20N10 Search Results

20N10 Datasheets (14)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
20N10	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	34.25KB	1
20N100	Unknown	Shortform Semicon, Diode, and SCR Datasheets	Short Form	PDF	133.07KB	1
20N100D2	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	34.25KB	1
20N100E2	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	34.25KB	1
SLP120N10G	Maplesemi	N-Channel MOSFET with 100V drain-source voltage, 120A continuous drain current, 4.9mΩ typical RDS(on) at VGS = 10V, low Crss, fast switching, and 100% avalanche tested.	Original	PDF
JMTQ320N10A	Jiangsu JieJie Microelectronics Co Ltd	100V, 23A N-channel Enhancement Mode Power MOSFET with RDS(on) less than 32mΩ at VGS=10V, available in PDFN3x3-8L package, designed for load switching, PWM, and power management applications.	Original	PDF
JMTG320N10A	Jiangsu JieJie Microelectronics Co Ltd	N-channel enhancement mode power MOSFET with 100V drain-source voltage, 28A continuous drain current, and RDS(on) less than 30mΩ at VGS=10V in a PDFN5x6-8L package.	Original	PDF
CJAC20N10	JCET Group	CJAC20N10 N-Channel Power MOSFET with 100V drain-source voltage, 20A continuous drain current, ultra low RDS(on), high energy avalanche capability, and fast recovery drain-to-source diode for high voltage switching applications.	Original	PDF
SLB120N10G	Maplesemi	N-Channel MOSFET with 100V drain-source voltage, 120A continuous drain current, typical RDS(on) of 4.6mΩ at VGS = 10V, low input capacitance, and fast switching characteristics suitable for high-efficiency power management applications.	Original	PDF
NCEAP020N10LL	NCEPOWER	NCE AP020N10LL is an Automotive N-Channel Super Trench II Power MOSFET with 100 V drain-source voltage, 330 A continuous drain current, 1.5 mΩ typical RDS(on) at VGS = 10 V, and 175 °C maximum operating temperature.	Original	PDF
JMTC320N10A	Jiangsu JieJie Microelectronics Co Ltd	N-channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 30A continuous drain current, and RDS(on) less than 32mΩ at VGS=10V in TO-220C package.	Original	PDF
JMTK320N10A	Jiangsu JieJie Microelectronics Co Ltd	N-channel Enhancement Mode Power MOSFET JMTK320N10A with 100V drain-source voltage, 30A continuous drain current, and RDS(on) less than 30mΩ at VGS=10V, available in TO-252-3L package.	Original	PDF
SL20N10	SLKOR		Original	PDF
JMTI320N10A	Jiangsu JieJie Microelectronics Co Ltd	N-channel enhancement mode power MOSFET with 100V drain-source voltage, 30A continuous drain current, and low on-resistance of 32mΩ at VGS=10V, available in TO-251-4R package.	Original	PDF

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Infineon Technologies AG IPB120N10S405ATMA1 MOSFET N-CH 100V 120A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPB120N10S405ATMA1	Tape & Reel	10,000		1,000	1 - 10 - 100 - 1000 $1.32 10000 $1.32	Buy Now
Mouser Electronics	IPB120N10S405ATMA1		14,666			1 $3.03 10 $2.42 100 $1.80 1000 $1.32 10000 $1.32	Buy Now
Newark	IPB120N10S405ATMA1	Cut Tape	32,285		1	1 $3.58 10 $2.97 100 $2.35 1000 $1.88 10000 $1.88	Buy Now
Rochester Electronics	IPB120N10S405ATMA1		1,983		1	1 - 10 - 100 $1.33 1000 $1.19 10000 $1.12	Buy Now
EBV Elektronik	IPB120N10S405ATMA1			10 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG IPB020N10N5LFATMA1 MOSFET N-CH 100V 176A TO263-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	IPB020N10N5LFATMA1	Digi-Reel	8,689		1	1 $6.16 10 $4.13 100 $2.98 1000 $2.96 10000 $2.96	Buy Now
	IPB020N10N5LFATMA1	Cut Tape	8,689		1	1 $6.16 10 $4.13 100 $2.98 1000 $2.96 10000 $2.96	Buy Now
	IPB020N10N5LFATMA1	Tape & Reel	8,000		1,000	1 - 10 - 100 - 1000 $2.42 10000 $2.42	Buy Now
Avnet Americas	IPB020N10N5LFATMA1	Tape & Reel	12,000	18 Weeks	1,000	1 - 10 - 100 - 1000 $2.98 10000 $2.63	Buy Now
Mouser Electronics	IPB020N10N5LFATMA1		8,362			1 $6.16 10 $4.13 100 $2.99 1000 $2.42 10000 $2.42	Buy Now
Newark	IPB020N10N5LFATMA1	Cut Tape	260		1	1 $7.26 10 $5.23 100 $4.08 1000 $4.06 10000 $4.06	Buy Now
Rutronik	IPB020N10N5LFATMA1	Tape & Reel	12,000		1,000	1 - 10 - 100 - 1000 $2.69 10000 $2.69	Buy Now

