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    MTD3055 Search Results

    MTD3055 Datasheets (44)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    MTD3055E
    Toshiba Power MOSFETs Cross Reference Guide Original PDF 165.78KB 67
    MTD3055E
    Motorola TMOS power FET. 60 V, 8 A, Rds(on) 0.15 Ohm. Scan PDF 224.74KB 6
    MTD3055E
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 95.09KB 1
    MTD3055E
    Unknown FET Data Book Scan PDF 54.65KB 1
    MTD3055E
    Unknown Shortform Datasheet & Cross References Data Short Form PDF 89.06KB 1
    MTD3055E
    National Semiconductor Power MOSFET Scan PDF 41.02KB 1
    MTD3055E1
    Motorola TMOS power FET. 60 V, 8 A, Rds(on) 0.15 Ohm. Scan PDF 224.74KB 6
    MTD3055E-1
    Unknown FET Data Book Scan PDF 54.65KB 1
    MTD3055E-1
    Unknown Shortform Datasheet & Cross References Data Short Form PDF 89.06KB 1
    MTD3055E1
    National Semiconductor Power MOSFET Scan PDF 41.02KB 1
    MTD3055EL
    Toshiba Power MOSFETs Cross Reference Guide Original PDF 165.78KB 67
    MTD3055EL
    Motorola TMOS IV Power Field Effect Transistor(N-Channel Enhancement-Mode Silicon Gate) Scan PDF 388.88KB 6
    MTD3055EL
    Motorola TMOS power MOSFET logic level. 60 V, 10 A, Rds(on) 0.18 Ohm. Scan PDF 219.02KB 6
    MTD3055EL
    Motorola Switchmode Datasheet Scan PDF 53.5KB 1
    MTD3055EL
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 95.09KB 1
    MTD3055EL
    Unknown FET Data Book Scan PDF 54.65KB 1
    MTD3055EL
    Unknown Shortform Datasheet & Cross References Data Short Form PDF 89.06KB 1
    MTD3055EL
    National Semiconductor Power MOSFET Scan PDF 41.02KB 1
    MTD3055EL1
    Motorola TMOS power MOSFET logic level. 60 V, 10 A, Rds(on) 0.18 Ohm. Scan PDF 219.02KB 6
    MTD3055EL1
    Motorola Switchmode Datasheet Scan PDF 53.5KB 1
    SF Impression Pixel

    MTD3055 Price and Stock

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    onsemi MTD3055V

    MOSFET N-CH 60V 12A TO252-3
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    DigiKey MTD3055V Reel 2,500
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    Verical MTD3055V 5,000 440
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    • 10000 $0.63
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    Newark MTD3055V Cut Tape 5
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    Bristol Electronics MTD3055V 128
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    Rochester Electronics MTD3055V 5,000 1
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    • 1000 $0.57
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    onsemi MTD3055VL

    MOSFET N-CH 60V 12A TO252-3
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    DigiKey () MTD3055VL Reel 2,500
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    MTD3055VL Digi-Reel 1
    • 1 $1.69
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    MTD3055VL Cut Tape 1
    • 1 $1.69
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    Bristol Electronics MTD3055VL 10
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    Chip Stock MTD3055VL 8,276
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    Component Electronics, Inc MTD3055VL 1,044
    • 1 $2.31
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    • 100 $1.73
    • 1000 $1.50
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    Motorola Semiconductor Products MTD3055ELT4

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    Bristol Electronics () MTD3055ELT4 7,722
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    MTD3055ELT4 500
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    ComSIT USA MTD3055ELT4 2,500
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    onsemi MTD3055VLT4

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    Bristol Electronics () MTD3055VLT4 2,491
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    MTD3055VLT4 193
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    MTD3055VLT4 13 5
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    ComSIT USA MTD3055VLT4 56,394
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    Chip Stock MTD3055VLT4 8,545
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    Win Source Electronics MTD3055VLT4 7,045
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    • 1000 $3.43
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    Motorola Semiconductor Products MTD3055ET4

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    Bristol Electronics MTD3055ET4 2,426
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    MTD3055 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    3055V

    Abstract: MTD3055VT4 MTD3055V 369D AN569
    Contextual Info: MTD3055V Preferred Device Power MOSFET 12 Amps, 60 Volts N−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power


    Original
    MTD3055V MTD3055V/D 3055V MTD3055VT4 MTD3055V 369D AN569 PDF

    t3055vl

    Abstract: T30-55VL 3055vl MTD3055VL1 3055V AN569 MTD3055VL MTD3055VLT4
    Contextual Info: MTD3055VL Preferred Device Power MOSFET 12 Amps, 60 Volts N–Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power


