20N10 Search Results
20N10 Datasheets (14)
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| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| 20N10 | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 34.25KB | 1 | ||
| 20N100 | Unknown | Shortform Semicon, Diode, and SCR Datasheets | Short Form | 133.07KB | 1 | ||
| 20N100D2 | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 34.25KB | 1 | ||
| 20N100E2 | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 34.25KB | 1 | ||
JMTG320N10A
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Jiangsu JieJie Microelectronics Co Ltd | N-channel enhancement mode power MOSFET with 100V drain-source voltage, 28A continuous drain current, and RDS(on) less than 30mΩ at VGS=10V in a PDFN5x6-8L package. | Original | ||||
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SLP120N10G
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Maplesemi | N-Channel MOSFET with 100V drain-source voltage, 120A continuous drain current, 4.9mΩ typical RDS(on) at VGS = 10V, low Crss, fast switching, and 100% avalanche tested. | Original | ||||
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JMTQ320N10A
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Jiangsu JieJie Microelectronics Co Ltd | 100V, 23A N-channel Enhancement Mode Power MOSFET with RDS(on) less than 32mΩ at VGS=10V, available in PDFN3x3-8L package, designed for load switching, PWM, and power management applications. | Original | ||||
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SL20N10
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SLKOR | Original | |||||
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JMTI320N10A
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Jiangsu JieJie Microelectronics Co Ltd | N-channel enhancement mode power MOSFET with 100V drain-source voltage, 30A continuous drain current, and low on-resistance of 32mΩ at VGS=10V, available in TO-251-4R package. | Original | ||||
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CJAC20N10
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JCET Group | CJAC20N10 N-Channel Power MOSFET with 100V drain-source voltage, 20A continuous drain current, ultra low RDS(on), high energy avalanche capability, and fast recovery drain-to-source diode for high voltage switching applications. | Original | ||||
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SLB120N10G
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Maplesemi | N-Channel MOSFET with 100V drain-source voltage, 120A continuous drain current, typical RDS(on) of 4.6mΩ at VGS = 10V, low input capacitance, and fast switching characteristics suitable for high-efficiency power management applications. | Original | ||||
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JMTC320N10A
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Jiangsu JieJie Microelectronics Co Ltd | N-channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 30A continuous drain current, and RDS(on) less than 32mΩ at VGS=10V in TO-220C package. | Original | ||||
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NCEAP020N10LL
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NCEPOWER | NCE AP020N10LL is an Automotive N-Channel Super Trench II Power MOSFET with 100 V drain-source voltage, 330 A continuous drain current, 1.5 mΩ typical RDS(on) at VGS = 10 V, and 175 °C maximum operating temperature. | Original | ||||
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JMTK320N10A
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Jiangsu JieJie Microelectronics Co Ltd | N-channel Enhancement Mode Power MOSFET JMTK320N10A with 100V drain-source voltage, 30A continuous drain current, and RDS(on) less than 30mΩ at VGS=10V, available in TO-252-3L package. | Original |
20N10 Price and Stock
Infineon Technologies AG
Infineon Technologies AG IPT020N10N3ATMA1Power MOSFET, N Channel, 100 V, 300 A, 0.0017 ohm, HSOF, Surface Mount - Tape and Reel (Alt: IPT020N10N3ATMA1) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPT020N10N3ATMA1 | Tape & Reel | 34,000 | 52 Weeks | 2,000 |
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IPT020N10N3ATMA1 | Tape & Reel | 5,749 | 100 |
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| IPT020N10N3ATMA1 | Cut Tape | 5,749 | 1 |
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IPT020N10N3ATMA1 | 50 |
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IPT020N10N3ATMA1 | 1 |
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IPT020N10N3ATMA1 | 53 Weeks | 2,000 |
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IPT020N10N3ATMA1 | 1,910 |
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Infineon Technologies AG IPB020N10N5LFATMA1Power MOSFET, N Channel, 100 V, 120 A, 0.002 ohm, TO-263 (D2PAK), Surface Mount - Tape and Reel (Alt: IPB020N10N5LFATMA1) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPB020N10N5LFATMA1 | Tape & Reel | 7,000 | 8 Weeks | 1,000 |
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| IPB020N10N5LFATMA1 | Ammo Pack | 1 |
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IPB020N10N5LFATMA1 | 8,367 |
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IPB020N10N5LFATMA1 | Cut Tape | 1,277 | 1 |
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| IPB020N10N5LFATMA1 | Tape & Reel | 1,277 | 10 |
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IPB020N10N5LFATMA1 | 395 |
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IPB020N10N5LFATMA1 | 9 Weeks | 1,000 |
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IPB020N10N5LFATMA1 | 5,970 |
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Infineon Technologies AG IQD020N10NM5ATMA1Power MOSFET, N Channel, 100 V, 276 A, 2050 ?ohm, TSON, 8 Pins, Surface Mount - Tape and Reel (Alt: IQD020N10NM5ATMA1) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IQD020N10NM5ATMA1 | Tape & Reel | 5,000 | 52 Weeks | 5,000 |
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IQD020N10NM5ATMA1 | 5,771 |
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IQD020N10NM5ATMA1 | 3,729 | 1 |
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IQD020N10NM5ATMA1 | 53 Weeks | 5,000 |
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Infineon Technologies AG IQD020N10NM5CGATMA1Power MOSFET, N Channel, 100 V, 273 A, 1800 uohm, TTFN, 9 Pins, Surface Mount - Tape and Reel (Alt: IQD020N10NM5CGATMA1) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IQD020N10NM5CGATMA1 | Tape & Reel | 5,000 | 52 Weeks | 5,000 |
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IQD020N10NM5CGATMA1 | 2,753 |
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IQD020N10NM5CGATMA1 | 3,610 | 1 |
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Infineon Technologies AG IPG20N10S4L35ATMA1Trans MOSFET N-CH 100V 20A 8-Pin TDSON EP T/R - Tape and Reel (Alt: IPG20N10S4L35ATMA1) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPG20N10S4L35ATMA1 | Tape & Reel | 5,000 | 39 Weeks | 5,000 |
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IPG20N10S4L35ATMA1 | 541 |
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IPG20N10S4L35ATMA1 | 212,478 | 1 |
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IPG20N10S4L35ATMA1 | 5,000 |
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