TO261AA Search Results

SP19A

Contextual Info: BSP19AT1G NPN Silicon Expitaxial Transistor This family of NPN Silicon Epitaxial transistors is designed for use as a general purpose amplifier and in switching applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications.

ADP3339AKCZ-5-R7

Abstract: ADP3339 ADP3339AKCZ-3-RL7 ADP33xx
Contextual Info: High Accuracy, Ultralow IQ, 1.5 A, anyCAP Low Dropout Regulator ADP3339 FEATURES FUNCTIONAL BLOCK DIAGRAM Q1 IN THERMAL PROTECTION R1 CC DRIVER gm R2 02191-0-001 BANDGAP REF GND Figure 1. APPLICATIONS Notebooks, palmtop computers SCSI terminators Battery-powered systems

314P

Abstract: EIA-541 FL014 IRFL014
Contextual Info: PD - 95316 IRFL1006PbF HEXFET Power MOSFET Surface Mount Advanced Process Technology Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 60V RDS on = 0.22Ω G ID = 1.6A S Description Fifth Generation HEXFETs from International Rectifier

2CJQJ

Abstract: sot223 device Marking 20CJQ100 40HF EIA-541 P460
Contextual Info: Bulletin PD-20480 rev. H 07/06 20CJQ100 SCHOTTKY RECTIFIER 2 Amp IF AV = 2 Amp VR = 100V Description/ Features Major Ratings and Characteristics Characteristics Values Units IF(AV) Rectangular 2.0 A VRRM 100 V IFSM @ tp = 5 s sine 380 A VF 0.67 V waveform

IRFL024N

Contextual Info: PD - 91861A IRFL024N HEXFET Power MOSFET l l l l l l Surface Mount Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.075Ω G ID = 2.8A S Description Fifth Generation HEXFETs from International Rectifier

BF720T1

Abstract: SMD310
Contextual Info: ON Semiconductort BF720T1 NPN Silicon Transistor ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 300 Vdc Collector-Base Voltage VCBO 300 Vdc Collector-Emitter Voltage VCER 300 Vdc Emitter-Base Voltage

20cjq030

Abstract: EIA-541
Contextual Info: Bulletin PD - 20477 rev. C 06/01 20CJQ030 SCHOTTKY RECTIFIER 2 Amp Major Ratings and Characteristics Characteristics IF AV Rectangular waveform Desciption / Features 20CJQ030 Units 2.0 A V RRM 30 V IFSM @ tp = 5 µs sine 400 A VF @ 1.0Apk, TJ = 125°C ( Per Leg )

FL014

Abstract: IRFL110 AN-994
Contextual Info: PD - 90861A IRFL110 HEXFET Power MOSFET l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements D VDSS = 100V RDS on = 0.54Ω G ID = 1.5A S Description

smd fl014

Abstract: FL014 FL014 Example transistor SMD FL014 EIA-541 IRFL014 IRFL4310 838 infra red i*l014 MARKING 93 SOT-223
Contextual Info: PD - 91368B IRFL4310 HEXFET Power MOSFET D l l l l l l Surface Mount Dynamic dv/dt Rating Fast Switching Ease of Paralleling Advanced Process Technology Ultra Low On-Resistance VDSS = 100V RDS on = 0.20W G ID = 1.6A S Description Fifth Generation HEXFETs from International Rectifier

Contextual Info: PD- 95227 IRFL014PbF _Lead-Free Document Number: 91191 04/28/04 www.vishay.com 1 IRFL014PbF Document Number: 91191 www.vishay.com 2 IRFL014PbF Document Number: 91191 www.vishay.com 3 IRFL014PbF Document Number: 91191 www.vishay.com 4 IRFL014PbF Document Number: 91191

Contextual Info: Bulletin PD-21160 07/06 20CJQ100PbF SCHOTTKY RECTIFIER 2 Amp IF AV = 2 Amp VR = 100V Description/ Features Major Ratings and Characteristics Characteristics Values Units IF(AV) Rectangular 2.0 A VRRM 100 V IFSM @ tp = 5 s sine 380 A VF 0.67 V waveform TJ

