IRF610
Abstract: IRF612 irf P 611 IRF610-613 IRF611 IRF613 MTP2N18 MTP2N20
Contextual Info: 3469674 FAIRCHILD SEMICONDUCTOR ? IRF610-613 r~ 3 ? -d ? MTP2N18/2N20 N-ChdnflGl POWST ft/IOSFETSj 3.5 A, 150-200 V b h m b f a ir c h il d A Schlumberger Company Power And Discrete Division TO-220AB Description These devices are n-channel, enhancement mode, power
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irf610-613mtp2n18/2n20o-22qabirf610+8irf611irf612irf613mtp2n18nitp2n20irf610/612irf p 611mtp2n20
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mtp3n6u
Abstract: MTP2P45 MTP1N60 MTP1N95 MTP2N20 MTP2N25 MTP2N35 MTP2N40 MTP2N45 MTP2N50
Contextual Info: - 286 - m % ít f ft X t Vd s or * Vd g € V £ n fé (Ta=25tî) Vos (V) Pd Id I gss * /CH * /CH (A) (W) (nA) MTP1N6Û MOT N 600 ±20 1.0 40 MTP1N95 MOT N 950 ±20 1 75 MTP2N18 MOT N 180 ±20 2.0 50 MTP2N20 MOT N 20Q ±20 2.0 50 MTP2N25 MOT N 250 ±20 2
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mtp1n60o-220abmtp1n95mtp3n45+10mtp3n50mtp3n50emtp3n6umtp2p45mtp2n20mtp2n25mtp2n35mtp2n40mtp2n45mtp2n50
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IRF610
Abstract: 1RF610-613 1RF610 IRF612 IRF611 IRF613 MTP2N20 irf 613 IRF610-613 MTP2N18
Contextual Info: 3469674 FAIRCHI LD S E M I C O ND UC TO R TiTi PE B 3 M £3 ^ Ez,7 M IRF610-613 7'- ?- <3? MTP2N18/2N20 N-Channel Power MOSFETs, 3.5 A, 150-200 V • u ■naïf— — f a ir c h il d A Schlum berger Com pany Power And Discrete Division D e s c rip tio n Th ese devices are n-channel, enhancement mode, power
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irf610-613mtp2n18/2n20irf610/612nitp2n20+11mtp2n18irf611/613pcu100firf6101rf610-6131rf610irf612irf611irf613mtp2n20irf 613
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1RF710
Contextual Info: N-Channel Power MOSFETs IRF510 IRF512 IRF513 MTP4N08 MTP4N10 IRF612 MTP2N18 MTP2N20 IRF711 •d nC Qfl Max C|M (pF) M in Max Co m (PF) Min Max 7.5 200 100 30 A1 2 7.5 200 100 30 A1 0.8 2 7.5 200 100 30 A1 0.25 0.8 2 7.5 200 100 30 4.5 1 0.8 2 7.5 200 100
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irf510irf511irf512irf513+7mtp4n08mtp4n10irf610irf611irf612irf6131rf710
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GG88
Abstract: T3901
Contextual Info: This N-Channel Power MOSFETs IRF510 By IRF512 Its IRF513 MTP4N10 IRF610 IRF612 MTP2N18 MTP2N20 IRF711 C rw Max PR Min Max (PR Min Max 7.5 200 100 30 A1 2 7.5 200 100 30 A1 0.8 2 7.5 200 100 30 A1 0.25 0.8 2 7.5 200 100 30 f1 4.5 1 0.8 2 7.5 200 100 30 A1
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d03711bgg8888t-39-01gg88+1t3901
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sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157
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2sc429gtm2sc4582sc458lg2sc503+162sc5042sc5102sc5122sc5192sc520a2sc594sn76131tlo72cptoshiba 2n3055m53207p2n3055 toshibakia7313apkia7640apla5530m5l8155ptbb1458b
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EATON CM20A
Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid ing complete service, fast delivery and in-depth inventory. Our main
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eaton cm20aa5 gne mosfethall sensor 44e 4022n8491+6ftg 1087 striac bcr 10kmfeb3tsmd transistor marking 352asharp eia 577 sharp color tv schematic diagrammp-130 m mh-ce 10268
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MTP2N18
Abstract: MTP2N20 511 MOSFET TRANSISTOR motorola 221A-06 AN569
