40N10 Search Results

MINI-CIRCUITS BW-40N100W

Abstract: BW-40N100W
Contextual Info: N-Type Fixed Attenuator BW-40N100W+ 50Ω, 100W, 40 dB, DC to 4 GHz Maximum Ratings Operating Temperature Storage Temperature Features -55°C to 100°C -55°C to 100°C* Connectors N-Male to N-Female • • • • DC to 4 GHz excellent VSWR, 1.20:1 N-Male and N-Female connectors

96076

Abstract: BW-40N100W
Contextual Info: N-Type ! NEW Fixed Attenuator BW-40N100W 50Ω, 100W, 40 dB, DC to 4 GHz Maximum Ratings Operating Temperature Storage Temperature Features -55°C to 100°C -55°C to 100°C* Connectors • DC to 4 GHz • excellent VSWR, 1.20:1 • N-Male and N-Female connectors

BW-40N100W

Contextual Info: Coaxial N-Type Fixed Attenuator 50Ω 100W 40dB Maximum Ratings Operating Temperature DC to 4000 MHz Features -55°C to 100°C Storage Temperature BW-40N100W+ -55°C to 100°C* *With mated connectors. Unmated, 85°C max. Permanent damage may occur if any of these limits are exceeded.

Contextual Info: Coaxial N-Type Fixed Attenuator 50Ω 100W 40dB Maximum Ratings Operating Temperature DC to 4000 MHz Features -55°C to 100°C Storage Temperature BW-40N100W+ -55°C to 100°C* *With mated connectors. Unmated, 85°C max. • DC to 4000 MHz • excellent VSWR, 1.20:1

Contextual Info: Coaxial N-Type Fixed Attenuator 50Ω 100W 40dB Maximum Ratings Operating Temperature DC to 4000 MHz Features -55°C to 100°C Storage Temperature BW-40N100W+ -55°C to 100°C* *With mated connectors. Unmated, 85°C max. Permanent damage may occur if any of these limits are exceeded.

Contextual Info: Coaxial N-Type Fixed Attenuator 50Ω 100W Maximum Ratings Operating Temperature Storage Temperature 40dB -55°C to 100°C -55°C to 100°C* *With mated connectors. Unmated, 85°C max. Permanent damage may occur if any of these limits are exceeded. BW-40N100W+

40N10

Abstract: BW-40N100W
Contextual Info: Fixed Attenuator BW-40N100W+ Typical Performance Curves Attenuation 39.0 39.2 Attenuation dB 39.4 39.6 39.8 40.0 40.2 40.4 40.6 40.8 41.0 250 500 750 1000 1250 1500 1750 2000 2250 2500 2750 3000 3250 3500 3750 4000 2750 3000 3250 3500 3750 4000 Frequency (MHz)

40N10

Contextual Info: N-Type ! NEW Fixed Attenuator BW-40N100W 50Ω, 100W, 40 dB, DC to 4 GHz Maximum Ratings Operating Temperature Storage Temperature Features -55°C to 100°C -55°C to 100°C* Connectors N-Male to N-Female • • • • DC to 4 GHz excellent VSWR, 1.20:1

Contextual Info: Coaxial N-Type Fixed Attenuator 50Ω 100W 40dB Maximum Ratings Operating Temperature DC to 4000 MHz Features • DC to 4000 MHz • excellent VSWR, 1.20:1 • N-Male and N-Female connectors • bi-directional -55°C to 100°C Storage Temperature BW-40N100W+

Contextual Info: Coaxial N-Type Fixed Attenuator 50Ω 100W 40dB Maximum Ratings Operating Temperature DC to 4000 MHz Features -55°C to 100°C Storage Temperature BW-40N100W+ -55°C to 100°C* *With mated connectors. Unmated, 85°C max. Permanent damage may occur if any of these limits are exceeded.

BW-40N100W

Contextual Info: Fixed Attenuator BW-40N100W+ Typical Performance Data FREQUENCY ATTENUATION RETURN LOSS MHz (dB) (dB) 1.00 320.92 640.84 960.76 1280.68 1600.60 1920.52 2080.48 2560.36 2880.28 3200.20 3520.12 3680.08 3840.04 4000.00 40.49 40.53 40.63 40.63 40.61 40.55 40.46

Contextual Info: Coaxial N-Type Fixed Attenuator 50Ω 100W 40dB Maximum Ratings Operating Temperature DC to 4000 MHz Features • DC to 4000 MHz • excellent VSWR, 1.20:1 • N-Male and N-Female connectors • bi-directional -55°C to 100°C Storage Temperature BW-40N100W+

