IR IRF640 Search Results

IRF640FI

Abstract: GC525
Contextual Info: ¿57 S G S -T H O M S O N ¡m e ra « IR F 6 4 0 IR F 6 4 0 FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYP E V IRF640 IRF640FI dss 200 V 200 V R DS on < 0.18 < 0.18 a a Id 18 A 10 A . TYPICAL RDs(on) = 0.145 Q . . AVALANCHE RUGGED TECHNOLOGY

Contextual Info: IRF640 IRF640FP N - CHANNEL 200V - 0.150« - 18A TO-220/TO-220FP MESH OVERLAY MOSFET TYPE V IR F 6 4 0 IR F 6 4 0 F P dss 200 V 200 V R D S o n Id < 0.1 8 Q. < 0.1 8 Q. 18 A 18 A . TYPICAL Ros(on) =0.1 50 £1 . EXTREMELY H IG H dV /dt CAPABILITY . VERY LOW INTRINSIC CAPACITANCES

f640

Abstract: IR 643 643R
Contextual Info: 33 HARRIS IR F640/641/642/643 IR F640R/641R/642R /643R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package T O -2 2 0 A B TOP VIEW • 16A and 18A, 150V - 200V • rDS on = 0 .1 8 fi and 0 .2 2 0 • Single Pulse Avalanche Energy Rated*

Contextual Info: • 4302271 QDS4033 T04 ■ 2 H A R R IS HAS IR F640/641/642/643 IR F640R /641R /642R /643R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package T0-22QAB TOP VIEW • 16A and 18A, 150V - 200V • rDS(on = 0 .1 8 0 and 0 .2 2 0 • Single Pulse Avalanche Energy Rated*

irf640

Abstract: IRF640FI
Contextual Info: = 7 kT # S G S -T H O M S O N IRaO CœillLI(B,flB(S MD(Ëi IRF640 IRF640FI N - C HANNEL EN H A N C EM EN T MODE PO W ER MOS TR A N SISTO R S . . . . 00 00 ö Ö R DS(on) A 200 V 200 V O O V dss IR F 640 IR F 640 F I A TYPE Id 18 A 10 A TY P IC A L R DS(on) = 0.145 Q

RF640

Contextual Info: International 3X3R Rectifier PD-9S02# IR F 6 4 0 S /L p r e l im in a r y HEXFET Power MOSFET • • • • • • • Surface Mount I RF640S Low-profile through-hole (IRF640L) Available in Tape & Reel (IRF640S) Dynamic dv/dt Rating 150°C Operating Temperature

irf640

Abstract: IRF240 RF640 IRF 1640 IRF640 applications note PULSE GENERATOR IRF640-643 IRF241 IRF242 IRF243 IRF641
Contextual Info: I FAIRCHILD SEMICONDUCTOR fl4 dÈ J 3 4 b U 7 4 DDETflfiS □ IRF240-243/IRF640-643 T - 3 Ï - H N-Channel Power MOSFETs, 18 A, 150-200 V FA IR C H ILD A Schlumberger Company Power And Discrete Division Description TO-2Q4AE TO-220AB These devices are n-channel, enhancement mode, power

IRF460 in TO220

Abstract: IRF09110 IRF448 of IRF9540 and IRF540 irf460 switching irf460 to247 IRF250 TO-247 IRF244 Application of irf250 IRFD9120 N CHANNEL
Contextual Info: HEXFET Power MOSFETs Products From IR FullPak N-Channel FullPak Fully-isolated HEXFETs from the heatsink/enclosure , then the FullPak is for you. Until now, semiconductors were insulated from grounded heatsinks with insulating w ashers and nylon screws. Improper Installation of

Transistor S8550 2TY

Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6
Contextual Info: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250

IRF734

Abstract: irf9640 REPLACEMENT GUIDE IRF3205 smd IRGTI165F06 irg4pc50fd *g4pc50w IRGKI115U06 IRGTI200F06 *gBC20f IRLIZ34
Contextual Info: Electronic Switches Catalog of Available Documents Revised 5/11/99 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100 HEXFET Power MOSFETs Description Gen Package Document # Pages Date 11 10 12 7 May-97 May-97 91615 91650 91651 90454 90592 90565 90566

fqp60n06

Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier

IRFBE30 equivalent

Abstract: irf9640 REPLACEMENT GUIDE IRGKI200F06 IRGP440U replacement IRF3205 smd IRGBC20FD2 IRFK3D450 IRFBg30 equivalent IRGNIN150M06 irc540
Contextual Info: Electronic Switches Catalog of Available Documents Revised 8/27/98 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100  HEXFET Power MOSFETs Description Gen Package Document # Pages Date 11 10 12 7 May-97 May-97 91615 91650 91651 90454 90592 90565 90566