Chip One Stop	IPB020N10N5LFATMA1	Cut Tape	970	0 Weeks, 1 Days	1	1 $3.90 10 $3.64 100 $3.61 1000 $3.60 10000 $3.60	Buy Now
Chip Stock	IPB020N10N5LFATMA1		13,611			1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	IPB020N10N5LFATMA1			19 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Win Source Electronics	IPB020N10N5LFATMA1		5,980			1 - 10 - 100 $3.05 1000 $3.05 10000 $3.05	Buy Now
Infineon Technologies AG IPG20N10S4L22ATMA1 MOSFET 2N-CH 100V 20A 8TDSON
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	IPG20N10S4L22ATMA1	Cut Tape	5,704		1	1 $2.34 10 $1.50 100 $1.02 1000 $0.80 10000 $0.80	Buy Now
	IPG20N10S4L22ATMA1	Digi-Reel	5,704		1	1 $2.34 10 $1.50 100 $1.02 1000 $0.80 10000 $0.80	Buy Now
	IPG20N10S4L22ATMA1	Tape & Reel	5,000		5,000	1 - 10 - 100 - 1000 - 10000 $0.65	Buy Now
Avnet Americas ()	IPG20N10S4L22ATMA1	Ammo Pack			1	1 $2.16 10 $1.33 100 $0.97 1000 $0.81 10000 $0.81	Buy Now
	IPG20N10S4L22ATMA1	Tape & Reel		12 Weeks	5,000	1 - 10 - 100 - 1000 - 10000 $0.77	Buy Now
Newark	IPG20N10S4L22ATMA1	Cut Tape	17,641		1	1 $0.48 10 $0.48 100 $0.48 1000 $0.48 10000 $0.48	Buy Now
Rochester Electronics	IPG20N10S4L22ATMA1		101,073		1	1 - 10 - 100 $0.89 1000 $0.74 10000 $0.66	Buy Now
TME	IPG20N10S4L22ATMA1		10,000		5,000	1 - 10 - 100 - 1000 - 10000 $0.86	Buy Now

Chip One Stop	IPG20N10S4L22ATMA1	Cut Tape	10,326	0 Weeks, 1 Days	1	1 $1.91 10 $1.18 100 $0.84 1000 $0.52 10000 $0.46	Buy Now
Chip Stock	IPG20N10S4L22ATMA1		87,300			1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	IPG20N10S4L22ATMA1		25,000	13 Weeks	5,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Win Source Electronics	IPG20N10S4L22ATMA1		122,530			1 - 10 - 100 $0.60 1000 $0.46 10000 $0.46	Buy Now
Infineon Technologies AG IQD020N10NM5CGSCATMA1 OPTIMOS POWER MOSFETS 25 V - 150
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	IQD020N10NM5CGSCATMA1	Cut Tape	4,700		1	1 $5.77 10 $3.86 100 $2.77 1000 $2.72 10000 $2.72	Buy Now
	IQD020N10NM5CGSCATMA1	Digi-Reel	4,700		1	1 $5.77 10 $3.86 100 $2.77 1000 $2.72 10000 $2.72	Buy Now
Mouser Electronics	IQD020N10NM5CGSCATMA1		4,480			1 $4.89 10 $3.99 100 $3.23 1000 $2.46 10000 $2.31	Buy Now
EBV Elektronik	IQD020N10NM5CGSCATMA1			40 Weeks	5,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Intertechnologies SQM120N10-3M8_GE3 MOSFET N-CH 100V 120A TO263
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	SQM120N10-3M8_GE3	Digi-Reel	2,951		1	1 $4.78 10 $3.17 100 $2.25 1000 $2.25 10000 $2.25	Buy Now
	SQM120N10-3M8_GE3	Cut Tape	2,951		1	1 $4.78 10 $3.17 100 $2.25 1000 $2.25 10000 $2.25	Buy Now
	SQM120N10-3M8_GE3	Tape & Reel	2,400		800	1 - 10 - 100 - 1000 $1.77 10000 $1.72	Buy Now
Avnet Americas	SQM120N10-3M8_GE3	Bulk	800	28 Weeks	800	1 - 10 - 100 - 1000 $1.72 10000 $1.64	Buy Now
Newark ()	SQM120N10-3M8_GE3	Bulk	800		800	1 $1.73 10 $1.73 100 $1.73 1000 $1.73 10000 $1.73	Buy Now
	SQM120N10-3M8_GE3	Cut Tape	284		1	1 $4.69 10 $3.17 100 $2.26 1000 $2.03 10000 $2.03	Buy Now
Bristol Electronics	SQM120N10-3M8_GE3		179			1 - 10 - 100 - 1000 - 10000 -	Get Quote
TME	SQM120N10-3M8_GE3		220		1	1 $4.41 10 $3.08 100 $2.54 1000 $2.54 10000 $2.54	Buy Now

