IRF 534
Abstract: IRFE320 JANTX2N6792U JANTXV2N6792U LCC-18
Contextual Info: PD - 93985A REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS SURFACE MOUNT LCC-18 IRFE320 JANTX2N6792U JANTXV2N6792U REF:MIL-PRF-19500/555 400V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) IRFE320 400V 1.8Ω ID 1.8A LCC-18 The leadless chip carrier (LCC) package represents the
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IRFE320
Abstract: JANTX2N6792U JANTXV2N6792U LCC-18 JANTX2N6
Contextual Info: PD - 93985 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS SURFACE MOUNT LCC-18 Product Summary Part Number IRFE320 BVDSS 400V RDS(on) 1.8Ω IRFE320 JANTX2N6792U JANTXV2N6792U [REF:MIL-PRF-19500/555] 400V, N-CHANNEL ID 1.8A The leadless chip carrier (LCC) package represents the
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Contextual Info: PD - 93985A REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS SURFACE MOUNT LCC-18 IRFE320 JANTX2N6792U JANTXV2N6792U REF:MIL-PRF-19500/555 400V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) IRFE320 400V 1.8Ω ID 1.8A LCC-18 The leadless chip carrier (LCC) package represents the
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IRF460
Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Contextual Info: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,
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30am-544-0-1737-2comdb8029cirf460+9smd transistor marking k38smd transistor k38we 751002 ssmd-6ctransistor smd k45rad-hard igbtirf3504afl2805s manufactured by international rectifier550-065
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IRFM9034
Abstract: irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261
Contextual Info: International Rectifier Government and Space Products BVDSS Part Number Channel V RDS(on) (Ω) PD @ TC = 25°C ID @ T =100°C C (A) ID @ T =25 C (A) Total Dose Rating Rads (Si) (W) Fax-on-Demand HEXFET Power MOSFETs to view a data sheet, click on the part number
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irhe7110irhe7130irhe7230irhe8110+13irhe8130irhe8230irhe9130irhe9230irhg7110irhg6110irfm9034irh7c50seirfm460irhyirfe310international rectifier pjansr2n7261
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2N7334
Abstract: irfg9110 H24 SMD
Contextual Info: Other Products from IR Government and Space H EX FET Power M O SFETs Radiation Hardened N - and P-Channel Part • d@ T ,= 25°C Iq@ Tq = 100*C A (A) RthJC Max. (K/W) Pd@ Tq = 25°C Number BVq ss (V) RDS(on) (Ohms) IRHE7110 100 IRHE8110 IRHE7130 IRHE8130
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2N6794
Abstract: mosfet 2n6788 MOSFET cross-reference 2N6788 2N6790 2N6792 mmc 4011 E transistor equivalent 2n6788
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 11 May 2010. INCH-POUND MIL-PRF-19500/555K 11 February 2010 SUPERSEDING MIL-PRF-19500/555J 8 June 2007 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON,
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mil-prf-19500/555kmil-prf-19500/555j2n67882n6788u+102n67902n6790u2n67922n6792u2n67942n6794umosfet 2n6788mosfet cross-referencemmc 4011 etransistor equivalent 2n6788
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10RIA10
Abstract: HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF
Contextual Info: Index International Rectifier Government and Space Products Level of Quality Part Number Rectifiers Voltage Current CECC Issue Issue Assessment and CECC V (A) Specs Number Date 50 000 Screen Level Options Fax-on-Demand CECC-Qualifed, Europe Mfg. in Italy
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do-203aahfa40hf120hfa40hf60o-254aa+15hfa35hb120hfa35hb120chfa35hb60hfa35hb60co-258aahfa45hc120c10ria10irfm903410ria10010ria12010ria2010ria4010ria60jansr2n726170hf
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MO-D36AB
Abstract: IRF9510 SEC IRF510 SEC 2n6845 jantx D 10.7 A IRF540 smd irf740 STAND FOR irfm9230 2N7237 JANTXV BC 542