ATK Power Supply Schematic Diagram

Contextual Info: IRF640S N - C H A N N E L 2 0 0 V - 0 .1 50Í2 - 18A TO-263 MESH OVERLAY MOSFET TYPE V IR F 640 S . . . . d ss 200 V R d Id S o ii < 0 .1 8 Q. 18 A TYPICAL R D S (on) = 0.150 £2 EXTREMELY HIGH dv/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED

RF640

Abstract: IRF 640
Contextual Info: *57 S G S -T H O M S O N !LiO T iQ £I TY PE IRF640 IRF640FI • . ■ . i r F 640 IR F 6 4 0 F I N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS V dss RDS(on Id 200 V 200 V < 0.18 £2 < 0 .1 8 a 18 A 10 A TYPICAL RDs(on) = 0.145 Q AVALANCHE RUGGED TECHNOLOGY

ld18a

Contextual Info: IR F640A Advanced Power MOSFET FEATURES B V DSS = 200 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n ■ Lower Input Capacitance lD = 1 8 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 |aA (Max.) @ V DS = 200V

D2Pak Package dimensions

Abstract: AN-994
Contextual Info: IRF640NPbF/SPbF/LPbF D2Pak Package Outline Dimensions are shown in millimeters inches D2Pak Part Marking Information (Lead-Free) T H IS IS AN IR F 5 3 0 S W IT H L O T CO D E 8 0 2 4 AS S E M B L E D O N W W 0 2 , 2 0 0 0 IN T H E AS S E M B L Y L IN E "L "

Cross Reference power MOSFET

Abstract: irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram IFR822 Diode BYW 56 BUZ41 equivalent transistor f630
Contextual Info: FAIRCH ILD Power Products Data Book FA IR C H ILD Power Data Book A S chlum berger C om pany 1 9 86/8 7 Power and Discrete Division 1986 Fairchild Semiconductor Corporation Power and Discrete Division 4300 Redwood Highway, San Rafael, CA 94903 415 479-8000 TWX 910-384-4258

FL110

Abstract: LL110 irf7408 lr014 IRC540 equivalent IRL1Z14G IRFC024 IRFBE30 equivalent IRFCG50 irfbc10lc
Contextual Info: H EXFET Other Products from IR SOT-89 N-Channel V BR q s s Drain-to-Source ROS(on) Part Breakdown On-State Number Voltage Resistance (Volt) (Ohms) IRFS1Z0 100 Power MOSFETs Surface Mount Iq Continuous Drain Current 25°C (Amps) 2.4 0.82 Iq Continuous RthJAMax P d @ T c = 25°C Case

MTM13N50E

Abstract: P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E
Contextual Info: ir tmos Cross-Reference The follow ing table represents a cro ss-re fe re n ce guide for all T M O S P ow er M O SFETs w hich are m an ufacture d directly by M otorola. W here the M otorola part nu m be r differs from the Industry part num ber, the M otorola de vice is a “form , fit and fu n ctio n ”

1rf740

Abstract: 1RF642 1rf730 1RF640 1RFD110 1RF840 IRF643 IRF644 IRF711 IRF712
Contextual Info: - 254 - f M £ tt € ft X £ Vd s or Vd g Vg s fé <Ta=25cC Id Pd * /CH * /CH ÏI Ig s s V g s th) Id s s min 1D nA) (Ta=25‘C ) Id (on) D s(o n ) Vi>s= Vg s max ft g fs Ciss Coss Crss $1- B m % V g s =0 (max) *typ V g s (V) (0) *lyp (A) (nA) IRF642 IR

MO-D36AB

Abstract: IRF9510 SEC IRF510 SEC 2n6845 jantx D 10.7 A IRF540 smd irf740 STAND FOR irfm9230 2N7237 JANTXV BC 542
Contextual Info: Government/ Space Products Products From ir Life, Power-Age, Environmental and Military Testing Capabilities — USA MIL-S-19500 Qualified Life Tests and Power-Age Capabilities A. H ig h te m p e ra tu re sto ra g e life te stin g up to 2 0 0 ° C . 0 . H T R B te st c a p a b ilitie s o v e r 2 5,00 0 p o s itio n s for V G S a n d for

SSH6N80

Abstract: rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50
Contextual Info: Sales type BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 IRF620 IRF630 IRF640 IRF730 IRF740 IRF820 IRF830 IRF840 IRFBC30 IRFBC40 IRFZ40 MTP3055E STB10NA40 STB10NB20 STB10NB50 STB11NB40 STB15N25 STB16NB25 STB18N20 STB19NB20 STB30N10 STB36NE03L

linear applications of power MOSFET IRF640

Abstract: irf640 IRF641 IRF640 circuit IRF642 F640 RF642 transistors irf640 IRF643
Contextual Info: - Standard Power MOSFETs IRF640, IRF641, IRF642, IRF643 File Number 1585 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors

International Rectifier irf640n

Abstract: irf640n N-Channel MOSFET 200v
Contextual Info: PD - 94007 IRF640N HEXFET Power MOSFET l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements D VDSS = 200V RDS on = 0.15Ω G ID = 18A