Chip One Stop	SQM120N10-3M8_GE3	Cut Tape	500	0 Weeks, 1 Days	1	1 $4.68 10 $3.16 100 $3.10 1000 $2.43 10000 $2.43	Buy Now
EBV Elektronik	SQM120N10-3M8_GE3			29 Weeks	800	1 - 10 - 100 - 1000 - 10000 -	Buy Now

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20N10 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: IXGH 20N100 IXGT 20N100 IGBT VCES IC25 VCE sat tfi(typ) = 1000 V = 40 A = 3.0 V = 280 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient	Original	20N100 O-247 O-268	PDF
20N100 Contextual Info: IGBT IXGA 20N100 VCES IXGP 20N100 IC25 VCE sat = 1000 V = 40 A = 3.0 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V VGEM Transient ±30	Original	20N100 O-220AB O-263 728B1	PDF
Contextual Info: IXGA 20N100 VCES IXGP 20N100 IC25 VCE sat IGBT = 1000 V = 40 A = 3.0 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V VGEM Transient ±30	Original	20N100 O-220AB O-263 728B1	PDF
Contextual Info: Advanced Technical Information IXGA 20N100 IXGP 20N100 IGBT Symbol Test Conditions VCES IC25 VCE sat Maximum Ratings TO-220AB (IXGP) VCES T J = 25°C to 150°C 1000 V VCGR T J = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30	Original	20N100 20N100 O-220AB O-263 O-220haracteristic	PDF
Contextual Info: □ IXYS Advanced Technical Information IXGH 20N100 IXGT 20N100 IGBT Symbol Test Conditions v CES Td = 25°C to 150°C 1000 V V CGR Td = 25°C to 150°C; RGE = 1 M£i 1000 V V GES Continuous ±20 V v GEM Transient ±30 V ^C25 Tc = 25°C 40 A ^C90 Tc = 90°C	OCR Scan		PDF
irf530 Abstract: IRF130 tr irf530 20n10 20N08 MTP20N10 MTP20N08 IRF131 IRF132 IRF133 Contextual Info: _ _ _ _ _ F A jR C H i^ IRF130-133/IRF530-533 T - ! ? -" M TP20N08/20N10 / 39/ N-Channel Power MOSFETs, 20 A, 60-100 V A Schlumberger Company Power And Discrete Division_ _ _ Description These devices are n-channei, enhancement mode, power	OCR Scan	IRF130-133/IRF530-533JjlHTÃ MTP20N08/20N10 IRF130 IRF130-133 IRF530-533 MTP20N08/20N10 PC10021F IRF130-133/IRF530-533 T-39-11 irf530 tr irf530 20n10 20N08 MTP20N10 MTP20N08 IRF131 IRF132 IRF133	PDF
Contextual Info: Advanced Technical Information IXGA 20N100 IXGP 20N100 IGBT Symbol Test Conditions VCES IC25 VCE sat Maximum Ratings TO-220AB (IXGP) VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30 V	Original	20N100 O-220AB O-263	PDF
Contextual Info: IXGH 20N100 IXGT 20N100 IGBT VCES IC25 VCE sat tfi(typ) = 1000 V = 40 A = 3.0 V = 280 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient	Original	20N100 20N100 O-268 O-247 O-268AA	PDF
