JANSH2N7269 Search Results

2N7269U

Abstract: IRHN7250 IRHN8250 JANSH2N7269U JANSR2N7269U
Contextual Info: PD - 90679E IRHN7250 IRHN8250 JANSR2N7269U JANSH2N7269U REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR 200Volt, 0.100Ω Ω, MEGA RAD Hard REF:MIL-PRF-19500/603 N CHANNEL MEGA RAD HardTM TM HEXFET® Inter national Rectifier’s RAD Hard technology

IRF460

Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Contextual Info: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,

Contextual Info: PD - 90674D IRHM7250 JANSR2N7269 200V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA REF: MIL-PRF-19500/603 RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHM7250 100K Rads (Si) IRHM3250 300K Rads (Si) RDS(on)

IRFM9034

Abstract: irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261
Contextual Info: International Rectifier Government and Space Products BVDSS Part Number Channel V RDS(on) (Ω) PD @ TC = 25°C ID @ T =100°C C (A) ID @ T =25 C (A) Total Dose Rating Rads (Si) (W) Fax-on-Demand HEXFET Power MOSFETs to view a data sheet, click on the part number

2N7334

Abstract: irfg9110 H24 SMD
Contextual Info: Other Products from IR Government and Space H EX FET Power M O SFETs Radiation Hardened N - and P-Channel Part • d@ T ,= 25°C Iq@ Tq = 100*C A (A) RthJC Max. (K/W) Pd@ Tq = 25°C Number BVq ss (V) RDS(on) (Ohms) IRHE7110 100 IRHE8110 IRHE7130 IRHE8130

IRHM3250

Abstract: IRHM4250 IRHM7250 IRHM8250 JANSR2N7269
Contextual Info: PD - 90674D IRHM7250 JANSR2N7269 200V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA REF: MIL-PRF-19500/603 RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHM7250 100K Rads (Si) IRHM3250 300K Rads (Si) RDS(on)

10RIA10

Abstract: HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF
Contextual Info: Index International Rectifier Government and Space Products Level of Quality Part Number Rectifiers Voltage Current CECC Issue Issue Assessment and CECC V (A) Specs Number Date 50 000 Screen Level Options Fax-on-Demand CECC-Qualifed, Europe Mfg. in Italy

IRHN8250

Abstract: JANSR2N7269U IRHN3250 IRHN4250 IRHN7250
Contextual Info: PD - 90679F IRHN7250 JANSR2N7269U 200V, N-CHANNEL REF:MIL-PRF-19500/603 RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-1 RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number IRHN7250 IRHN3250 IRHN4250 IRHN8250 Radiation Level 100K Rads (Si) 300K Rads (Si)

IRHM7250

Abstract: IRHM3250 IRHM4250 IRHM8250 JANSF2N7269 JANSR2N7269
Contextual Info: PD - 90674C IRHM7250 JANSR2N7269 200V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA REF: MIL-PRF-19500/603 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHM7250 100K Rads (Si) IRHM3250 300K Rads (Si) RDS(on)

Contextual Info: _ I n t e r n a t i o n a l R e c t if ie r Government and Space Products Part Number P bvdss Vohj) RDS(on) (Ohmi) 10« To*25* ID« Tc*100° (Amp*) (Amps) Total Dos* Rating Radi (Si) PD« To2P (Watts) Fax-onDrniand Number

2N6764 JANTX

Abstract: 91447 IR2113L
Contextual Info: Government / Space Products Catalog of Available Documents Revised 5/11/99 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100  Radiation-Hardened HEXFET Description Datasheets IRH7054 IRH7130 IRH7150 IRH7230 IRH7250 IRH7250SE IRHF7330SE IRHF7430SE IRH7450

IRHN3250

Abstract: IRHN4250 IRHN7250 IRHN8250 JANSR2N7269U
Contextual Info: PD - 90679G IRHN7250 JANSR2N7269U 200V, N-CHANNEL REF:MIL-PRF-19500/603 RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-1 RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number IRHN7250 IRHN3250 IRHN4250 IRHN8250 Radiation Level 100K Rads (Si) 300K Rads (Si)

Contextual Info: PD - 90679G IRHN7250 JANSR2N7269U 200V, N-CHANNEL REF:MIL-PRF-19500/603 RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-1 RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number IRHN7250 IRHN3250 IRHN4250 IRHN8250 Radiation Level 100K Rads (Si) 300K Rads (Si)

2N6782 JANTX

Abstract: 2N6758 JANTX 2N6756 JANTX 2N6766 JANTX 2N6792 JANTX 2N6796U 60022 2N7236 2n6806 jantx 2N6770 JANTX
Contextual Info: Government / Space Products Catalog of Available Documents Revised 8/27/98 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100  Radiation-Hardened HEXFET Document # Pages Date IRH7054 90883 5 Oct-96 IRH7150 90677 13 Oct-96 IRH7250 90697 13 Oct-96 IRH7450SE

SHOCK+SENSOR+083

Contextual Info: International Government and Space llËSRectifier HEXFET Power MOSFETs Radiation Hardened N & P Channel 3 Part Number * bvDSS (V) R DS(on) (Ohms) >D@ TC = 100°C R thJC Max. P|J@ Tc = 25°C Outline (A) (A) (K/W) (W) Number (1) IRH7054 60 0.025 45 32 0.83