    Original
    MTD3055VL r14525 MTD3055VL/D t3055vl T30-55VL 3055vl MTD3055VL1 3055V AN569 MTD3055VL MTD3055VLT4 PDF

    MTD3055V

    Abstract: mosfet DPAK
    Contextual Info: MTD3055V Preferred Device Power MOSFET 12 Amps, 60 Volts N−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power


    Original
    MTD3055V MTD3055V/D MTD3055V mosfet DPAK PDF

    MTD3055E

    Contextual Info: MOTOROLA SC XSTRS/R F bf l E T> • b3h72SM 00^0535 330 MOTb MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTD3055E TMOS IV N-Channel Enhancement-Mode Motorola Preferred Device Power Field Effect Transistor D PAK for Surface or Insertion Mount


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    b3h72SM MTD3055E DGT654G MTD3055E PDF

    Mosfet FDD

    Abstract: CBVK741B019 F63TNR FDD6680 MTD3055V
    Contextual Info: MTD3055V N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.


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    MTD3055V Mosfet FDD CBVK741B019 F63TNR FDD6680 MTD3055V PDF

    a9hv

    Abstract: MTD3055VL
    Contextual Info: MTD3055VL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional


    Original
    MTD3055VL a9hv MTD3055VL PDF

    MTD3055V

    Abstract: fairchild mosfets
    Contextual Info: MTD3055V* N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.


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    MTD3055V* MTD3055V fairchild mosfets PDF

    NDP602P

    Abstract: ADP3310-3
    Contextual Info: POWER MANAGEMENT: Linear Regulator Controllers Vcc Icc Icc in Sdown Ext Pass MOSFET Supply Input Voltage Volts mA mA Amps (Amps) to FET's ADM1052 12 ±6% ADM1051 12 ±6% 4 1 PHD055N03LT (1) MTD3055VL (1) +3.>3.6V 2.5 2.5 ±2.5 ±5mV 3>3.6V ±5mV 0.01>1A


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    PHD055N03LT MTD3055VL ADM1052 ADM1051 ADM1051A NDP602P ADP3310-3 PDF

    4614 mosfet

    Abstract: MOTOROLA 3055V 3055VL
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTD3055VL TM O S V P o w er Field E ffe c t T ran sisto r DPAK fo r S u rfa ce M ount TMOS POWER FET 12 AMPERES 60 VOLTS R DS on = 0-18 OHM N-Channel Enhancement-Mode Silicon Gate T M O S V is a new te c h n o lo g y d e sig n e d to a ch ie ve an o n -re s is ta n ce a rea p ro d u ct a bo u t o n e -h a lf th a t of sta n d a rd M O S FE Ts. This


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    0E-03 0E-02 0E-01 4614 mosfet MOTOROLA 3055V 3055VL PDF

    3055VL

    Abstract: a9hv transistor WT9 MTD3055VL u6 transistor AYRA
    Contextual Info: MTD3055VL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional


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    MTD3055VL MTD3055VL O-252 3055VL a9hv transistor WT9 u6 transistor AYRA PDF

    a7w 57

    Abstract: a7w transistor
    Contextual Info: MTD3055VL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features • 12 A, 60 V. RDS ON = 0.18 Ω @ VGS = 5 V This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC


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    MTD3055VL a7w 57 a7w transistor PDF

    DIODE MOTOROLA B34

    Abstract: MTD3055EL B34 ZENER DIODE DIODE B34 B34 motorola 369A-10 AN569 MTD3055EL1 Mq-7
    Contextual Info: MOTOROLA SC XSTRS/R F bñE D • b3b7SSM üü^fl5m b34 ■ M O T b MOTOROLA h SEMICONDUCTOR TECHNICAL DATA _ Designer's Data Sheet MTD3055EL TM OS IV Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate


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    MTD3055EL DIODE MOTOROLA B34 MTD3055EL B34 ZENER DIODE DIODE B34 B34 motorola 369A-10 AN569 MTD3055EL1 Mq-7 PDF

    mtd3055vl motorola

    Abstract: CI 4609 369A-13 AN569 MTD3055V MTD3055VL
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MTD3055V TMOS V Power Field Effect Transistor DPAK for Surface Mount M otorola Preferred Device TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = ° 1 5 OHM N-Channel Enhancement-Mode Silicon Gate


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    MTD3055VL mtd3055vl motorola CI 4609 369A-13 AN569 MTD3055V MTD3055VL PDF

    3055V

    Abstract: paste AN569 MTD3055V MTD3055V1 MTD3055VT4 t3055v
    Contextual Info: MTD3055V Preferred Device Power MOSFET 12 Amps, 60 Volts N–Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power


