IRFL9110 Search Results
IRFL9110 Datasheets (13)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| IRFL9110 | Toshiba | Power MOSFETs Cross Reference Guide | Original | 165.78KB | 67 | ||
| IRFL9110 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 100V 1.1A SOT223 | Original | 9 | |||
| IRFL9110 | International Rectifier | HEXFET Power MOSFET | Scan | 175.13KB | 6 | ||
| IRFL9110 | International Rectifier | Power MOSFET(Vdss=-100V, Rds(on)=1.2ohm, Id=-1.1A) | Scan | 175.14KB | 6 | ||
| IRFL9110 | Unknown | Shortform IC and Component Datasheets (Plus Cross Reference Data) | Short Form | 128.64KB | 1 | ||
| IRFL9110 | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 34.67KB | 1 | ||
| IRFL9110PBF | International Rectifier | HEXFET Power MOSFET ( VDSS = -100V , RDS(on) = 1.2 Ohm , ID = -1.1A ) | Original | 224.76KB | 9 | ||
| IRFL9110PBF | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 100V 1.1A SOT223 | Original | 9 | |||
| IRFL9110TR | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 100V 1.1A SOT223 | Original | 9 | |||
| IRFL9110TR | International Rectifier | -100V Single P-Channel HEXFET Power MOSFET in a SOT-223 package | Scan | 175.13KB | 6 | ||
| IRFL9110TR | International Rectifier | HEXFET Power MOSFET | Scan | 175.13KB | 6 | ||
| IRFL9110TR | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 34.67KB | 1 | ||
| IRFL9110TRPBF | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 100V 1.1A SOT223 | Original | 9 |
IRFL9110 Price and Stock
Vishay Intertechnologies IRFL9110TRPBF-BE3MOSFET P-CHANNEL 100V - Product that comes on tape, but is not reeled (Alt: 80AH8948) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IRFL9110TRPBF-BE3 | Ammo Pack | 1 |
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| IRFL9110TRPBF-BE3 | Tape & Reel | 36 Weeks | 2,500 |
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IRFL9110TRPBF-BE3 | 4,472 |
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IRFL9110TRPBF-BE3 | Tape & Reel | 2,228 | 10 |
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| IRFL9110TRPBF-BE3 | Cut Tape | 2,228 | 1 |
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| IRFL9110TRPBF-BE3 | Tape & Reel | 2,500 |
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IRFL9110TRPBF-BE3 | Reel | 2,500 |
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IRFL9110TRPBF-BE3 | 2,194 | 1 |
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IRFL9110TRPBF-BE3 | 2,500 |
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IRFL9110TRPBF-BE3 | 38 Weeks | 2,500 |
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IRFL9110TRPBF-BE3 | 285,000 | 39 Weeks | 2,500 |
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Vishay Intertechnologies IRFL9110TRPBFPower MOSFET, P Channel, 100 V, 1.1 A, 1.2 ohm, SOT-223, Surface Mount - Tape and Reel (Alt: IRFL9110TRPBF) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IRFL9110TRPBF | Tape & Reel | 24 Weeks | 2,500 |
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IRFL9110TRPBF |
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IRFL9110TRPBF | Tape & Reel | 2,500 |
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| IRFL9110TRPBF | Tape & Reel | 2,500 |
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IRFL9110TRPBF | Reel | 2,500 |
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IRFL9110TRPBF | 142 | 1 |
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IRFL9110TRPBF | 3 | 1 |
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IRFL9110TRPBF | 893 |
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IRFL9110TRPBF | 51 |
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IRFL9110TRPBF | 32 Weeks | 2,500 |
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IRFL9110TRPBF | 39 Weeks | 2,500 |
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Vishay Intertechnologies DEL-IRFL9110TRPBF|Vishay DEL-IRFL9110TRPBF |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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DEL-IRFL9110TRPBF | Cut Tape | 5 |
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| DEL-IRFL9110TRPBF | Tape & Reel | 100 |
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Vishay Intertechnologies IRFL9110PBFPOWER MOSFET, P-CH, VDSS -100V, RDS(ON) 1.2OHMS, ID -1.1A, SOT-223,PD 3.1W, VGS+/-20V |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IRFL9110PBF | Bulk | 4,000 |
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IRFL9110PBF | 673 |
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Vishay Siliconix IRFL9110PBFIRFL9110PBF P-CHANNEL MOSFET TRANSISTOR, 1.1 A, 100 V, 3 + TAB-PIN SOT-223 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IRFL9110PBF | Bulk | 4,000 |
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IRFL9110PBF | 120 |
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| IRFL9110PBF | 4 |
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IRFL9110 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
912 12B
Abstract: AN-994 IRFL9110 sot-223 body marking A G Q E
