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    BDY73 Search Results

    BDY73 Datasheets (14)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    BDY73
    Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=50-150 / fT(Hz)=- / Pwr(W)=117 Original PDF 10.97KB 1
    BDY73
    Continental Device India TO-3 Power Package Transistors Scan PDF 241.6KB 3
    BDY73
    Continental Device India Semiconductor Device Data Book 1996 Scan PDF 94.2KB 1
    BDY73
    Continental Device India General Purpose Power Transistors in TO-204AA Package Scan PDF 67.51KB 1
    BDY73
    Continental Device India TO-3 Power Package Transistors Scan PDF 51.77KB 1
    BDY73
    Unknown Semiconductor Master Cross Reference Guide Scan PDF 118.2KB 1
    BDY73
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 94.92KB 1
    BDY73
    Unknown Shortform Transistor Datasheet Guide Short Form PDF 86.67KB 1
    BDY73
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 156.84KB 1
    BDY73
    Unknown Transistor Replacements Scan PDF 80.54KB 1
    BDY73
    Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF 65.36KB 1
    BDY73
    SGS-Thomson Transistor Datasheet Scan PDF 84.9KB 3
    BDY73
    Thomson-CSF Power Transistor Data Book 1975 Scan PDF 181.02KB 8
    BDY73
    Thomson-CSF Condensed Data Book 1977 Scan PDF 39.75KB 1
    SF Impression Pixel

    BDY73 Price and Stock

    Continental Device India Ltd

    Continental Device India Ltd TBDY73

    Transistor: NPN; bipolar; 60V; 15A; 117W; TO3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME TBDY73 93 1
    • 1 $0.72
    • 10 $0.65
    • 100 $0.58
    • 1000 $0.58
    • 10000 $0.58
    Buy Now

    BDY73 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BDY73

    Contextual Info: BDY73 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    bdy73o204aa31-jul-02 PDF

    BDY73

    Contextual Info: J.E11EU LS 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Power Transistor BDY73 DESCRIPTION • Excellent Safe Operating Area • DC Current Gain-hFE=50-150@lc = 4A • Collector-Emitter Saturation Voltage: VCE(sa.)= 11 V(Max)@ lc = 4A


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    e11eubdy73100ma PDF

    BDY73

    Contextual Info: BDY73 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original
    bdy73o204aa16-jul-02 PDF

    BDY77

    Abstract: BFR99 BDY79 BDY58B BDY61 BDY71 BFQ36 BDY45 BDY54 BDY55
    Contextual Info: 4ÖE ì> m 0133167 DGGG450 4 T Ì SEMELAB ISMLB SEMELAB LTD T.Ay.a , BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY HI-REL Type Num ber BDY45 BDY46 BI1Y47 BDY54 BDY55 BDY56 BDY57 BDY58 BDY58A BDY58B BDY58C BDY60 BÜY61 BDY62 BDY71 BDY72 BDY73 BDY74


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    bdy4520minddy46bdy54+11bdy55bdy56bdy57bdy58bdy77bfr99bdy79bdy58bbdy61bdy71bfq36 PDF

    Contextual Info: BDY73 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original
    bdy73o204aa18-jun-02 PDF

    BDY20

    Abstract: BU208A BU608 2SD870 2S01168 2S0200 BDY38 BU208 2SC1942 2SD1168
    Contextual Info: TO-3 Power Package Transistors NPN Max mum F atings Type No. V CBO V CEC V E0C (V) Min (V) Min (V) Min 2SC1942 1500 2SD 1168 1500 2SD 1168P 1500 800 Electrical Characteristics (Ta=25‘C, Unless Otherwise Specified) PD <W) t (A) @Tc=25° 'c a o (MA) V CB


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    k2645

    Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
    Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt


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    mk135mk136mk137mk138+16mk139mk140mk142mk145mk155157krk2645k4005u664bmosfet k4005mb8719transistor mosfet k4004sn16880nstk5392str451bc417 PDF

    axial zener diodes marking code c3v6

    Abstract: H 48 zener diode ZENER DIODES CODE ID CHART diode zener ph c5v6 74151N HS7030 sescosem SESCOSEM semiconductor diode zener BZX 61 C 10 BZX 460 zener diode
    Contextual Info: SESCOSEM Introduction Sescosem, Societe Europeenne de Semiconducteurs et de Microelectronique, is a branch of the Thomson-CSF Group, one of the world’s largest High Technology combines which includes Ducati Microfaro, LCC-CICE, COFELEC and many other companies.