VISHAY SOT 223 DATE CODE

Abstract: VISHAY SOT LOT CODE
Contextual Info: PD-95318 IRFL214PbF HEXFET Power MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 250V RDS on = 2.0Ω G ID = 0.79A S Description

Contextual Info: Bulletin PD-21157 07/06 20CJQ030PbF 2 Amp SCHOTTKY RECTIFIER IF AV = 2 Amp VR = 30V Description/ Features Major Ratings and Characteristics Characteristics Values Units IF(AV) Rectangular 2.0 A VRRM 30 V IFSM @ tp = 5 s sine 400 A VF 0.42 V waveform TJ

Contextual Info: PD - 90862A IRFL214 HEXFET Power MOSFET l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements D VDSS = 250V RDS on = 2.0Ω G ID = 0.79A S Description

Contextual Info: PD- 95228 IRFL210PbF • Lead-Free Document Number: 91193 04/28/04 www.vishay.com 1 IRFL210PbF Document Number: 91193 www.vishay.com 2 IRFL210PbF Document Number: 91193 www.vishay.com 3 IRFL210PbF Document Number: 91193 www.vishay.com 4 IRFL210PbF Document Number: 91193

BSP16T1

Abstract: SMD310
Contextual Info: ON Semiconductort BSP16T1 SOT-223 Package High Voltage Transistor ON Semiconductor Preferred Device PNP Silicon SOT–223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –300

AIC1190H-18GR8

Abstract: AIC1190H-18GR8TR AIC1190X-XXXXXXX 3.7v 1000mA AIC1190 AIC1190-18PE3TR AIC1190BH-18PM5TR AIC1190-XXXXX AIC1190XX-XXXXXXX SOT223 MARKING L5
Contextual Info: AIC1190 Ultra LDO 1A Linear Regulator With Adjustable & Bypass Pin FEATURES DESCRIPTION Guaranteed 1A Output Current. Fast Response in Line/Load Transient Wide Operating Voltage Ranges: 2.3V to 6.0V. 0.1µA Shutdown Standby Current Low Quiescent Current: < 60µA.

IRLL110PBF

Abstract: IRLL110TRPBF
Contextual Info: IRLL110, SiHLL110 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) () VGS = 5.0 V 0.54 Qg (Max.) (nC) 6.1 Qgs (nC) 2.6 Qgd (nC) 3.3 Configuration Single D Surface Mount Available in Tape and Reel

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP Silicon E pitaxial Transistor PZT2907AT1 M otorola Preferred Device T h is PNP S ilico n E pitaxial tra n s is to r is d e sig ned fo r use in lin e a r and switching applications. The device is housed in the SOT-223 package which is

T2T TRANSISTOR

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Sm all-Signal Darlington Transistor BSP52T1 M otorola Preferred Device This NPN small signal darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The device is

Contextual Info: MOTOROLA Order this document by MMFT2N25E/D SEMICONDUCTOR TECHNICAL DATA Product Preview TMOS E-FET High Energy Power FET M MFT2N25E N-Channel Enhancement-Mode Silicon Gate T his a d va n ce d high v o lta g e T M O S E -F E T is d e s ig n e d to withstand high energy in the avalanche mode and switch efficiently.

Contextual Info: HUF76113T3ST Data Sheet June 2000 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET File Number 4388.3 Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor P-Channel Enhancement Mode Silicon Gate TMOS E-FET SOT-223 for Surface Mount Motorola Preferred Device TMOS MEDIUM POWER FET 1.2 AMP 60 VOLTS RDS on = 0.3 OHM This advanced E -F E T is a TMOS medium power MOSFET

Contextual Info: PD - 97695 AUIRFL024N Features HEXFET Power MOSFET • • • • • • • Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax • Lead-Free, RoHS Compliant