IRF711 Search Results

IRF710

Abstract: IRF711 100-C IRF712 IRF713
Contextual Info: Standard Power MOSFETs- IRF710, IRF711, IRF712, IRF713 File Number Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors 1.3 A and 1.5 A, 350 V - 400 V fDsion = 3.6 O and 5 fi

Contextual Info: IRF711 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)350 V(BR)GSS (V)20 I(D) Max. (A)2.0# I(DM) Max. (A) Pulsed I(D)1.2# @Temp (øC)100 IDM Max (@25øC Amb)5# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)36# Minimum Operating Temp (øC)-55õ

1RF710

Contextual Info: N-Channel Power MOSFETs IRF510 IRF512 IRF513 MTP4N08 MTP4N10 IRF612 MTP2N18 MTP2N20 IRF711 •d nC Qfl Max C|M (pF) M in Max Co m (PF) Min Max 7.5 200 100 30 A1 2 7.5 200 100 30 A1 0.8 2 7.5 200 100 30 A1 0.25 0.8 2 7.5 200 100 30 4.5 1 0.8 2 7.5 200 100

GG88

Abstract: T3901
Contextual Info: This N-Channel Power MOSFETs IRF510 By IRF512 Its IRF513 MTP4N10 IRF610 IRF612 MTP2N18 MTP2N20 IRF711 C rw Max PR Min Max (PR Min Max 7.5 200 100 30 A1 2 7.5 200 100 30 A1 0.8 2 7.5 200 100 30 A1 0.25 0.8 2 7.5 200 100 30 f1 4.5 1 0.8 2 7.5 200 100 30 A1

P710R

Abstract: MOSFET IRF 713 IIRF713FI IRF710R IRF711R IRF712R IRF713R 92CS-4M39 all dioda 1RF711
Contextual Info: Rugged Power MOSFETs_ _ _— .— . - IRF710R, IRF711R, IRF712R, IRF713R Fi|e Number 2000 Avalanche Energy Rated N-Channel Power MOSFETs 1.5A and 1.3A, 400V-350V rDS on = 3.60 and 5.00 N -C H AN N EL E N H A N C E M E N T M OD E

IRF710

Abstract: irf713
Contextual Info: W vys S IRF710, IRF711, IRF712, IRF713 S e m ico n d ucto r y 7 1.7A and 2.0A, 350V and 400V, 3.6 and 5.0 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 1,7A and 2.0A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate

irf710 "spice model"

Abstract: IRF710 IRF713 AN-975 1RF713 Diode Gfg 45 IRF712
Contextual Info: HE 0 I T- 3 T-// 4055455 0000520 7 | INTERNATIONAL Data Sheet No. PD-9.327I R EC TIFIER INTERNATIONAL RECTIFIER IÖR REPETITIVE AVALANCHE AND dv/dt RATED* IRF710 HEXFET TRANSISTO RS i R F T n n & Zìi N-CHANNEL IRF712 IRF713 Product Summary 400 Volt, 3.6 Ohm HEXFET

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

IRF470

Abstract: IRFP240R IRF840CF IRF449 IRF340A irf520 power IRF341R IRFP20 irf460 to-247 IRF331R
Contextual Info: STI Type: IRF331 Notes: Breakdown Voltage: 350 Continuous Current: 5.5 RDS on Ohm: 1.0 Trans Conductance Mhos: 3.0 Trans Conductance A: 3.0 Gate Threshold min: 2.0 Gate Threshold max: 4.0 Resistance Switching ton: 30 Resistance Switching toff: 55 Resistance Switching ID: 3.0

Contextual Info: SAMSUNG ELECTRONICS INC 7 ^ 4 1 4 2 GÜ1220B 4GG « S U G K N-CHANNEL POWER MOSFETS bME D IRF710/711/712/713 FEATURES • • • • • • • Lower Rds on Improved inductive ruggedness Fast switching times Rugged polysillcon gate cell structure Lower input capacitance

STM820

Abstract: STM-430 STM-741 STM-820 STM422 stm360 STM322 STM3600 STM431 STM-841
Contextual Info: SEMICONDUCTOR TECHNOLOGY OSE T> SEMICONDUCTOR TECHNOLOGY, INC. fll3bM50 D00D231 1 T- 3^-01 3131 S.E. Jay Street Stuart, Florida 34997 407 283-4500 • TWX - 510-953-7511 FAX 407-286-8914 HIGH VOLTAGE MOS POWER FIELD EFFECT TRANSISTORS (N-CHANNEL) STI Type

1rf740

Abstract: 1RF840 1rf820 1RF634 1RF630 1rf730 IRF810 1RF645 IRF112 IRF645
Contextual Info: - 254 - f M £ tt ft X Vd s or € £ Vg s fé < T a = 2 5 cC Id Pd ÏI Ig s s Id s s th) ft Ta=25‘ C) Ds(on) Vi>s= I d (on) g fs Ciss Coss Crss (*typ) (* typ) (*typ) * /CH min Vg s m ax Vd s (max) 1D (nA) (max) (max) (max) (pF) (pF) (pF) $1- B m % Vg s = 0