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    br805abr81abr82abr84a+16br86abr88abr91abr92abr94abr96aaxial zener diodes marking code c3v6h 48 zener diodezener diodes code id chartdiode zener ph c5v674151nhs7030sescosemsescosem semiconductordiode zener bzx 61 c 10bzx 460 zener diode PDF

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


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    trans-611dt15212n2270bc107-182ks+16esc182kasesc182kbsesc1q8-183kseic183kbs8c183kcsbc109-184ksal102 ates2n2222a mpskr206ad149tis58tis88sft3532n24312n4265bfy29 PDF

    BU2080

    Contextual Info: TO-3 Power Package Transistors NPN Electrical Characteristics (Ta=25'C, Unless Otherwise Specified) Maximum Ratings Type No. V CBO V C E0 (V) Min (V) Min 1500 800 2SD1168P Pd 'c VebO (W) (A) (V) Min 0Tc=25°c 5 50 !cbo (PA) Max V CB @ (V) hpE 1000 1500 9


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    2sd1168p2sd1168q2sd2002sd83+5bu326bu326abu608cdn055bu2080 PDF

    BDY38

    Abstract: 2N3055HV BDY20 BU326A 2N3055 bu326 2N3773 2N4347 2N6253 2N6257
    Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-3 Metal Can Package 3 All dimensions are in mm. PIN CONFIGURATION 1. BASE 2. EMITTER 3. COLLECTOR 2 1 TO-3 Power Package Transistors NPN Maximum Ratings Type No.


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    2n3055bdx18cdp055mj2955+9bdy382n3055hvbdy20bu326abu3262n37732n43472n62532n6257 PDF

    BDY38

    Abstract: BDY55 2N305S 2N3773 CDIL BDY20 2N3055 2N3773 2N4347 2N6257 2N6371
    Contextual Info: TO-3 DIM A B C D E F G H J K L M t. r'i 0 —4 1 - MIN MAX 39,37 22,22 8,50 1.09 1.77 30,4 11,18 5,72 17,15 12,25 26,67 4,19 - 6,35 0,96 29.90 10,69 5,20 16,64 11,15 - 3,84 PIN CONFIGURATION 1. BASE 2. EMITTER 3. COLLECTOR ALL DIMENSIONS ARE IN M.M. TO-3 Power Package Transistors NPN


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    2n30554168pcsd1168q000131e+12bdx18cdp055mj2955bdy38bdy552n305s2n3773 cdilbdy202n37732n43472n62572n6371 PDF

    BU208D

    Abstract: BU208 BU208A 2SD870 BDY38 BOY20 BU2080 2SC1942 2SD1168 2SD1168P
    Contextual Info: TO-3 Power Package Transistors NPN Maximum Ratings Type No. V CBO VCEO V EBO (V) (V) (V) Min Min Min Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) •c Po (W) (A) To=25°c ICBO V CB •c e s V CE (MA) Max 0 (V) (MA) Max (V) 10 e


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    2sc19422sd11682sd1168p2sd1168q+122sd2002sd8692sd870bu204bu205bu207bu208dbu208bu208abdy38boy20bu2080 PDF

    WK16412

    Abstract: wk16414 KT201 IRS 8342 WK16413 LQ470 LQ410 1PP75 KC639 KT728
    Contextual Info: TESLA ELEKTRONICKE SOUCASTKiT KO N CERN R O ZN O V nO/iynpOBOÆHMKOBbie npn6opbi A H o n o ro B b ie M H T e rp a n b H b ie MMKpOCXeMbl 1 U n c fjp o B b ie M H T e rp a / ib M b ie M U K p O C X e M bl 2 rn ö p k i/ iH b ie M H T e rp a / ib H b ie MMKpOCXeMbl


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    wk16412wk16414kt201irs 8342+6wk16413lq470lq4101pp75kc639kt728 PDF

    BDY38

    Abstract: 2n3055 2N3055HV BDY73 2N305
    Contextual Info: DIM A B C D E F G H J K L M MIN MAX 39.37 22,22 8,50 1.09 1.77 30,4 11,18 5,72 17,15 12,25 26,67 4,19 - 6.35 0,96 29,90 10,69 5,20 16,64 11,15 - 3.84 U 2 1 PIN CONFIGURATION 1. BASE 2. EMITTER 3. COLLECTOR ALL DIMENSIONS ARE IN M.M. TO-3 Power Package Transistors NPN


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    2n37732n43472n62532n6257+92n63712n6371hvbdy20bdy38bdy55bdy732n30552n3055hv2n305 PDF

