1RF710
Contextual Info: N-Channel Power MOSFETs IRF510 IRF512 IRF513 MTP4N08 MTP4N10 IRF612 MTP2N18 MTP2N20 IRF711 •d nC Qfl Max C|M (pF) M in Max Co m (PF) Min Max 7.5 200 100 30 A1 2 7.5 200 100 30 A1 0.8 2 7.5 200 100 30 A1 0.25 0.8 2 7.5 200 100 30 4.5 1 0.8 2 7.5 200 100
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irf510irf511irf512irf513+7mtp4n08mtp4n10irf610irf611irf612irf6131rf710
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GG88
Abstract: T3901
Contextual Info: This N-Channel Power MOSFETs IRF510 By IRF512 Its IRF513 MTP4N10 IRF610 IRF612 MTP2N18 MTP2N20 IRF711 C rw Max PR Min Max (PR Min Max 7.5 200 100 30 A1 2 7.5 200 100 30 A1 0.8 2 7.5 200 100 30 A1 0.25 0.8 2 7.5 200 100 30 f1 4.5 1 0.8 2 7.5 200 100 30 A1
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d03711bgg8888t-39-01gg88+1t3901
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5N05
Abstract: 5n06 MTP5N05 MTP5N06 MTP4N08 MTP4N10 5n0506
Contextual Info: <8> MTP4N08, MTP5N05 MTP4N10, MTP5N06 MOTOROLA D e s i g n e r ’s D a t a S h e e t 4.0 and 5.0 AMPERE N-CHANNEL TMOS POWER FET N -C H A N N E L ENHANCEM ENT M ODE SILICON GATE TM O S POWER FIELD EFFECT TRANSISTO R rDS on = 0-8 OHM 80 and 100 VOLTS These TMOS Power FETs are designed for low voltage, high
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mtp4n08mtp5n05mtp4n10mtp5n06+35n055n065n0506
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MTP3N80
Abstract: mtp4n50e MTP3N95 MTP4N05L MTP4N06L MTP4N08 MTP4N40E MTP4N45 MTP4N50 P180
Contextual Info: - M £ tt ± f £ t Vd s or € Vg s Vd g % V M (Ta:=25°C) * /CH * /CH (A) m (V) MTP3N80 MOT N 800 ±20 MTP3N95 MOT N 950 ±20 MTP3P25 MOT P MTP4N05L MOT MTP4N06L MOT MTP4N08 MOT MTP4N10 MOT MTP4N40E MOT MTP4N45 MOT N Ig s s Pd Id (nA) Vg s (V) < M A) Vd s
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mtp3n80o-220abmtp3n95mtp3p26+10t0-220abmtp4n05lmtp5p18mtp4n50emtp4n06lmtp4n08mtp4n40emtp4n45mtp4n50p180
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IRF510
Abstract: Gate Drive circuit for irf510 irf510 power IRF5105 7937 4N10 DD57 IRF510-513 IRF511 IRF512
Contextual Info: 3469674 FAIRCHILD SEMICONDUCTOR f l 14 D e I 3 4 ^ 7 4 DGETTBM fl I IRF510-513 MTP4N08/4N10 T 3 9 // N-Channel Power MOSFETs, 5.5 A, 60-100 V FA IR C H ILD A Schlumberger Company Power And Discrete Division Description TO-220AB These devices are n-channel, enhancement mode, power
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irf510-513mtp4n08/4n10o-220abirf510+11irf511irf512irf513mtp4n08mtp4n10gate drive circuit for irf510irf510 powerirf510579374n10dd57
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sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157
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2sc429gtm2sc4582sc458lg2sc503+162sc5042sc5102sc5122sc5192sc520a2sc594sn76131tlo72cptoshiba 2n3055m53207p2n3055 toshibakia7313apkia7640apla5530m5l8155ptbb1458b
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EATON CM20A
Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid ing complete service, fast delivery and in-depth inventory. Our main
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eaton cm20aa5 gne mosfethall sensor 44e 4022n8491+6ftg 1087 striac bcr 10kmfeb3tsmd transistor marking 352asharp eia 577 sharp color tv schematic diagrammp-130 m mh-ce 10268