Contextual Info: MOTOROLA SC XSTRS/R F bflE D b3b7254 GOTAbBH 3ÔS MOTOROLA • SEMICONDUCTOR I TECHNICAL DATA Designer's Data Sheet P o w e r Field E ffe c t T ran sisto r N-Channel Enhancement-Mode Silicon Gate TMOS POWER FETs 2 AMPERES RDS(on) = 1-8 OHMS 200 VOLTS T h is T M O S P o w e r FET is d e s ig n e d fo r m e d iu m v o lta g e ,
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b3b7254iflb34mtp2n20b3b725m+60ch6b36110tbmtp2n18511 mosfet transistor motorola221a-06an569
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Cross Reference power MOSFET
Abstract: irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram IFR822 Diode BYW 56 BUZ41 equivalent transistor f630
Contextual Info: FAIRCH ILD Power Products Data Book FA IR C H ILD Power Data Book A S chlum berger C om pany 1 9 86/8 7 Power and Discrete Division 1986 Fairchild Semiconductor Corporation Power and Discrete Division 4300 Redwood Highway, San Rafael, CA 94903 415 479-8000 TWX 910-384-4258
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t0-204aat0-204aet0-220abt0-220ac+10cross reference power mosfetirf 3502 mosfetsd500kdirf3203mosfet irf equivalent booksem 2106 inverter diagramifr822diode byw 56buz41 equivalenttransistor f630
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MTP4N20
Abstract: MTP8N18 MTP5N40 mtp8n20 mtp4n35 IRF612 MTH8P20 power mosfets to 204aa T0-204AE MTM2P50
Contextual Info: POWER TRANSISTORS — TMOS continued V b R(DSS) (Volt*) Min (Ohms) Max (Amp) 500 6 3 DS(on) @ >D Device 450 MTM2P50 >D(Contl (Amp) Max PD @ TC = 25-C (Watts) Max Package 2 75 204AA MTP2P50 220AB MTM2P45 204AA 220A8 MTP2P45 200 0.7 4 MTM8P20 1 2.5 MTM5P20
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o-218o-22qabmtm2p50204aa+13mtp2p50220abmtm2p45mtp2p45mtp4n20mtp8n18mtp5n40mtp8n20mtp4n35irf612mth8p20power mosfets to 204aat0-204ae
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IRF740 "direct replacement"
Abstract: irf9640 REPLACEMENT GUIDE IRF9540 replacement IRF640 irf510 2Sk350 HITACHI IRF9613 rca9213a buz11 cross reference sgsp467 fu120
Contextual Info: CROSS REFERENCE GUIDE POWER MOSFETs Inter national Rectifier SAMSUNG Direct Replace ment Inter national Rectifier SAMSUNG Direct Replace ment Inter national Rectifier SAMSUNG Direct Replace ment Inter national Rectifier SAMSUNG Direct Replace
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irf510irf511irf512irf513+16irf520irf521irf522irf523irf610irf611irf740 "direct replacementirf9640 replacement guideirf9540 replacementirf640 irf5102sk350 hitachiirf9613rca9213abuz11 cross referencesgsp467fu120
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irf630 irf640
Abstract: MTP8N18 MTP4N18 MTP4N20 MOTOROLA IRF630 MTP5n18 MTP8N20 IRF710 IRF712 IRF720
Contextual Info: POWER TRANSISTORS — TMOS PLASTIC continued Plastic TMOS Power MOSFETs — TO-220AB (continued) CASE 221A-02 (Ohms) Max (Amp) 400 5 0.8 1 Device IRF712 1.3 20 2 50 1.5 20 MTP2N40 3.6 0.8 IRF710 3.3 1.5 MTP3N40 2.5 1.8 1.5 75 IRF722 2.5 40 IRF720 3 MTP4N40
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t0-220ab21a-02irf712mtp2n40+13irf710mtp3n40irf722irf720mtp4n40irf732irf630 irf640mtp8n18mtp4n18mtp4n20motorola irf630mtp5n18mtp8n20
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TP2N20
Contextual Info: MOTOROLA SC XSTRS/R F bflE T> b3b7254 GDTflbBH 3ÔS « R O T h MOTOROLA SEM IC O N D U C T O R TECHNICAL DATA Designer's Data Sheet M TP2N20 P o w e r Field E ffe c t T ra n sisto r N-Channel Enhancem ent-Mode Silicon Gate T M O S P O W E R FETs 2 AM PERES
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b3b7254tp2n20o-220aby145m+3221d-02o-220314b03
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