Contextual Info: □ IXYS Advanced Technical Information IGBT IXGA 20N100 IXGP 20N100 V CES = ^C25 V CE sat = 1000 V 40 A 3.0 V Maximum Ratings Symbol Test Conditions V CES VCGR Tj = 25°C to 150°C 1000 V Tj = 25°C to 150°C; RGE = 1 M£2 1000 V V GES Continuous ±20 V	OCR Scan	20N100 O-22QAB	PDF
11n1000 Abstract: CRP-10N-250 11N100 Contextual Info: CRP-N Series BI-DIRECTIONAL COUPLERS 5 to 1500 MHz / Wideband / Low Profile 0.2" Device / Meri-Pac / PC Mount for Auto-Insertion PRINCIPAL SPECIFICATIONS Frequency Range, MHz Model Number CRP-10N-250 CRP- 20N-250 5 - 500 5 - 500 CRP-11N-1000 100 - 1500 CRP- 20N-1000	Original	CRP-10N-250 20N-250 CRP-11N-1000 20N-1000 MIL-C-15370 25Mar96 11n1000 CRP-10N-250 11N100	PDF
Contextual Info: Advanced Technical Information IGBT IX G H 2 0 N 1 0 0 IX G T 2 0 N 1 0 0 V CES ^C25 v CE sat ¡>c Maximum Ratings Symbol Test Conditions V CES T j = 25° C to 150° C 1000 V V CGR T j = 25° C to 150° C; RGE = 1 MQ 1000 V v GES Continuous ±20 V VGEM Transient	OCR Scan	O-268 O-247 O-268	PDF
MANCHESTER ENCODER, DECODER AND CVSD SYSTEM Abstract: manchester cvsd delta modulation tutorial Ultralife Batteries variable slope delta modulation tutorial DE6492 CMX649 MICR505 20n10 voice activated switch project Contextual Info: Application Note CML Microcircuits COMMUNICATION SEMICONDUCTORS CMX649 Wireless Voice Link Design Guide AN/2WR/649Des/2 November 2004 1 Introduction The CMX649 is an innovative adaptive delta modulation ADM voice codec that was designed to serve in advanced wireless voice links. The purpose of this document is	Original	CMX649 AN/2WR/649Des/2 MANCHESTER ENCODER, DECODER AND CVSD SYSTEM manchester cvsd delta modulation tutorial Ultralife Batteries variable slope delta modulation tutorial DE6492 MICR505 20n10 voice activated switch project	PDF
Contextual Info: TOKO AMERICA INC FMK S^E ]> m ? b 3 2 0002533 T2 2 • TAI TOKO Series DC-DC Converters ■ OVERVIEW TOKO’s engineers designed these converter modules with primary emphasis on small size, lightweight and low cost. Conversion efficiencies of up to 75%. These non-floating type converters were developed for	OCR Scan	TDb7b32	PDF
20N15 Abstract: 35n05 mje13002 to92 ur3060 AN803 motorola 2N6823 isolated dc-dc mc34063 mje12007 Motorola Switchmode 1 special Contextual Info: C O N TE N TS Page What Everyone Should Know About Switching Power Supplies In tro du ctio n. Comparison w ith Linear Regulations.	OCR Scan		PDF

