2SD83 Search Results

2SD834

Contextual Info: SavantIC Semiconductor Product Specification 2SD834 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·High DC current gain ·DARLINGTON ·Low collector saturation voltage ·Excellent safe operating area APPLICATIONS ·Electronic ignitor ·Relay and solenoid drivers

Contextual Info: 2SD833 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON GENERL PURPOSE POWER AMPLIFIER Outline Drawings TO-220AB Features High D.C. current gain Low saturation voltage High reliability 1 : Base Applications 2 : Collector 3 : Emitter

2SC4510R

Abstract: ET127 ET-190 et190 ringing choke converter
Contextual Info: • /\°7 — x / W X / Power Devices # 1 Ir^ lt / \°7 — £ — U > K > h "7 > v JX. £ m s£ Devic«type 2SD833 2SD916 ET378 2SD834 2SD1073 2SD835 2SD1072 2SD1071 ET375 ET190 ET191 VcBO V £0 Power darlington transistors Ic -,$£5 Cont. Amps. Watts <Mm.

ET-191

Contextual Info: TRANSISTORS IC AM PS Max. 3 5 IC AM PS Max. VceoV Pc su s W 800 Pc W 80 Device Type NPN 2SC3550 400 60 180 80 2SD921 800 40 Device Type NPN 2SC2929 2SC3549 800 80 2SC3551 50 25 2SD1157 1000* 80 ET383 200 25 2SD834 250 60 2SD1073 100 80 ET393 -80 30 2SB862*

IMO 731 relay

Abstract: 2SD834 T151
Contextual Info: 2SD834 N P N = m i i ï M T R IPLE D IFFU S E D P LA N E R T Y PE HIGH P O W E R D A R LIN G T O N 7 i ' - i - ï ï i S W IT C H IN G X - iv f- 's ÿ fB Features • High D. C. current gain • Low saturation voltage • A S O ^ J av.' • f t lS f H i Excellent safe operating area

Contextual Info: , Una. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2SD835 TRIPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON /i ! Outline Drawings HIGH VOLTAGE, SWITCHING Features ' High D. C. current gain

Vebo 15V

Contextual Info: 2SD835 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON HIGH VOLTAGE, SWITCHING Outline Drawings TO-220AB Features High D.C. current gain Low saturation voltage Excellent safe operating area High reliability 1 : Base 2 : Collector 3 : Emitter

2SD837

Abstract: 2SB751 2SD849 TCA 700 y 2SB751A 2SD837A TO-3 2SB panasonic fc 130
Contextual Info: PANASONIC INDL/ELEKiSEMI} 75C D | 1^35654 D C C m t H 0 |~~D ’"*T- 3 3 ' ^ 2SD837, 2SD837A 2SD837, 2 S D 8 3 7 A '> i; a > N P N U > h > / S i N P N T rip le Diffused P la n a r D arlington f f i J lJ i & ll f t i i't S f f l / A F Pow er Amplifier 2SB751, 2SB751A £ z i 'y z f >J *

Contextual Info: 2SD835 X ± ' < T7 - Y s7 > ì > * 9 TRIPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON N P N = £ fö W [ y u - i- B / \ < f * < r j- ÿ - lM 'y HIGH VOLTAGE, SWITCHING ‘ Outline Drawings : Features • h p E ^ S t' H igh D. C, cu rre n t gain • Low saturation voltage

Contextual Info: 2SD834 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON SWITCHING Outline Drawings TO-220AB Features High D.C. current gain Low saturation voltage Excellent safe operating area High reliability 1 : Base 2 : Collector 3 : Emitter Applications

2SD834

Abstract: NPN POWER DARLINGTON TRANSISTORS
Contextual Info: Inchange Semiconductor Product Specification 2SD834 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・High DC current gain ・DARLINGTON ・Low collector saturation voltage ・Excellent safe operating area APPLICATIONS ・Electronic ignitor

2sd836

Abstract: 2SD836A 2SB750 2SB750A 2SD83
Contextual Info: 2SD836, 2SD836A 1 s> 2SD836, 2SD836A IJ zi v N PN 'J > h > Si NPN Triple Diffused Planar Darlington Unit ! mm Power Amplifier 2SB750, 2SB750A • # 10.5 ± 0.5 t - i V 7" V > > 2 U /C o m p lem en tary Pair with 2SB750, 2SB750A 4.8max. , 9.8m ax. 1.5max. 7 rT 7.6m in.