Contextual Info: Government/ Space Products Products From ir Life, Power-Age, Environmental and Military Testing Capabilities — USA MIL-S-19500 Qualified Life Tests and Power-Age Capabilities A. H ig h te m p e ra tu re sto ra g e life te stin g up to 2 0 0 ° C . 0 . H T R B te st c a p a b ilitie s o v e r 2 5,00 0 p o s itio n s for V G S a n d for
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n10 smd
Contextual Info: International Government and Space HEXFET Power MOSFETs [ ÏQ R R e c t ï f ie r Hermetic Package N & P Channel Part b v d ss RDS on Number (V) (Ohms) lp @ Tc = 100"C RthJC Max. Pd @ TC = 25°C Outline «1 (A) (K/W) (W) Number (1) IRFE024 60 0.15 6.7 4.2
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IRF540
Abstract: T0-220
Contextual Info: SEMELAB pic SELECTOR GUIDE MOS PRODUCTS June 1998 T ype N o Technology Polarity Package VDSS RDSS on 10 Pd IRF452 IRF453 IRF460 IRF520 IRF521 IRF522 IRF523 IRF530 IRF531 IRF532 IRF533 IRF540 IRF541 IRF542 IRF543 IRF620 IRF621 IRF622 IRF623 IRF720 IRF721 IRF722
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ciss 200v
Abstract: IRFE310
Contextual Info: Search Results Part number search for devices beginning "IRF9140" Datasheets are downloaded as Acrobat PDF files. Semelab Home Fet Products ID cont (A) PD (W) RDSS (Ω) CISS (pF) QG (nC) PRODUCT Polarity Package VDSS (V) IRF9140 P-Channel TO3 100V 18A 125W
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Contextual Info: _ I n t e r n a t i o n a l R e c t if ie r Government and Space Products Part Number P bvdss Vohj) RDS(on) (Ohmi) 10« To*25* ID« Tc*100° (Amp*) (Amps) Total Dos* Rating Radi (Si) PD« To2P (Watts) Fax-onDrniand Number
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Diode 400V 5A
Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Contextual Info: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM
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Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 8 March 2004. INCH-POUND MIL-PRF-19500/555H 8 December 2003 SUPERSEDING MIL-PRF-19500/555G 8 December 1997 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON,
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Contextual Info: TOR IRFE Series Devices IRFE Series Data Sheet The IRFE Data Sheet describes 19 devices, 12 N-Channel and 7 P-Channel, all contained in the LCC package. This data sheet is arranged to show common tabular and graphical information between devices. alphabetical order. W here the information is device
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smd 662
Abstract: 2N7422 2n7425 2N7426 2N7383 601 SMD 2N7389 IRHM9260 2N7422U 2N7219U
Contextual Info: QPL Product Matrix February, 1999 Government & Space Products Package TO39 LCC MO036 MO036 MO036 TO39 LCC TO39 LCC TO3 TO39 LCC TO3 TO39 LCC TO39 LCC TO257 TO257 TO39 LCC TO254 SMD-1 TO254 SMD-1 TO3 TO254 SMD-1 TO254 SMD-1 TO254 TO-254 SMD-1 TO-254 SMD-2 TO-254
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Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 1 June 2013. INCH-POUND MIL-PRF-19500/555L 17 April 2013 SUPERSEDING MIL-PRF-19500/555K 11 February 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON,
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Contextual Info: IOR IRFE Series Devices IRFE Series Data Sheet alph abetical order. W h e re the inform ation is device specific, w e have assigned a num eric c h a ra c te r for th e graph typ e and an a lp h a c h a ra c te r to a given d ev ic e . S e e T a b le A b elo w . W h e re graphs are
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RG 2006
Abstract: 2N6788 2N6792 2N6790 2N6794
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 08 March 1998. INCH POUND MIL-PRF-19500/555G 08 December 1997 SUPERSEDING MIL-S-19500/555F 31 March 1995 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON
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