers Surface Mount Devices Leaded Semiconductor Devices Electronic Manufacturing Services Switching Diodes & Arrays Schottky Barrier Diodes Zener Diodes Rectifiers Small Signal Transistors Medium Power Transistors
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do-35do-41c-1200406-3k+10pin configuration transistor bc547 smd packagingbc547 smd packagingbd469c2n3904c5198cmje2955ttransistor mcr100-8bc337 to-92 genericdiac db2bc337 hie hre hfe
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TDA0161 equivalent
Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:
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tda0161 equivalent1n3393bdx54f equivalentbyt301000+6bux transient voltage suppressorst90r9ua776mhsgs 2n3055transistor morocco mje13007inmos transputer reference manual
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2SD669 equivalent
Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc
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2n66092n37732n66672n6668+13220ab2n63872n63882sd669 equivalentbd801bdy29 equivalentbu1082sc20802sd4362n6021bd345tip122 d-pak package2sd544
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2SC495
Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink
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mjf61072n6107e69369tip73b+16tip74tip74atip74btip75tip75atip75b2sc495nsp41abu108transistor bd614 motorola2sa663bd4122bd661mj1000nsp2100d45vh4 similar
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2N5631 equivalent
Abstract: 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —
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2n56302n60302n56312n6031+102n5631 equivalent2n5630 "cross-referencechomericsbu1082sa1046tip122 tip127 audio ampbu326bu1002sd313 equivalentnpn/tip42c as regulator
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