Cross Reference power MOSFET Abstract: irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram IFR822 Diode BYW 56 BUZ41 equivalent transistor f630 Contextual Info: FAIRCH ILD Power Products Data Book FA IR C H ILD Power Data Book A S chlum berger C om pany 1 9 86/8 7 Power and Discrete Division 1986 Fairchild Semiconductor Corporation Power and Discrete Division 4300 Redwood Highway, San Rafael, CA 94903 415 479-8000 TWX 910-384-4258	OCR Scan	T0-204AA T0-204AE T0-220AB T0-220AC Cross Reference power MOSFET irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram IFR822 Diode BYW 56 BUZ41 equivalent transistor f630	PDF
Contextual Info: Advanced Technical Information IXFK 20N120 IXFX 20N120 HiPerFETTM Power MOSFETs VDSS ID25 = 1200 V = 20 A = 0.75 Ω RDS on trr ≤ 300 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM Continuous	Original	20N120 247TM	PDF
1200 volt mosfet Abstract: 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P Contextual Info: IXYS POWER Efficiency through Technology NE W P R O D UCT B R I E F 1000V to 1200V Polar Standard and HiPerFET Power MOSFETs NEXT GENERATION N-CHANNEL POWER MOSFETS OCTOBER 2007 OVERVIEW These new 1000-1200V Standard and HiPerFETTM additions to the IXYS PolarTM Power MOSFET	Original	000-1200V IXFB30N120P IXFL30N120P IXFN30N120P IXFL32N120P IXFN32N120P PluS220 IXFV110N10PS 1200 volt mosfet 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P	PDF
120n60b Abstract: 40N30BD1 32N50 7n60c 20N60BU1 40N60A B-2160 200n60 12n60c IXGH24N50B Contextual Info: Contents IGBT V CE sat 1 TO-220 TO-263 ! TO-247 (IXGP) (IXGA) ! (IXGH) max Tc=25 °C PLUS247 (IXGX) TO-268 (IXGT) TO-264 (IXGK) miniBLOC {IXGN) Page V 300 600 40 56 ► i* G H ¿',N 30 >• IXGH 28N30 60 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 3 ÍN S 0 76 * 75 *	OCR Scan	O-220 O-263 O-247 28N30 30N30 40N30 2N100 8N100 6N100 12N10Q 120n60b 40N30BD1 32N50 7n60c 20N60BU1 40N60A B-2160 200n60 12n60c IXGH24N50B	PDF
200n60 Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120 Contextual Info: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40	Original	PLUS247 20N30 28N30 30N30 40N30 31N60 38N60 41N60 60N60 O-264 200n60 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120	PDF
7n60b Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80 Contextual Info: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3	Original	AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 142-12io8 142-16io8 19-08ho1 7n60b 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80	PDF
20n10 Abstract: MTM20N10 MTP20N10 MOSFET based SSR mtp20n08 Contextual Info: M O TO ROLA SEMICONDUCTOR TECHNICAL DATA M TM 20N 10 M T P 20 N 08 M T P 20 N 10 Designer's Data Sheet P o w er Field E ffe c t T ran sisto r IM-Channel E n h a n c e m e n t-M o d e S ilic o n G a te T M O S TMOS POWER FETs 20 AMPERES rDS on = ° -15 0H M	OCR Scan	21A-04 O-220AB 20n10 MTM20N10 MTP20N10 MOSFET based SSR mtp20n08	PDF
20n80 Abstract: 20N90 20N80A 20N100 Contextual Info: 4686226 I X Y S CORP ¡J3 ß T \| MhfibSEk O O D G E S l 3 T~ 37-13 IXGH20N80, 90, 100 IXGM20N80, 90, 100 * 2 0 A M PS, 8 0 0 -1 0 0 0 VOLTS MAXIMUM RATINGS Unit Drain-Source Voltage 1 Vd s s 800 900 1000 Vdc Drain-Gate Voltage (Rg s = 10M Ü) (1) Vd g r	OCR Scan	IXGH20N80, IXGM20N80, IXGH20N80 IXGM20N80 IXGH20N90 IXGH20N100 IXGM20N90 IXGM20N100 20n80 20N90 20N80A 20N100	PDF
1RF530 Abstract: 20n10 mtp20n10 IRF530 IRF130 IRF131 IRF132 IRF531 IRF532 IRF533 Contextual Info: ' 3469674 -û M FAIRCHILD IR f a i r c h i D E ~ 1 a M fib V M SEMICONDUCTOR ^ M A Schlumberger C om pany F 1 3 0 - 1 3 3 /IR T P 2 0 N A , 27859 F 5 3 0 - 5 3 3 0 8 /2 0 N N - C h a n n e l	OCR Scan	IRF130-133/IRF530-533 MTP20N08/20N10 O-204AA O-220AB IRF530 IRF53RATUREâ IRF130-133 IRF530-533 B4bclti74 1RF530 20n10 mtp20n10 IRF530 IRF130 IRF131 IRF132 IRF531 IRF532 IRF533	PDF
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2	PDF

20N10 Search Results

20N10 Datasheets (14)

20N10 Price and Stock

Infineon Technologies AG IPB120N10S405ATMA1

Infineon Technologies AG IPB020N10N5LFATMA1

Infineon Technologies AG IPG20N10S4L22ATMA1

Infineon Technologies AG IQD020N10NM5CGSCATMA1

Vishay Intertechnologies SQM120N10-3M8_GE3

20N10 Datasheets Context Search

20N100

irf530

11n1000

MANCHESTER ENCODER, DECODER AND CVSD SYSTEM

20N15

Cross Reference power MOSFET

1200 volt mosfet

120n60b

200n60

7n60b

20n10

20n80

1RF530

7N60B equivalent