IRF710

Abstract: 1RF710 2N40 TT 2158 IRF710-713 MTP2N35 MTP2N40 Ac,713
Contextual Info: 3469674 FAIRCHILD SEMICONDUCTOR A4 -—- y.OOSTlULi ¿!^q J/LB d 4 b [ib74 IRF710-713 T MTP2N35/2N40 N-Channel Power MOSFETs, 2.25 A, 350-400 V £ Û S S Ü ii£ A Schlumberger Company Power And Discrete Division

1RF630

Abstract: irf810 1RF540 1RF530 1RF620 1rf740 ferranti 1RF634 RF543 IRF9613
Contextual Info: - 244 - ä! € tt f # t Vd s or € * $ fg Ta=25‘ C Vg s • f Vd g )V (V) (V) ie. IGSS Pd Id * /CH * /CH (A) m Vg s th) ID S S max (nA) Vg s (V) (MA) Vd s (V) 14 Coss Crss 5* m. ffi % V g s =0 *typ (A) Id (A) Vg s (V) *typ (S) (*typ) (max) (pF) Id (A)

IRFZ30

Abstract: IRFZ45 IRFZ32 irfz IRFZ12 THOMSON DISTRIBUTOR 58e d IRFZ20 IRFZ25 THOMSON 58E THOMSON 58E CASE OUTLINE
Contextual Info: THOriSÜN/ DISTRIBUTOR SflE D • ÌOat.073 OOOSaDl HEXFET Powermosfets L^ l m TCSK intemaraonal Rectifier Plastic Insertable Package T0-220 N-Channel Part Number V p s Drain Source Voltage Volts R0S(on) On-State Resistance (Ohms) Iq Continuous Drain Current

1rf730

Abstract: 1rf740 1RF840 1RF630 IRF810 1RF711 IRFI13 IRF643 IRF644 IRF711
Contextual Info: - 254 - f M tt £ ft X Vd s or € £ Vg s fé < T a = 2 5 cC Id Pd ÏI Ig s s Id s s Vg s th) ft % Vi>s= Ta=25‘ C) I d (on) D s (o n ) g fs Ciss Coss Crss (*typ) (* typ) (*typ) (max) (max) (max) (pF) (pF) (pF) Vg s = 0 Vg s * /CH Vd g * /CH min Vg s

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

IRFZ25

Abstract: IRF512 IRF51 IRFZ42 IRFZ30
Contextual Info: n c A r c International üç»!Rectifier I Power MOSFETs Plastic Insertable Package TO-220 N-Channel Part Number IRFZ12 IRFZ10 IRFZ22 IRFZ20 IRFZ32 IRFZ30 IRFZ42 IRFZ40 Vqs Drain Source Voltage Volts RDS(on) On-State Resistance (Ohms) ID Continuous Drain Current

IRF 544 N MOSFET

Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Contextual Info: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no

Cross Reference power MOSFET

Abstract: irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram IFR822 Diode BYW 56 BUZ41 equivalent transistor f630
Contextual Info: FAIRCH ILD Power Products Data Book FA IR C H ILD Power Data Book A S chlum berger C om pany 1 9 86/8 7 Power and Discrete Division 1986 Fairchild Semiconductor Corporation Power and Discrete Division 4300 Redwood Highway, San Rafael, CA 94903 415 479-8000 TWX 910-384-4258

MTM13N50E

Abstract: P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E
Contextual Info: ir tmos Cross-Reference The follow ing table represents a cro ss-re fe re n ce guide for all T M O S P ow er M O SFETs w hich are m an ufacture d directly by M otorola. W here the M otorola part nu m be r differs from the Industry part num ber, the M otorola de vice is a “form , fit and fu n ctio n ”

1RF640

Abstract: 1rf630 IRF810 1RF633 1RF634 1RF522 1rf740 Rf644 IRF530 IRF533
Contextual Info: - £> tt £ * f m V Vd s or € * Vdg Hr V £ Vg s tS eg. (Ta=25*0) Id Pd loss I gss Vg s th) 14 ft lo(on) F Ds(on) Vd s = g fs Ciss Coss * /CH * /CH (A) m (nA) Vg s (V) ( m A) Vd s (V) min max (V) (V) *typ Id (*typ) (max) (*typ) (max) (max) (S) (A) (pF)

1rf740

Abstract: 1RF840 1rf730 IRF810 1RF640 1RFD110 IRF9613 irf9620 IRF9640 IRFI13
Contextual Info: - 254 - f M £ tt ft X Vd s or € £ Vg s < T a = 2 5 cC Id Pd ÏI Ig s s Id s s Vg s th) % Vi>s= ft Ta=25‘ C) I d (on) D s(o n ) g fs Ciss Coss Crss (*typ) (* typ) (*typ) * /CH min Vg s m m ax Vd s (max) 1D (nA) (max) (max) (max) (pF) (pF) (pF) $1-

YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509