ignitor sp 20

Abstract: 2SD835 ignitor circuit c9ab 9v ignitor NJ 15 U1 W
Contextual Info: 2SD835 N P N E L m f o m y is — Ê ± / < 7 - l TRIPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON t-w * HIGH VOLTAGE, SWITCHING « w ± , 7 .4 : Features • h p E ^ S t' High D . C , curren t gain • Lo w saturation voltage • ASOA^J a I ' • SfHB*ISfc

2SD834

Contextual Info: , Line. c/.£ii£u 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2SD834 Outline Drawings TRIPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON TO-220AB SWITCHING • Features • High D.C. current gain

Contextual Info: 2SD833 t ± ' < r7 - V 9 > i> X jr TRIPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON GENERL PURPOSE POWER AMPLIFIER IW ß ’t ä : Outline Drawings ; Features • h p E ^ i f tv .' H i g h D . C . c u r r e n t g a i n • tf c f n V £ E d * f f i:i' L o w s a t u r a t i o n v o l t a g e

2SB750

Abstract: 2SD836 2SD836A 2SB750A uips
Contextual Info: 2SB750, 2SB750A 2SB750, 2SB750A v i; u > P N P x t =¥"> r J i s y i ' - j - B ? - V > k > Si PNP Epitaxial Planar Darlington U nit I mm 10.5 + 0.5 Bffl, X - i -y-31 > / P o w e r Amplifier, Switching 2SD836, 2SD836A ¿: n > 7° U > > ^ U / Complementary Pair

IGNITOR Z 400 M k

Abstract: CDM 03 2SD835 T151 T460 T810 T930
Contextual Info: 2SD835 N P N = £ f ö W X ' < T7 - Y s7 > ì > * 9 TRIPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON [ y u - i - B / \ < f * < r j- ÿ - lM ± 'y HIGH VOLTAGE, SWITCHING ‘ Outline Drawings : Features • h p E ^ S t' H igh D. C, cu rre n t gain • Low saturation voltage

2SD832

Abstract: fujitsu transistor j75c
Contextual Info: 37 nJjTfSU MICROELECTRONICS ] E^|37l4,i7bE OOOlñbt. b FUJITSU 2SD832 M IC R O E L E C T R O N IC S T - > 3 7 4 9 7 1>2 F U J I T S U M I C R O E L E C T R O N I C S 37C SILICON NPN DARLINGTON TRANSISTOR ABSOLUTE MAXIMUM RATINGS Rating X) TA = 25 "C) Condition

2SD834

Contextual Info: 2SD834 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON SWITCHING Outline Drawings TO-220AB Features High D.C. current gain Low saturation voltage Excellent safe operating area High reliability 1 : Base 2 : Collector 3 : Emitter Applications

2SD835

Abstract: 2sd83 vebo darlington icbo 0.1ma
Contextual Info: 2SD835 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON HIGH VOLTAGE, SWITCHING Outline Drawings TO-220AB Features High D.C. current gain Low saturation voltage Excellent safe operating area High reliability 1 : Base 2 : Collector 3 : Emitter

2SD833

Contextual Info: 2SD833 X ± ' < TJ - Y ? > ì > 7 > 9 TR IP LE D IFF U S E D PLANER TY P E H IG H POW ER D A R LIN G TO N N P N = m t ì M 7 l ' - 1- M J-yY 'S GENERL PURPOSE POWER AMPLIFIER Features • h p E ^ iftv .' H ig h D . C . c u r r e n t g a in • L o w s a t u r a t io n v o lta g e

2SD837

Abstract: 2SB751 2SD837A 2SB751A
Contextual Info: ¡V D - ^ y v ^ s 2SD837, 2SD837A 2SD837, 2SD837A V Ij ZI > N P N is — t - t e ? - ' J > b > S i N P N T r ip le D iffu s e d P la n a r D a r lin g to n U n it I mm P o w e r A m p l if i e r 10.5 + 0.5 2SB 751, 2SB 751A □ t > >~7* 'J / C o m p l e m e n t a r y

2SD838

Contextual Info: 2SD838 Triple Diffused Type Silicon Transistor For V ery High Voltage Sw itching Use ÎHr^ItGETK^iij * Designed for a horizontal output stage of line operated solid state T V with big size CRT. ★A lso for general high voltage use as regu­ lator or switching use.

2SD921

Abstract: 2SC2625 2sc2625 equivalent et190 transistor ET401 2sc3030 2SC2625 transistor 2sc3318 ET206 2sc4242
Contextual Info: BIPOLAR TRANSISTORS Nov-01 Quick Selection Guide Comprehensive chart -40 to 400 voltage Collector current Ic cont. * PNP transistor VCEO sus Voltage min. Collector-to-emitter voltage -80 40 (A) -5 3 4 50 60 80 100 180 200 250 300 2SD834 2SD1128 2SD921 2SC2767