    Original
    MTD3055V r14525 MTD3055V/D 3055V paste AN569 MTD3055V MTD3055V1 MTD3055VT4 t3055v PDF

    013 transistor

    Abstract: MTD3055VL AN569 in Motorola Power Applications mtd3055vl motorola TMOS E-FET TMOS power FET AN569 SMD310
    Contextual Info: MOTOROLA Order this document by MTD3055VL/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MTD3055VL TMOS V Power Field Effect Transistor DPAK for Surface Mount Motorola Preferred Device TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.18 OHM N–Channel Enhancement–Mode Silicon Gate


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    MTD3055VL/D MTD3055VL MTD3055VL/D* 013 transistor MTD3055VL AN569 in Motorola Power Applications mtd3055vl motorola TMOS E-FET TMOS power FET AN569 SMD310 PDF

    a7w transistor

    Abstract: a7w 57 transistor a7w
    Contextual Info: MTD3055V* N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.


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    MTD3055V* a7w transistor a7w 57 transistor a7w PDF

    DIODE MOTOROLA B34

    Abstract: MTD3055EL B34 motorola 369A-10 AN569 MTD3055EL1
    Contextual Info: MOTOROLA SC XSTRS/R F bñE D • b3b7SSM üü^fl5m b34 ■ M O T b MOTOROLA m SEMICONDUCTOR _ TECHNICAL DATA MTD3055EL Designer's Data Sheet T M O S IV Pow er Field Effect Transistor Motorola Preferred Device N-Channel Enhancem ent-Mode Silicon Gate


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    b3b7S54 MTD3055EL DIODE MOTOROLA B34 MTD3055EL B34 motorola 369A-10 AN569 MTD3055EL1 PDF

    3055vl

    Abstract: Motorola 3055vl 3055vl motorola
    Contextual Info: MOTOROLA Order this document by MTD3055VL/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TD 3055VL TMOS V Power Field Effect Transistor DPAK for S urface Mount N-Channel Enhancement-Mode Silicon Gate T M O S V is a new te ch n o lo g y d e sig ned to achieve an o n -re s is tan ce area pro du ct ab ou t o n e -h a lf tha t of stan dard M O SFETs. This


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    MTD3055VL/D 3055VL 3055vl Motorola 3055vl 3055vl motorola PDF

    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r ’s Data S heet MTD3055V TMOS V Power Field Effect Transistor DPAK for Surface Mount M o t o r o la P re fe rre d D e v ic e TMOS POWER FET 12 AMPERES 60 VOLTS N-Channel Enhancement-Mode Silicon Gate


    OCR Scan
    0E-05 0E-04 0E-01 PDF

    3055VL

    Abstract: MTD3055VLT4 MTD3055VL
    Contextual Info: MTD3055VL Preferred Device Power MOSFET 12 Amps, 60 Volts N−Channel DPAK−3 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power


    Original
    MTD3055VL MTD3055VL/D 3055VL MTD3055VLT4 MTD3055VL PDF

    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MTD3055EL TMOS E-FET™ Power Field Effect TVansistor Motorola Preferred Device DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate This advanced E-FET is a TMOS power MOSFET designed to withstand high energy in


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    MTD3055EL PDF

    MTD3055E

    Abstract: dgtn 369A-10 AN569 MTD3055E1 diode zener 3144 voltage
    Contextual Info: M O T O R O L A SC X S T R S / R F bflE ]> b3b72SM 00^0535 330 MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTD3055E TMOS IV N-Channel Enhancement-Mode Motorola Preferred Device Power Field Effect Transistor DPAK for Surface or Insertion Mount


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    b3b72S4 MTD3055E MTD3055E dgtn 369A-10 AN569 MTD3055E1 diode zener 3144 voltage PDF

    TMOS E-FET

    Abstract: TMOS power FET AN569 MTD3055V SMD310
    Contextual Info: MOTOROLA Order this document by MTD3055V/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MTD3055V TMOS V Power Field Effect Transistor DPAK for Surface Mount Motorola Preferred Device TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.15 OHM N–Channel Enhancement–Mode Silicon Gate


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    MTD3055V/D MTD3055V MTD3055V/D* TMOS E-FET TMOS power FET AN569 MTD3055V SMD310 PDF

    3055vl

    Abstract: MTD3055VLT4 MTD3055VL
    Contextual Info: MTD3055VL Preferred Device Power MOSFET 12 Amps, 60 Volts N−Channel DPAK−3 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power


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    MTD3055VL MTD3055VL/D 3055vl MTD3055VLT4 MTD3055VL PDF