40N08 Search Results

Contextual Info: Bare Miniature Speaker Bare Miniature Mylar Speaker Part Number Impedance Ohms PSR-13N08A-JQ PSR-18N08A-JQ PSR-20N08A-JQ PSR-28N08A-JQ PSR-36N08A-JQ PSR-40N08A05-JQ PSR-45N08A-JQ PSR-57N08A01-JQ 8 8 8 8 8 8 8 8 PSR-11N08S-JQ PSR-20F08S-JQ PSR-23F08S-JQ

Contextual Info: Mallory Sonalert Products Inc Sales Outline Drawing Part # PSR-40N08A05-JQ Revision B Specifications: Voice Coil Impedance Ω Rated Input (W) Max. Input (W) Lowest Resonance Freq Fo (Hz) Frequency Range (Hz) Output S.P.L. (dB) Magnet Size (mm) Magnet Core Material Mylar

IRFD1Z3 equivalent

Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
Contextual Info: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not

MOSFET MTH40N10

Abstract: 40n06 MTH40N10 40n08 40n10 MTH40N08 40N05 40n0
Contextual Info: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA M T H 40N 08 M T H 40N 10 M T H 40N 05 M T H 40N 06 Designer's Data Sheet P o w e r Field E ffe ct T ra n sisto r N -Ch ann el Enhancem ent-M ode S ilic o n G ate T M O S TM O S POWER FETs and AMPERES These TM O S Pow er FETs are designed fo r lo w

40N06

Abstract: 40N10 40n08 40N05 MTH40N10 40n0 MTH40N05 MTH40N08 MTH40N06
Contextual Info: M T H 40N 08 M T H 40N 10 MTH40IM05 M T H 40N 06 Designer's Data Sheet Pow e r Field Effect T ran sisto r N-Channel Enhancement-Mode Silicon Gate TMOS T M O S PO W ER FETs and A M P E R E S rDS on = 0.04 O H M 80 and 100 V O LT S rD S(on) = 0-028 O H M 50 and 60 V O LT S

MTH13N50

Abstract: MTH40N10 MTH7N50 MTH15N20 MTH25N10 MTH35N15 MTH35N05 MTH25N08 mth5n100 mth7n50 Transistor
Contextual Info: POWER TRAN SISTO RS — TM O S PLASTIC continued Plastic TM OS Power MO SFETs — TO-218AC G D S rDS(on) @ <D V BR(DSS) (Volts) Min (Ohms) Max (Amp) 1000 3 2.5 Device 950 900 550 500 450 400 350 MTH5N100 'D(Cont) (Amp) M ax PD @ Te = 25°C (W ans) M ax 5