20N08 Search Results

PSR-45N08A-JQ

Abstract: PSR-20N08A-JQ 11N08 PSR-20F08S-JQ 57n08 40n08 20n08
Contextual Info: MALLORY SONALERT PRODUCTS, INC. . NEW Miniature Speaker Series Suitable for Consumer, Industrial, Medical & Transportation Applications KEY FEATURES: • • • • • Speaker Part Number PSR-13N08A-JQ PSR-18N08A-JQ PSR-20N08A-JQ PSR-28N08A-JQ PSR-36N08A-JQ

Contextual Info: Bare Miniature Speaker Bare Miniature Mylar Speaker Part Number Impedance Ohms PSR-13N08A-JQ PSR-18N08A-JQ PSR-20N08A-JQ PSR-28N08A-JQ PSR-36N08A-JQ PSR-40N08A05-JQ PSR-45N08A-JQ PSR-57N08A01-JQ 8 8 8 8 8 8 8 8 PSR-11N08S-JQ PSR-20F08S-JQ PSR-23F08S-JQ

Contextual Info: Mallory Sonalert Products Inc Sales Outline Drawing Part # PSR-20N08A-JQ Revision B Specifications: Voice Coil Impedance Ω Rated Input (W) Max. Input (W) Lowest Resonance Freq Fo (Hz) Frequency Range (Hz) Output S.P.L. (dB) Magnet Size (mm) Magnet Core Material Mylar

Contextual Info: THIS DRAWING AND DESIGN HEREON CON­ STITUTES A PROPRIETARY DESIGN OF PACKARD ELECTRIC DIVISION AND IS NOT TO BE DUPLICATED OR REPRODUCED WITH­ OUT AUTHORITY OF PACKARD ELECTRIC DIVISION. DATE AUTHORITY REVISION RECORD 20JA89 LT \J i i o DO NOT S C A L E

an086

Contextual Info: 16 14 IS 13 12 10 11 8 1 DWG STATUS DATE STG REV N/P CHG OR lAPVd APV[ 2 I 282283 MAC MAC MM OBSOLETE H8 17X06 AUTH REVISION HISTORY ZONE M M 6 4 PART NO. 1 ZONE DATE SYM , « vision r ecord HJTHOfmv :,i. j »93 H6 w m m tu rn &avises OP-93 H? 3,48+O.92/-0,5QHAS3.48*0.50

irf530

Abstract: IRF130 tr irf530 20n10 20N08 MTP20N10 MTP20N08 IRF131 IRF132 IRF133
Contextual Info: _ _ _ _ _ F A jR C H i^ IRF130-133/IRF530-533 T - ! ? -" M 20N08/20N10 / 39/ N-Channel Power MOSFETs, 20 A, 60-100 V A Schlumberger Company Power And Discrete Division_ _ _ Description These devices are n-channei, enhancement mode, power

Contextual Info: ïïl§ . R ? uA^ l NS o M S L P J ?,0,i HEPEO* CON­ STITUTES A PROPRIETARY DEWG« OF W CÎ M Ï . U -R P J R U p i y r f i W w » HOT I Rr Bl , M R E P flO ^ C ED WITH« glMj AUTHORITY OF PACKARD ELECTRIC DATE SYm { 24MR88 24MR88 C REDRAWN WITHOUT CHANGE: REVISION

M4695003

Abstract: 20N085 DELPHI E G S
Contextual Info: 12 11 10 8 SYMBOL D E F I N I T I O N M IS S IN G SYMBOLS A DIMENSION WITHOUT AN INSPECTION REPORT SYMBOL DOES NOT REQUIRE INSPECTION. IT MAY BE CONTROLLED ON THE INDIVIDUAL COMPONENT DRAWING. H TOTAL NO OF INSPECTIONS REQUIRED 3 A LAST NO. USED 14 NO M ISS IN G

Contextual Info: THIS DRAWING AND DESIGN HEREON CON­ ST IT U T E S A PROPRIETARY DESIGN OF PACKARD E LE C T R IC DIVISION AND IS NOT TO BE D UPLICATED OR REPRODUCED WITH­ OUT AUTHORITY OF PACKARD E LE C T R IC DIVISION. DATE DO NOT S C A L E SYM REVISION RECORD AUTHORITY

20N08

Abstract: 20N08L NTD20N08 NTD20N08L
Contextual Info: 20N08, 20N08L Product Preview 80 V Power MOSFET ON Semiconductor utilizes its latest MOSFET technology process to manufacture 80 V power MOSFET devices to achieve the lowest possible on–resistance per silicon area. These 80 V devices are designed for Power Management solutions in 42 V Automotive