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IRF722P
Abstract: IRF732P SGSP3055 IRF730P 1rfp450 IRF510 SGSP312 IRF540FI irf522p MTP20N10
Contextual Info: CROSS REFERENCE SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI 2SK312 2SK313
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2sk2952sk2962sk3082sk310+162sk3112sk3122sk3132sk3192sk3202sk324irf722pirf732psgsp3055irf730p1rfp450irf510sgsp312irf540fiirf522pmtp20n10
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Cross Reference power MOSFET
Abstract: irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram IFR822 Diode BYW 56 BUZ41 equivalent transistor f630
Contextual Info: FAIRCH ILD Power Products Data Book FA IR C H ILD Power Data Book A S chlum berger C om pany 1 9 86/8 7 Power and Discrete Division 1986 Fairchild Semiconductor Corporation Power and Discrete Division 4300 Redwood Highway, San Rafael, CA 94903 415 479-8000 TWX 910-384-4258
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t0-204aat0-204aet0-220abt0-220ac+10cross reference power mosfetirf 3502 mosfetsd500kdirf3203mosfet irf equivalent booksem 2106 inverter diagramifr822diode byw 56buz41 equivalenttransistor f630
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MTP8N10
Abstract: MTP25N10 mtp7n06 MTP20N10 MTP7N15 irf510 MTP12N10 MTP5N06 MTP5N15 MTP20N08
Contextual Info: POWER TRAN SISTO RS — T M O S PLASTIC continued Plastic TM OS Power MOSFETS — TO-220AB (continued) C A S E 221A -02 rD S(on) (Ohm s) M ax (Amp) 150 2.4 1.25 20 2.5 1.5 MTP3N15 3 50 2.5 IRF623 4 40 0.9 MTP5N15 5 50 0.8 IRF621 4 40 75 0.7 3.5 M TP7N15
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o-220ab21a-02irf613irf611+14mtp3n15irf623mtp5n15irf621mtp7n15irf633mtp8n10mtp25n10mtp7n06mtp20n10irf510mtp12n10mtp5n06mtp20n08
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IRF510
Abstract: Gate Drive circuit for irf510 Fairchild Semiconductor DS-513 MTP4N10 IRF-510 DD57 IRF510-513 IRF511 IRF512 IRF513
Contextual Info: 3469674 FAIRCHILD SEMICONDUCTOR D iT l 3 4 1 ^ 7 4 DGH7TB4_fl IRF510-513 MTP4N08/4N10 T 3 9 // N-Channel Power MOSFETs, 5.5 A, 60-100 V FA IR C H ILD A Schlumberger Company Power And Discrete Division Description These devices are n-channel, enhancement mode, power
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irf510-513mtp4n08/4n10o-220abirf510+9irf511irf512irf513mtp4n08mtp4n10gate drive circuit for irf510fairchild semiconductor ds-513irf-510dd57
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IRF740 "direct replacement"
Abstract: irf9640 REPLACEMENT GUIDE IRF9540 replacement IRF640 irf510 2Sk350 HITACHI IRF9613 rca9213a buz11 cross reference sgsp467 fu120
Contextual Info: CROSS REFERENCE GUIDE POWER MOSFETs Inter national Rectifier SAMSUNG Direct Replace ment Inter national Rectifier SAMSUNG Direct Replace ment Inter national Rectifier SAMSUNG Direct Replace ment Inter national Rectifier SAMSUNG Direct Replace
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irf510irf511irf512irf513+16irf520irf521irf522irf523irf610irf611irf740 "direct replacementirf9640 replacement guideirf9540 replacementirf640 irf5102sk350 hitachiirf9613rca9213abuz11 cross referencesgsp467fu120
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