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SIHFL9110 Datasheets (1)

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Vishay Siliconix

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SIHFL9110TR-GE3		Vishay Siliconix	MOSFET P-CH 100V 1.1A SOT223	Original	PDF	363KB

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Vishay Intertechnologies


Vishay Intertechnologies SIHFL9110TR-GE3 MOSFET P-CHANNEL 100V - Tape and Reel (Alt: SIHFL9110TR-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIHFL9110TR-GE3	Tape & Reel		24 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 $0.18	Buy Now
Mouser Electronics	SIHFL9110TR-GE3		74,628			1 $1.03 10 $0.47 100 $0.42 1000 $0.31 10000 $0.22	Buy Now
Newark ()	SIHFL9110TR-GE3	Tape & Reel	1,599		100	1 - 10 - 100 $0.53 1000 $0.51 10000 $0.51	Buy Now
	SIHFL9110TR-GE3	Cut Tape	1,599		5	1 - 10 $0.57 100 $0.53 1000 $0.51 10000 $0.51	Buy Now
	SIHFL9110TR-GE3	Bulk			2,500	1 - 10 - 100 - 1000 - 10000 $0.28	Buy Now
	SIHFL9110TR-GE3	Tape & Reel			2,500	1 - 10 - 100 - 1000 - 10000 $0.32	Buy Now
TTI	SIHFL9110TR-GE3	Reel			2,500	1 - 10 - 100 - 1000 - 10000 $0.26	Buy Now
TME	SIHFL9110TR-GE3				2,500	1 - 10 - 100 - 1000 - 10000 $0.31	Get Quote

EBV Elektronik	SIHFL9110TR-GE3			39 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Intertechnologies SIHFL9110-GE3 MOSFET PCHANNEL 100V (Alt: SIHFL9110-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
EBV Elektronik	SIHFL9110-GE3			21 Weeks	80	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vyrian	SIHFL9110-GE3		844			1 - 10 - 100 - 1000 - 10000 -	Get Quote

SIHFL9110 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
S10 diode Abstract: 91196 Contextual Info: IRFL9110, SiHFL9110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 100 RDS(on) (Ω) VGS = - 10 V 1.2 Qg (Max.) (nC) 8.7 Qgs (nC) 2.2 Qgd (nC) 4.1 Configuration Single S DESCRIPTION SOT-223 D G S G • Halogen-free According to IEC 61249-2-21	Original	irfl9110 sihfl9110 2002/95/ec ot-223 +318-jul-08 s10 diode 91196	PDF
91196 Contextual Info: IRFL9110, SiHFL9110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 100 RDS(on) (Ω) VGS = - 10 V 1.2 Qg (Max.) (nC) 8.7 Qgs (nC) 2.2 Qgd (nC) 4.1 Configuration Single Surface Mount Available in Tape and Reel Dynamic dV/dt Rating Repetitive Avalanche Rated	Original	irfl9110 sihfl9110 ot-223 12-mar-07 +191196	PDF
siliconix sot-223 marking Abstract: IRFL9110 irfl9110pbf SiHFL9110 TH 1287 SiHFL9110-E3 IRFL9110TRPBF 91196 Contextual Info: IRFL9110, SiHFL9110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 100 RDS(on) (Ω) VGS = - 10 V 1.2 Qg (Max.) (nC) 8.7 Qgs (nC) 2.2 Qgd (nC) 4.1 Configuration Single SOT-223 G S G Surface Mount Available in Tape and Reel Dynamic dV/dt Rating	Original	irfl9110 sihfl9110 ot-223 2002/95/ec +718-jul-08 siliconix sot-223 marking irfl9110pbf th 1287 sihfl9110-e3 irfl9110trpbf 91196	PDF
IRFL9110 Contextual Info: IRFL9110, SiHFL9110 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • -100 RDS(on) () VGS = -10 V Qg (Max.) (nC) 1.2 8.7 Qgs (nC) 2.2 Qgd (nC) 4.1 Configuration Single S DESCRIPTION Third generation power MOSFETs from Vishay provide the	Original	irfl9110 sihfl9110 ot-223 2002/95/ec +32011/65/eu js709a 02-oct-12	PDF
Contextual Info: IRFL9110_RC, SiHFL9110_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	irfl9110 sihfl9110 an609 31-may-10	PDF
IRFL9110TRPBF Abstract: irfl9110 SiHFL9110-GE3 irfl9110pbf s8210 Contextual Info: IRFL9110, SiHFL9110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 100 RDS(on) (Ω) VGS = - 10 V 1.2 Qg (Max.) (nC) 8.7 Qgs (nC) 2.2 Qgd (nC) 4.1 Configuration Single S DESCRIPTION SOT-223 D G S G • Halogen-free According to IEC 61249-2-21	Original	irfl9110 sihfl9110 2002/95/ec ot-223 +62011/65/eu 12-mar-12 irfl9110trpbf sihfl9110-ge3 irfl9110pbf s8210	PDF
IRFL9110 Abstract: SiHFL9110 SiHFL9110-E3 irfl9110pbf Contextual Info: IRFL9110, SiHFL9110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 100 RDS(on) (Ω) VGS = - 10 V 1.2 Qg (Max.) (nC) 8.7 Qgs (nC) 2.2 Qgd (nC) 4.1 Configuration Single Surface Mount Available in Tape and Reel Dynamic dV/dt Rating Repetitive Avalanche Rated	Original	irfl9110 sihfl9110 ot-223 18-jul-08 +2sihfl9110-e3 irfl9110pbf	PDF
s8210 Abstract: 91196 Contextual Info: IRFL9110, SiHFL9110 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) () VGS = - 10 V 1.2 Qg (Max.) (nC) 8.7 Qgs (nC) 2.2 Qgd (nC) 4.1 Configuration Single S DESCRIPTION Third generation power MOSFETs from Vishay provide the	Original	irfl9110 sihfl9110 ot-223 2002/95/ec +52011/65/eu js709a 02-oct-12 s8210 91196	PDF
IRFL9110 Abstract: s8210 SiHFL9110 SiHFL9110-E3 SiHFL9110-GE3 Contextual Info: IRFL9110, SiHFL9110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 100 RDS(on) (Ω) VGS = - 10 V 1.2 Qg (Max.) (nC) 8.7 Qgs (nC) 2.2 Qgd (nC) 4.1 Configuration Single S DESCRIPTION SOT-223 D G S G • Halogen-free According to IEC 61249-2-21	Original	irfl9110 sihfl9110 ot-223 2002/95/ec +411-mar-11 s8210 sihfl9110-e3 sihfl9110-ge3	PDF
Contextual Info: IRFL9110, SiHFL9110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 100 RDS(on) (Ω) VGS = - 10 V 1.2 Qg (Max.) (nC) 8.7 Qgs (nC) 2.2 Qgd (nC) 4.1 Configuration Single S • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount	Original	irfl9110 sihfl9110 2002/95/ec ot-223 +22011/65/eu 12-mar-12	PDF