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OCR Scan |
irfl9110-100vot-223h9110+3 | |
S10 diode
Abstract: 91196
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Original |
irfl9110sihfl91102002/95/ecot-223+3 | |
AN-994
Abstract: IRFL9110
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Original |
0864airfl9110-100vot-223+2 | |
91196Contextual Info: IRFL9110, SiHFL9110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 100 RDS(on) (Ω) VGS = - 10 V 1.2 Qg (Max.) (nC) 8.7 Qgs (nC) 2.2 Qgd (nC) 4.1 Configuration Single Surface Mount Available in Tape and Reel Dynamic dV/dt Rating Repetitive Avalanche Rated |
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irfl9110sihfl9110ot-22312-mar-07+1 | |
AN-994
Abstract: IRFL9110
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Original |
0864airfl9110-100vot-223+2 | |
siliconix sot-223 marking
Abstract: IRFL9110 irfl9110pbf SiHFL9110 TH 1287 SiHFL9110-E3 IRFL9110TRPBF 91196
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irfl9110sihfl9110ot-2232002/95/ec+7 | |
IRFL9110Contextual Info: IRFL9110, SiHFL9110 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • -100 RDS(on) () VGS = -10 V Qg (Max.) (nC) 1.2 8.7 Qgs (nC) 2.2 Qgd (nC) 4.1 Configuration Single S DESCRIPTION Third generation power MOSFETs from Vishay provide the |
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irfl9110sihfl9110ot-2232002/95/ec+3 | |
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Contextual Info: IRFL9110_RC, SiHFL9110_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE, |
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irfl9110sihfl9110an60931-may-10 | |
FL014
Abstract: TO-261AA Package TO261AA IRFL014 261AA
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Original |
irfl9110pbfeia-481eia-541eia-418-1+5 | |
IRFL9110TRPBF
Abstract: irfl9110 SiHFL9110-GE3 irfl9110pbf s8210
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irfl9110sihfl91102002/95/ecot-223+6 | |
95320
Abstract: ST 95320 FL014 IRF 100A AN-994
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irfl9110pbf-100vot-223eia-481+7 | |
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Contextual Info: PD - 90864A IRFL9110 HEXFET Power MOSFET l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling D VDSS = -100V RDS on = 1.2Ω G ID = -1.1A Description S Third Generation HEXFETs from International Rectifier |
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0864airfl9110-100vot-223+1 | |
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Contextual Info: PD - 95320 IRFL9110PbF HEXFET Power MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling Lead-Free D VDSS = -100V RDS on = 1.2Ω G ID = -1.1A S Description Third Generation HEXFETs from International Rectifier |
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irfl9110pbf-100vot-22308-mar-07 | |
IRFL9110
Abstract: SiHFL9110 SiHFL9110-E3 irfl9110pbf
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irfl9110sihfl9110ot-22318-jul-08+2 | |
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AN-994
Abstract: IRFL9110
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OCR Scan |
irfl9110ot-223an-994 | |
s8210
Abstract: 91196
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irfl9110sihfl9110ot-2232002/95/ec+5 | |
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Contextual Info: IRFL9110 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V) I(D) Max. (A)1.1 I(DM) Max. (A) Pulsed I(D).69 @Temp (øC)100# IDM Max (@25øC Amb)8.8 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)3.1 Minimum Operating Temp (øC)-55õ |
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irfl9110 | |
IRFL9110
Abstract: s8210 SiHFL9110 SiHFL9110-E3 SiHFL9110-GE3
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irfl9110sihfl9110ot-2232002/95/ec+4 | |
95320
Abstract: st 95320 FL014 91196 AN-994
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irfl9110pbf-100vot-22312-mar-07+5 | |
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Contextual Info: IRFL9110, SiHFL9110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 100 RDS(on) (Ω) VGS = - 10 V 1.2 Qg (Max.) (nC) 8.7 Qgs (nC) 2.2 Qgd (nC) 4.1 Configuration Single S • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount |
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irfl9110sihfl91102002/95/ecot-223+2 | |
IRGKI165F06
Abstract: IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103
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ot-23irlml2402irlml2803irlml5103+9 | |
C495 transistor
Abstract: r3272 MB2100H SN74LVC244A 14pin mc-156 32,768khz m1535d M1535 ah1 c541 c5470 EG-2121CA-125
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vcc12virfl9110ml310c495 transistor+9 | |
schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
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p462-ndp463-ndlng295lfcp2ulng395mftp5u+11 | |
FSQ510 Equivalent
Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
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gp-20fsq510 equivalentbta12 6008bta16 6008+7 | |