    BDY38

    Abstract: 2SD1168P BU606 2SD870 2S0200 2SC1942 2SD1168 2SD1168Q 2SD200 2SD869
    Contextual Info: TO-3 Power Package Transistors NPN Maximum Ratings Type No. VCBO VCE0 VE0O (V) (V) (V) Min Min Min 2SC1942 1500 2SD 1168 1500 2SD 1168P 1500 Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) P0 (W) (A) @Tc=25°c fcao (MA) Max VCB (V) 'CES


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    2sc19422sd11682sd1168p2sd1168q+92sd2002sd8692sd870bu204bu205bu207bdy38bu6062s0200 PDF

    1n52408

    Abstract: 1N52428 zener SFC2311 78M12HM 21L02A 54175 IRS 9530 transistor 10116dc BB105G 962PC
    Contextual Info: Contents Fairchild Semiconductors Ltd. Solid State Scientific Inc. Diodes Ltd. Thomson C. S. F. B Ashcroft Electronics Ltd. Sprague Electric UK Ltd. Precision Dynamic Corp. B&R Relays Schrack Relays Heller mann Electric B Foreword We are pleased to present the latest edition of the BARLEC Catalogue, which


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    301pt1115302pt1115303pt1115311pt1110+15312pti110319pti110327pti110351pt1115353pt11151n524081n52428 zenersfc231178m12hm21l02a54175irs 9530 transistor10116dcbb105g962pc PDF

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


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    2sb504kpl 30092sb502bly34+6germaniumbf316absx122sd716, 2sb686 35w amplifiersbf197acy52 PDF

    2N3055HV

    Abstract: BDY38 BDX18 2N3055 2N3773 2N4347 2N6253 2N6257 2N6371 2N6371HV
    Contextual Info: TO-3 : DIM A B C D E F G H J K L M r 'i 7 r 0 — 41— MIN ; MAX 39,37 22,22 8,50 1.09 1,77 30,4 11,18 5,72 17,15 12,25 26,67 4,19 - 6,35 0,96 29,90 10,69 5,20 16,64 11,15 - 3,84 PIN CONFIGURATION 1. BASE 2. EMITTER 3. COLLECTOR ALL DIMENSIONS ARE IN M.M.


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    2n30552n3500csd1168q000131e+11bdx18cdp055mj29552n3055hvbdy382n37732n43472n62532n62572n63712n6371hv PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711 PDF

    TRANSISTOR BC337 SMD

    Abstract: transistor BC170 C5198 CDIL 2N2222A Transistor bd139 smd bc337 SMD PACKAGE bd140 SMD equivalent BC109 BC184 BC549 a1941 CDIL BD139
    Contextual Info: • Transistors • • • • • Small Signal Medium Power Power Darlington MOSFET CDIL Semiconductors ~ Worldwide Reach Product Profile Transistors Product Range • • Chips/Dice – Diffused Silicon Wafers Surface Mount and Leaded Semiconductor Devices


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    mpsa45p2n2369pn2222mpsa05+16mpsa55p2n2369apn2222amps2907ampsa06mpsa56transistor bc337 smdtransistor bc170c5198cdil 2n2222a transistorbd139 smdbc337 smd packagebd140 smd equivalentbc109 bc184 bc549a1941cdil bd139 PDF

    SM2174

    Abstract: SM2184 2N3055H MOTOROLA 2SD878 mj2955 TO-218 BDY73 BD130 BDY20 2SD151 2SA1042
    Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO on PD Max hFE *T ON) Min (Hz) >CBO t0N r Max Max (A) (8) Max (Ohms) (CE)sat Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . . .15


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    bdt56bdt58bd907bd908+12mje1291mje1661sm2174sm21842n3055h motorola2sd878mj2955 to-218bdy73bd130bdy202sd1512sa1042 PDF

    bdx20

    Contextual Info: TO-3 POWER PACKAGE TRANSISTORS NPN M a x im u m R a t in g s Type No. v CB0 (V) Min v CB0 v EB0 (V) (V) Min Min PD (W) 8Tc=25"C Electrical C h a ra c te ris tic s 'CBO (HA) * VCB hFE (V) Max lc & (A) Min VCE 00 Max #1100 800 5 10 2 2.00 5 BU209 #1500


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    bu206bu209bu205bu208+5bdx20bdx18j295scdp055q000n3 PDF

    KF520

    Abstract: KT725 diac kr 206 KT707 KD502 kt201 KT206-200 KU607 KYS 30 40 diode KT784
    Contextual Info: TESLA ECIMEX, a. s. T E /1 \L /I Sem iconductor Discrete Devices Sem iconductor Discrete Devices CONTENTS . 3 TRANSISTORS. 5


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    15blatnkf520kt725diac kr 206+7kt707kd502kt201kt206-200ku607kys 30 40 diodekt784 PDF