000131E Search Results

BDY38

Abstract: BDY55 2N305S 2N3773 CDIL BDY20 2N3055 2N3773 2N4347 2N6257 2N6371
Contextual Info: TO-3 DIM A B C D E F G H J K L M t. r'i 0 —4 1 - MIN MAX 39,37 22,22 8,50 1.09 1.77 30,4 11,18 5,72 17,15 12,25 26,67 4,19 - 6,35 0,96 29.90 10,69 5,20 16,64 11,15 - 3,84 PIN CONFIGURATION 1. BASE 2. EMITTER 3. COLLECTOR ALL DIMENSIONS ARE IN M.M. TO-3 Power Package Transistors NPN

Contextual Info: OM6Û17SA OM6019SA OM6Q18SA OM6020SA POWER MOSFET IN HERMETIC ISOLATED TO-254AA PACKAGE 100V Thru 500V, Up To 25 Amp, N-Channel MOSFET In Hermetic Metal Package FEATURES • • • • • • Isolated Hermetic Metal Package Fast Switching Low RDS 0n Available Screened To MIL-S-19500, TX, TXV And S Levels

Contextual Info: HIGH VOLTAGE FAST RECOVERY SILICON DIODE FOR CRT APPLICATIONS TYPE— TVR 30 This high voltage fast recovery diode was developed for assembly or encapsulation and is intended primarily for use as a building block in the assembly of high voltage circuits for

Contextual Info: CIUALITY SEMICONDUCTOR INC bSE i> m QSFCT841/3/5T, Q 74bbflQ3 QQD1310 536 2841/3/5T Q S 54/74FC T841T Q S54/74F C T843T Q S 54/74FC T845T High Speed CMOS Bus Interface 8, 9 & 10-bit Latches Q S 54/74FC T2841T Q S54/74F C T2843T Q S 54/74FC T2845T FEATURES/BENEFITS