BW-40N100W

Contextual Info: N-Type ! NEW Fixed Attenuator BW-40N100W 50Ω, 100W, 40 dB, DC to 4 GHz Maximum Ratings Operating Temperature Storage Temperature Features -55°C to 100°C -55°C to 100°C* Connectors N-Male to N-Female • • • • DC to 4 GHz excellent VSWR, 1.20:1

BW-40N100W

Abstract: 40N10
Contextual Info: Coaxial N-Type Fixed Attenuator 50Ω 100W 40dB Maximum Ratings Operating Temperature DC to 4000 MHz Features -55°C to 100°C Storage Temperature BW-40N100W+ -55°C to 100°C* *With mated connectors. Unmated, 85°C max. Permanent damage may occur if any of these limits are exceeded.

F40N10LE

Abstract: 100V 10A NMOS TO220 40n10le 247 1334 RF1S40N10LE RF1S40N10LESM RF1S40N10LESM9A RFG40N10LE RFP40N10LE FP40N10L
Contextual Info: S E M I C O N D U C T O R 40N10LE, 40N10LE, 40N10LE, 40N10LESM 40A, 100V, ESD Rated, Avalanche Rated, Logic Level N-Channel, Enhancement-Mode Power MOSFETs July 1996 Features • • • • • • • Packages JEDEC STYLE TO-247 40A, 100V rDS ON = 0.040Ω

40n10le

Abstract: F40N10LE 40N10 FP40N10L RFP40N10LE RF1S40N10LESM RF1S40N10LESM9A RFG40N10LE TB334 FG40N10L
Contextual Info: 40N10LE, 40N10LE, 40N10LESM Data Sheet January 2002 40A, 100V, 0.040 Ohm, Logic Level N-Channel Power MOSFETs Features • 40A, 100V These N-Channel enhancement mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes

Contextual Info: 40N10F7 N-channel 100 V, 0.02 Ω typ., 10 A, STripFET VII DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 package Datasheet − production data Features Order code VDS RDS on max ID PTOT 40N10F7 100 V 0.024 Ω 10 A 5W • Ultra low on-resistance 1

IRFD1Z3 equivalent

Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
Contextual Info: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not

40n10le

Abstract: F40N10LE 40A100V RF1S40N10LESM RF1S40N10LESM9A RFG40N10LE RFP40N10LE TB334 F40N10
Contextual Info: 40N10LE, 40N10LE, 40N10LESM Data Sheet October 1999 40A, 100V, 0.040 Ohm, Logic Level N-Channel Power MOSFETs File Number 4061.5 Features • 40A, 100V These N-Channel enhancement mode power MOSFETs are manufactured using the latest manufacturing process

f40n10le

Contextual Info: 40N10LE, 40N10LE, 40N10LESM Data Sheet Title FG4 10L P40 0LE 1S4 10L M bt A, 0V, 40 m, gic vel anwer OSTs) utho October 1999 40A, 100V, 0.040 Ohm, Logic Level N-Channel Power MOSFETs Features These N-Channel enhancement mode power MOSFETs are manufactured using the latest manufacturing process

MTM13N50E

Abstract: P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E
Contextual Info: ir tmos Cross-Reference The follow ing table represents a cro ss-re fe re n ce guide for all T M O S P ow er M O SFETs w hich are m an ufacture d directly by M otorola. W here the M otorola part nu m be r differs from the Industry part num ber, the M otorola de vice is a “form , fit and fu n ctio n ”

MOSFET MTH40N10

Abstract: 40n06 MTH40N10 40n08 40n10 MTH40N08 40N05 40n0
Contextual Info: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA M T H 40N 08 M T H 40N 10 M T H 40N 05 M T H 40N 06 Designer's Data Sheet P o w e r Field E ffe ct T ra n sisto r N -Ch ann el Enhancem ent-M ode S ilic o n G ate T M O S TM O S POWER FETs and AMPERES These TM O S Pow er FETs are designed fo r lo w

40N06

Abstract: 40N10 40n08 40N05 MTH40N10 40n0 MTH40N05 MTH40N08 MTH40N06
Contextual Info: M T H 40N 08 M T H 40N 10 MTH40IM05 M T H 40N 06 Designer's Data Sheet Pow e r Field Effect T ran sisto r N-Channel Enhancement-Mode Silicon Gate TMOS T M O S PO W ER FETs and A M P E R E S rDS on = 0.04 O H M 80 and 100 V O LT S rD S(on) = 0-028 O H M 50 and 60 V O LT S

F1S40N10

Abstract: 40N10 TA9846 rfp40n10
Contextual Info: HARRIS S E M I C O N D U C T O R 40N10, 40N10, 40N10, 40N10SM 40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 40A,100V These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses fea­